Point defects in the crystal lattice of SiC,known as color centers,have recently emerged as one of the most promising single-photon emitters for non-classical light sources.However,the search for the best color center...Point defects in the crystal lattice of SiC,known as color centers,have recently emerged as one of the most promising single-photon emitters for non-classical light sources.However,the search for the best color center that satisfies all the requirements of practical applications has only just begun.Many color centers in SiC have been recently discovered but not yet identified.Therefore,it is extremely challenging to understand their optoelectronic properties and evaluate their potential for use in practical single-photon sources.Here,we present a theoretical approach that explains the experiments on single-photon electroluminescence(SPEL)of novel color centers in SiC p-i-n diodes and gives the possibility to engineer highly efficient single-photon emitting diodes based on them.Moreover,we develop a novel method of determining the electron and hole capture cross sections by the color center from experimental measurements of the SPEL rate and second-order coherence.Unlike other methods,the developed approach uses the experimental results at the single defect level that can be easily obtained as soon as a single-color center is identified in the i-type region of the SiC p-i-n diode.展开更多
Pure and F,GeO2-doped silica glass cut from fiber preforms prepared by plasma assisted chemical vapor deposition（PCVD） were investigated by ultraviolet absorption spectroscopy.The ultraviolet absorption characterist...Pure and F,GeO2-doped silica glass cut from fiber preforms prepared by plasma assisted chemical vapor deposition（PCVD） were investigated by ultraviolet absorption spectroscopy.The ultraviolet absorption characteristics of these glasses were also studied after UV laser irradiation and heating treatment.It was found that absorption band near 240 nm assigned to GODC was found both in GeO2-doped and F-GeO2 co-doped silica glass,but absorption intensity of the latter was lower than that of the former.It＇s because F can react with GODC and GeE′ simultaneously and reduce their concentration.After irradiation,UV absorption change of F-GeO2 co-doped silica glass was weaker than that of GeO2-doped silica glass,it thus can be concluded that introduction of F could depress the UV absorption of GeO2-doped silica core effectively.展开更多
基金supported by the RFBR and DFG(project 19-57-12008)the Ministry of Science and Higher Education of the Russian Federation(0714-2020-0002)。
文摘Point defects in the crystal lattice of SiC,known as color centers,have recently emerged as one of the most promising single-photon emitters for non-classical light sources.However,the search for the best color center that satisfies all the requirements of practical applications has only just begun.Many color centers in SiC have been recently discovered but not yet identified.Therefore,it is extremely challenging to understand their optoelectronic properties and evaluate their potential for use in practical single-photon sources.Here,we present a theoretical approach that explains the experiments on single-photon electroluminescence(SPEL)of novel color centers in SiC p-i-n diodes and gives the possibility to engineer highly efficient single-photon emitting diodes based on them.Moreover,we develop a novel method of determining the electron and hole capture cross sections by the color center from experimental measurements of the SPEL rate and second-order coherence.Unlike other methods,the developed approach uses the experimental results at the single defect level that can be easily obtained as soon as a single-color center is identified in the i-type region of the SiC p-i-n diode.
文摘Pure and F,GeO2-doped silica glass cut from fiber preforms prepared by plasma assisted chemical vapor deposition（PCVD） were investigated by ultraviolet absorption spectroscopy.The ultraviolet absorption characteristics of these glasses were also studied after UV laser irradiation and heating treatment.It was found that absorption band near 240 nm assigned to GODC was found both in GeO2-doped and F-GeO2 co-doped silica glass,but absorption intensity of the latter was lower than that of the former.It＇s because F can react with GODC and GeE′ simultaneously and reduce their concentration.After irradiation,UV absorption change of F-GeO2 co-doped silica glass was weaker than that of GeO2-doped silica glass,it thus can be concluded that introduction of F could depress the UV absorption of GeO2-doped silica core effectively.
基金The project was supported by the National Natural Science Foundation of China(20806025,21103047)National 111 Project of China's Higher Education(B08021)~~
