To alleviate catalytic coking on the inner surface of radiant tube for ethylene production in petrochemical plants,SiO2/S coatings were deposited on HP40 alloy specimens using dimethyldisulfide （DMDS） and tetraethox...To alleviate catalytic coking on the inner surface of radiant tube for ethylene production in petrochemical plants,SiO2/S coatings were deposited on HP40 alloy specimens using dimethyldisulfide （DMDS） and tetraethoxysilane （TEOS） by atmospheric pressure chemical vapor deposition （APCVD）. A two-dimension mathematical model was made to predict the growth rate of SiO2/S coating and to study the effects of deposition parameters on the deposition rate. The results show that the predicted deposition rate is in good agreement with the experimental one. The deposition rate mainly depends on the concentrations of precursors in the total gas flow, concentrations of intermediates on the deposition surface, total gas flow rate and deposition temperature. The weight of SiO2/S coating linearly increases with the deposition time. When the gas flow rate is below 0.3 m/s, the rate-limiting step of SiO2/S coating deposition is the diffusions of intermediates.However, the surface reactions of intermediates will be the rate-limiting step after the gas flow rate is above 0.3 m/s. When the deposition temperature is below 780℃, the rate-limiting step of SiO2/S coating deposition mainly depends on the surface reactions of intermediates. When the deposition temperature is above 780℃,the rate-limiting step depends on the diffusions of intermediates. The deposition rate increases with increasing the concentrations of the intermediates. However, when the partial pressures of the intermediates reach 8 Pa,the deposition rate keeps constant.展开更多
Transparent conducting F-doped texture SnO2 films with resistivity as low as 5× 10-4 Ω ·cm,with carrier concentrations between 3.5 × 1020 and 7× 1020 cm-3 and Hall mobilities from 15.7 to 20.1 cm2...Transparent conducting F-doped texture SnO2 films with resistivity as low as 5× 10-4 Ω ·cm,with carrier concentrations between 3.5 × 1020 and 7× 1020 cm-3 and Hall mobilities from 15.7 to 20.1 cm2/(V/s) have been prepared by atmosphere pressure chemical vapour deposition (APCVD). These polycrystalline films possess a variable preferred orientation, the polycrystallite sizes and orientations vary with substrate temperature. The substrate temperature and fluorine flow rate dependence of conductivity, Hall mobility and carrier conentration fOr the resultingfilms have been obtained. The temperature dependence of the mobiity and carrier concentrationhave been measured over a temperature range 16～400 K. A systematically theoretical analysis on scattering mechanisms for the highly conductive SnO2 films has been given. Both theoretical analysis and experimental results indicate that for these degenerate, polycrystalline SnO2 ：F films in the low temperature range (below 100 K), ionized impurity scattering is main scattering mechanism. However, when the temperature is higher than 100 K, the lattice vibration scattering becomes dominant. The grain boundary scattering makes a small contribution to limit the mobility of the films.展开更多
文摘To alleviate catalytic coking on the inner surface of radiant tube for ethylene production in petrochemical plants,SiO2/S coatings were deposited on HP40 alloy specimens using dimethyldisulfide （DMDS） and tetraethoxysilane （TEOS） by atmospheric pressure chemical vapor deposition （APCVD）. A two-dimension mathematical model was made to predict the growth rate of SiO2/S coating and to study the effects of deposition parameters on the deposition rate. The results show that the predicted deposition rate is in good agreement with the experimental one. The deposition rate mainly depends on the concentrations of precursors in the total gas flow, concentrations of intermediates on the deposition surface, total gas flow rate and deposition temperature. The weight of SiO2/S coating linearly increases with the deposition time. When the gas flow rate is below 0.3 m/s, the rate-limiting step of SiO2/S coating deposition is the diffusions of intermediates.However, the surface reactions of intermediates will be the rate-limiting step after the gas flow rate is above 0.3 m/s. When the deposition temperature is below 780℃, the rate-limiting step of SiO2/S coating deposition mainly depends on the surface reactions of intermediates. When the deposition temperature is above 780℃,the rate-limiting step depends on the diffusions of intermediates. The deposition rate increases with increasing the concentrations of the intermediates. However, when the partial pressures of the intermediates reach 8 Pa,the deposition rate keeps constant.
文摘Transparent conducting F-doped texture SnO2 films with resistivity as low as 5× 10-4 Ω ·cm,with carrier concentrations between 3.5 × 1020 and 7× 1020 cm-3 and Hall mobilities from 15.7 to 20.1 cm2/(V/s) have been prepared by atmosphere pressure chemical vapour deposition (APCVD). These polycrystalline films possess a variable preferred orientation, the polycrystallite sizes and orientations vary with substrate temperature. The substrate temperature and fluorine flow rate dependence of conductivity, Hall mobility and carrier conentration fOr the resultingfilms have been obtained. The temperature dependence of the mobiity and carrier concentrationhave been measured over a temperature range 16～400 K. A systematically theoretical analysis on scattering mechanisms for the highly conductive SnO2 films has been given. Both theoretical analysis and experimental results indicate that for these degenerate, polycrystalline SnO2 ：F films in the low temperature range (below 100 K), ionized impurity scattering is main scattering mechanism. However, when the temperature is higher than 100 K, the lattice vibration scattering becomes dominant. The grain boundary scattering makes a small contribution to limit the mobility of the films.
