A magnetoresistive random-access memory(MRAM) device was irradiated by ^(60) Co c-rays and an electron beam.The synergistic effect of this on the MRAM was tested with an additional magnetic field during irradiation,fr...A magnetoresistive random-access memory(MRAM) device was irradiated by ^(60) Co c-rays and an electron beam.The synergistic effect of this on the MRAM was tested with an additional magnetic field during irradiation,from which the total ionizing dose(TID) and the synergistic damage mechanism of MRAM were analyzed.In addition,DC,AC,and functional parameters of the memory were tested under irradiation and annealing via a very large-scale integrated circuit test system.The radiation-sensitive parameters were obtained through analyzing the data.Because of the magnetic field applied on the MRAM while testing the synergistic effects,shallow trench isolation leakage and Frenkel–Poole emission due to synergistic effects were smaller than that of TID,and hence radiation damage of the synergistic effects was also lower.展开更多
The effect of the wave accessibility condition on the lower hybrid cm＇rent drive in the experimental advanced superconductor Tokamak （EAST） plasma with H-mode operation is studied. Based on a simplified model, a mo...The effect of the wave accessibility condition on the lower hybrid cm＇rent drive in the experimental advanced superconductor Tokamak （EAST） plasma with H-mode operation is studied. Based on a simplified model, a mode conversion layer of the lower hybrid wave between the fast wave branch and the slow wave branch is proved to exist in the plasma periphery for typical EAST H-mode parameters. Under the framework of the lower hybrid wave simulation code （LSC）, the wave ray trajectory and the associated current drive are calculated numerically. The results show that the wave accessibility condition plays an important role on the lower hybrid current drive in EAST plasma. For wave rays with parallel refractive index n｜｜= 2.1 or n｜｜ = 2.5 launched from the outside midplane, the wave rays may penetrate the core plasma due to the toroida] geometry effect, while numerous reflections of the wave ray trajectories in the plasma periphery occur. However, low current drive efficiency is obtained. Meanwhile, the wave accessibility condition is improved if a higher confined magnetic field is applied. The simulation results show that for plasma parameters under present EAST H-mode operation, a significant lower hybrid wave current drive could be obtained for the wave spectrum with peak value n｜｜ = 2.1 if a toroidal magnetic field BT =2.5 T is applied.展开更多
The impact of ionizing radiation effect on single event upset（SEU） sensitivity of ferroelectric random access memory（FRAM） is studied in this work. The test specimens were firstly subjected to ^60Co γ-ray and the...The impact of ionizing radiation effect on single event upset（SEU） sensitivity of ferroelectric random access memory（FRAM） is studied in this work. The test specimens were firstly subjected to ^60Co γ-ray and then the SEU evaluation was conducted using ^209Bi ions. As a result of TID-induced fatigue-like and imprint-like phenomena of the ferroelectric material, the SEU cross sections of the post-irradiated devices shift substantially. Different trends of SEU cross section with elevated dose were also found, depending on whether the same or complementary test pattern was employed during the TID exposure and the SEU measurement.展开更多
Synergistic effects of the total ionizing dose （TID） on the single event upset （SEU） sensitivity in static random access memories （SRAMs） were studied by using protons. The total dose was cumulated with high flu...Synergistic effects of the total ionizing dose （TID） on the single event upset （SEU） sensitivity in static random access memories （SRAMs） were studied by using protons. The total dose was cumulated with high flux protons during the TID exposure, and the SEU cross section was tested with low flux protons at several cumulated dose steps. Because of the radiation-induced off-state leakage current increase of the CMOS transistors, the noise margin became asymmetric and the memory imprint effect was observed.展开更多
This paper aims to investigate self-access centers'effects on college English learning. Data, collected in the form of questionnaires and interview, were analyzed. Results demonstrate that the self-access center(S...This paper aims to investigate self-access centers'effects on college English learning. Data, collected in the form of questionnaires and interview, were analyzed. Results demonstrate that the self-access center(SAC)does help students to promote learner autonomy, lower their anxiety and encourage their interest in college English learning.展开更多
基金supported by the National Natural Science Foundation of China(No.11705276)the West Light Foundation of the Chinese Academy of Sciences(No.CAS-LWC-2017-2)
文摘A magnetoresistive random-access memory(MRAM) device was irradiated by ^(60) Co c-rays and an electron beam.The synergistic effect of this on the MRAM was tested with an additional magnetic field during irradiation,from which the total ionizing dose(TID) and the synergistic damage mechanism of MRAM were analyzed.In addition,DC,AC,and functional parameters of the memory were tested under irradiation and annealing via a very large-scale integrated circuit test system.The radiation-sensitive parameters were obtained through analyzing the data.Because of the magnetic field applied on the MRAM while testing the synergistic effects,shallow trench isolation leakage and Frenkel–Poole emission due to synergistic effects were smaller than that of TID,and hence radiation damage of the synergistic effects was also lower.
基金Supported by the National Natural Science Foundation of China under Grant No 11347002the National Magnetic Confinement Fusion Science Program of China under Grant No 2013GB111000+2 种基金the Outstanding Youth Fund of Hunan Province Education Department of China under Grant No 12B107the JSPS-NRF-NSFC A3 Foresight Program in the field of Plasma Physics under Grant No 11261140328the National Research Foundation 2012K2A2A6000443
文摘The effect of the wave accessibility condition on the lower hybrid cm＇rent drive in the experimental advanced superconductor Tokamak （EAST） plasma with H-mode operation is studied. Based on a simplified model, a mode conversion layer of the lower hybrid wave between the fast wave branch and the slow wave branch is proved to exist in the plasma periphery for typical EAST H-mode parameters. Under the framework of the lower hybrid wave simulation code （LSC）, the wave ray trajectory and the associated current drive are calculated numerically. The results show that the wave accessibility condition plays an important role on the lower hybrid current drive in EAST plasma. For wave rays with parallel refractive index n｜｜= 2.1 or n｜｜ = 2.5 launched from the outside midplane, the wave rays may penetrate the core plasma due to the toroida] geometry effect, while numerous reflections of the wave ray trajectories in the plasma periphery occur. However, low current drive efficiency is obtained. Meanwhile, the wave accessibility condition is improved if a higher confined magnetic field is applied. The simulation results show that for plasma parameters under present EAST H-mode operation, a significant lower hybrid wave current drive could be obtained for the wave spectrum with peak value n｜｜ = 2.1 if a toroidal magnetic field BT =2.5 T is applied.
文摘The impact of ionizing radiation effect on single event upset（SEU） sensitivity of ferroelectric random access memory（FRAM） is studied in this work. The test specimens were firstly subjected to ^60Co γ-ray and then the SEU evaluation was conducted using ^209Bi ions. As a result of TID-induced fatigue-like and imprint-like phenomena of the ferroelectric material, the SEU cross sections of the post-irradiated devices shift substantially. Different trends of SEU cross section with elevated dose were also found, depending on whether the same or complementary test pattern was employed during the TID exposure and the SEU measurement.
基金supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices,China(Grant No.KFJJ201306)
文摘Synergistic effects of the total ionizing dose （TID） on the single event upset （SEU） sensitivity in static random access memories （SRAMs） were studied by using protons. The total dose was cumulated with high flux protons during the TID exposure, and the SEU cross section was tested with low flux protons at several cumulated dose steps. Because of the radiation-induced off-state leakage current increase of the CMOS transistors, the noise margin became asymmetric and the memory imprint effect was observed.
文摘This paper aims to investigate self-access centers'effects on college English learning. Data, collected in the form of questionnaires and interview, were analyzed. Results demonstrate that the self-access center(SAC)does help students to promote learner autonomy, lower their anxiety and encourage their interest in college English learning.
