The results of a study of the energy spectra of the activation of intrinsic defects of a photosensitive film made from the CdSe<sub>x</sub>S<sub>1-x</sub> solid solution depending on the condit...The results of a study of the energy spectra of the activation of intrinsic defects of a photosensitive film made from the CdSe<sub>x</sub>S<sub>1-x</sub> solid solution depending on the conditions of preparation and heat treatment in various media are presented. It is shown that at x = 0.8 cadmium vacancies create a deep level with an activation energy Е<sub>v</sub> + (0.63 ± 0.02) eV, a complex of chlorine atom with a cadmium vacancy creates a level Е<sub>v</sub> + (0.43 ± 0.02) eV, as well as the fast recombination center Еv + (0.92 ± 0.02) eV. The formation of selenium vacancies due to the introduction of chlorine and its combination with cadmium leads to the appearance of a sticking level Е<sub>c</sub> - (0.19 ± 0.02) eV. CdSe<sub>0.8</sub>S<sub>0.2</sub> films can be used to develop light emitting diodes, photo sensors, IR and visible lasers.展开更多
文摘The results of a study of the energy spectra of the activation of intrinsic defects of a photosensitive film made from the CdSe<sub>x</sub>S<sub>1-x</sub> solid solution depending on the conditions of preparation and heat treatment in various media are presented. It is shown that at x = 0.8 cadmium vacancies create a deep level with an activation energy Е<sub>v</sub> + (0.63 ± 0.02) eV, a complex of chlorine atom with a cadmium vacancy creates a level Е<sub>v</sub> + (0.43 ± 0.02) eV, as well as the fast recombination center Еv + (0.92 ± 0.02) eV. The formation of selenium vacancies due to the introduction of chlorine and its combination with cadmium leads to the appearance of a sticking level Е<sub>c</sub> - (0.19 ± 0.02) eV. CdSe<sub>0.8</sub>S<sub>0.2</sub> films can be used to develop light emitting diodes, photo sensors, IR and visible lasers.
