Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology....Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad（Si） ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose（TID） damage.展开更多
电子轰击有源像素传感器(electron bombarded active pixel sensor,EBAPS)是一种新型的真空-固体混合型微光夜视器件,而调制传递函数(modulation transfer function,MTF)作为EBAPS的性能参数之一,能够反映成像系统对不同频率成分的传递...电子轰击有源像素传感器(electron bombarded active pixel sensor,EBAPS)是一种新型的真空-固体混合型微光夜视器件,而调制传递函数(modulation transfer function,MTF)作为EBAPS的性能参数之一,能够反映成像系统对不同频率成分的传递能力,但目前国内缺少相应的测试手段。因此,为了表征并评价EBAPS的成像质量,基于像增强器狭缝法测试MTF的原理,设计并搭建了一套EBAPS的MTF测试系统。通过驱动EBAPS器件,利用USB接口将采集到的数据传输至上位机进行图像分析,对狭缝图像进行处理获得线扩散函数(line spread function,LSF),经离散傅里叶变换后得到相应的调制传递函数曲线。在狭缝靶标处照度为2×10^(-2) lx时,一定范围内随着电压升高,EBAPS的MTF先升高后降低,且在外加-1 000 V时取得最大值。在光成像模式下,微调狭缝与传感器成像面的相对位置,连续5次测试得到几个重要频率点的MTF值的标准差均低于0.01,稳定性较好。展开更多
A three-transistor active pixel sensor and its double sampling readout circuit implemented by a switch capacitor amplifier are designed. The circuit is embedded in a 64 × 64 pixel array CMOS image sensor and succ...A three-transistor active pixel sensor and its double sampling readout circuit implemented by a switch capacitor amplifier are designed. The circuit is embedded in a 64 × 64 pixel array CMOS image sensor and success-fully taped out with a Chartered 0.35μm process. The pixel pitch is 8μm × 8μm with a fill factor of 57%, the photo-sensitivity is 0.8V/（lux · s） ,and the dynamic range is 50dB. Theoretical analysis and test results indicate that as the process is scaled down, a smaller pixel pitch reduces the sensitivity. A deep junction n-well/p-substrate photodiode with a reasonable fill factor and high sensitivity are more appropriate for submicron processes.展开更多
A pinned photodiode complementary metal–oxide–semiconductor transistor（CMOS） active pixel sensor is exposed to ^60Co to evaluate the performance for space applications. The sample is irradiated with a dose rate of...A pinned photodiode complementary metal–oxide–semiconductor transistor（CMOS） active pixel sensor is exposed to ^60Co to evaluate the performance for space applications. The sample is irradiated with a dose rate of 50 rad（SiO2）/s and a total dose of 100 krad（SiO2）, and the photodiode is kept unbiased. The degradation of dark current, full well capacity,and quantum efficiency induced by the total ionizing dose damage effect are investigated. It is found that the dark current increases mainly from the shallow trench isolation（STI） surrounding the pinned photodiode. Further results suggests that the decreasing of full well capacity due to the increase in the density, is induced by the total ionizing dose（TID） effect, of the trap interface, which also leads to the degradation of quantum efficiency at shorter wavelengths.展开更多
电子轰击型有源像素传感器(electron bombarded active pixel sensor,EBAPS)具有高增益、快响应、低功耗和低成本等优点,研究EBAPS已成为微光夜视成像技术的一个重要发展方向。国内相关机构在电路设计时,对于EBAPS成像电路中所涉及到的...电子轰击型有源像素传感器(electron bombarded active pixel sensor,EBAPS)具有高增益、快响应、低功耗和低成本等优点,研究EBAPS已成为微光夜视成像技术的一个重要发展方向。国内相关机构在电路设计时,对于EBAPS成像电路中所涉及到的芯片主要还是依赖于进口,为加快EBAPS器件成像电路的国产化进程,研制了一套基于EBAPS的全国产成像电路评估板。该电路以国产复旦微FMK50t系列的FPGA芯片为主控芯片,通过设计CMOS(complementary metal oxide semiconductor)驱动模块、数据处理模块、Cameralink显示模块等,分别完成对EBAPS器件的驱动、数字图像处理和实时显示等功能。实验结果表明:在轰击高压为负1 500 V的情况下,该国产EBAPS相机的最低探测照度可达到10-3lx量级。展开更多
A new active digital pixel circuit for CMOS image sensor is designed consisting of four components: a photo-transducer, a preamplifier, a sample & hold (S & H) circuit and an A/D converter with an inverter. It...A new active digital pixel circuit for CMOS image sensor is designed consisting of four components: a photo-transducer, a preamplifier, a sample & hold (S & H) circuit and an A/D converter with an inverter. It is optimized by simulation and adjustment based on 2 μm standard CMOS process. Each circuit of the components is designed with specific parameters. The simulation results of the whole pixel circuits show that the circuit has such advantages as low distortion, low power consumption, and improvement of the output performances by using an inverter.展开更多
The time and efficiency of charge collection are the key factors of monolithic active pixel sensor devices for minimum ionizing particles tracking detection.In this paper,3D models of pixels with different resistivity...The time and efficiency of charge collection are the key factors of monolithic active pixel sensor devices for minimum ionizing particles tracking detection.In this paper,3D models of pixels with different resistivity epitaxial layers(epi-layers) are built and simulated using Synopsys-Sentaurus.The basic characteristics of detectors are evaluated,including electric potential,electric field,and depleted region.Results indicate that the high resistivity (HR) epi-layer is a better choice.Further,simulation results show that the key collection performance is significantly improved owing to a wider and stronger electric field in the N type HR epi-layer.展开更多
随着运动体捕捉对嵌入式系统要求的提高,传统方法对分辨率、采集速度难以兼顾.把运动物捕捉分成对分辨率和速度侧重不同的运动检测和目标提取两个部分,利用有源像素结构APS-CMOS图像传感器可随机接入图像缓存的硬件特性,在数字信号处理(...随着运动体捕捉对嵌入式系统要求的提高,传统方法对分辨率、采集速度难以兼顾.把运动物捕捉分成对分辨率和速度侧重不同的运动检测和目标提取两个部分,利用有源像素结构APS-CMOS图像传感器可随机接入图像缓存的硬件特性,在数字信号处理(digital signal processing,DSP)平台上实现两个阶段特点各异的工作模式切换.这样就使得整个系统的采集速度和目标分辨率同时得到兼顾.而且,此方法使用一般器件就可实现传统方法需要高性能器件才能达到的技术指标.展开更多
A double sampling circuit to eliminating fixed pattern noise(FPN) in CMOS image sensor (CIS) is presented. Double sampling is implemented by column switch capacitor amplifier directly, and offset compensation is added...A double sampling circuit to eliminating fixed pattern noise(FPN) in CMOS image sensor (CIS) is presented. Double sampling is implemented by column switch capacitor amplifier directly, and offset compensation is added to the amplifier to suppress column FPN. The amplifier is embedded in a 64×64 CIS and successfully fabricated with chartered 0.35 μm process. Theory analysis and circuit simulation indicate that FPN can be suppressed from millivolt to microvolt. Test results show that FPN is smaller than one least-significant bit of 8 bit ADC. FPN is reduced to an acceptable level with double sampling technique implemented with switch capacitor amplifier.展开更多
为了解决单一的中值滤波和高斯滤波算法对低照度图像中同时存在的脉冲噪声和泊松噪声抑制效果不佳、边缘细节保护不足的问题,提出一种基于可编程逻辑门阵列(field programmable gate array,FPGA)的开关中值-高斯融合(open and close mix...为了解决单一的中值滤波和高斯滤波算法对低照度图像中同时存在的脉冲噪声和泊松噪声抑制效果不佳、边缘细节保护不足的问题,提出一种基于可编程逻辑门阵列(field programmable gate array,FPGA)的开关中值-高斯融合(open and close mix-median-Gaussian,OCMMG)滤波算法。首先,利用最小四方向差值检测每个像素点的异常程度,根据脉冲噪声判别阈值分配权重,进行第1步滤波处理;然后,利用四方向边缘检测算法提取图像边缘,根据设置的边缘置信度表征值进行第2步滤波处理;最后,用电子轰击有源像素传感器(electron bombarded active pixel sensor,EBAPS)在1×10^(−3 )lx照度条件下采集的图像,基于FPGA对其进行实时图像处理。实验结果表明,FPGA处理结果与软件仿真处理结果相符。该算法相比于中值滤波和高斯滤波算法,峰值信噪比分别提高了3.23%和16.34%,结构相似性分别提高了14.66%和33.86%,边缘保持指数分别提高了0.49%和4.21%,能够有效去除EBAPS图像的混合噪声,并满足实时性要求。展开更多
By using the MOS-based model established in this paper, the physical process of photoelectron generation, transfer,and storage in the four-transistor active pixel sensor(4 T-APS) pixels can be simulated in SPICE envir...By using the MOS-based model established in this paper, the physical process of photoelectron generation, transfer,and storage in the four-transistor active pixel sensor(4 T-APS) pixels can be simulated in SPICE environment. The variable capacitance characteristics of double junctions in pinned photodiodes(PPDs) and the threshold voltage difference formed by channel nonuniform doping in transfer gates(TGs) are considered with this model. The charge transfer process of photogenerated electrons from PPDs to the floating diffusion(FD) is analyzed, and the function of nonuniform doping of TGs in suppressing charge injection back to PPDs is represented with the model. The optical and electrical characteristics of all devices in the pixel are effectively combined with the model. Moreover, the charge transfer efficiency and the voltage variation in PPD can be described with the model. Compared with the hybrid simulation in TCAD and the Verilog-A simulation in SPICE, this model has higher simulation efficiency and accuracy, respectively. The effectiveness of the MOS-based model is experimentally verified in a 3 μm test pixel designed in 0.11 μm CIS process.展开更多
基金Project supported the National Natural Science Foundation of China(Grant No.11675259)the West Light Foundation of the Chinese Academy of Sciences(Grant Nos.XBBS201316,2016-QNXZ-B-2,and 2016-QNXZ-B-8)Young Talent Training Project of Science and Technology,Xinjiang,China(Grant No.qn2015yx035)
文摘Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad（Si） ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose（TID） damage.
文摘A three-transistor active pixel sensor and its double sampling readout circuit implemented by a switch capacitor amplifier are designed. The circuit is embedded in a 64 × 64 pixel array CMOS image sensor and success-fully taped out with a Chartered 0.35μm process. The pixel pitch is 8μm × 8μm with a fill factor of 57%, the photo-sensitivity is 0.8V/（lux · s） ,and the dynamic range is 50dB. Theoretical analysis and test results indicate that as the process is scaled down, a smaller pixel pitch reduces the sensitivity. A deep junction n-well/p-substrate photodiode with a reasonable fill factor and high sensitivity are more appropriate for submicron processes.
基金Project supported by the National Natural Science Foundation of China(Grant No.11675259)the West Light Foundation of the Chinese Academy of Sciences(Grant Nos.2016-QNXZ-B-8 and 2016-QNXZ-B-2)
文摘A pinned photodiode complementary metal–oxide–semiconductor transistor（CMOS） active pixel sensor is exposed to ^60Co to evaluate the performance for space applications. The sample is irradiated with a dose rate of 50 rad（SiO2）/s and a total dose of 100 krad（SiO2）, and the photodiode is kept unbiased. The degradation of dark current, full well capacity,and quantum efficiency induced by the total ionizing dose damage effect are investigated. It is found that the dark current increases mainly from the shallow trench isolation（STI） surrounding the pinned photodiode. Further results suggests that the decreasing of full well capacity due to the increase in the density, is induced by the total ionizing dose（TID） effect, of the trap interface, which also leads to the degradation of quantum efficiency at shorter wavelengths.
文摘电子轰击型有源像素传感器(electron bombarded active pixel sensor,EBAPS)具有高增益、快响应、低功耗和低成本等优点,研究EBAPS已成为微光夜视成像技术的一个重要发展方向。国内相关机构在电路设计时,对于EBAPS成像电路中所涉及到的芯片主要还是依赖于进口,为加快EBAPS器件成像电路的国产化进程,研制了一套基于EBAPS的全国产成像电路评估板。该电路以国产复旦微FMK50t系列的FPGA芯片为主控芯片,通过设计CMOS(complementary metal oxide semiconductor)驱动模块、数据处理模块、Cameralink显示模块等,分别完成对EBAPS器件的驱动、数字图像处理和实时显示等功能。实验结果表明:在轰击高压为负1 500 V的情况下,该国产EBAPS相机的最低探测照度可达到10-3lx量级。
文摘A new active digital pixel circuit for CMOS image sensor is designed consisting of four components: a photo-transducer, a preamplifier, a sample & hold (S & H) circuit and an A/D converter with an inverter. It is optimized by simulation and adjustment based on 2 μm standard CMOS process. Each circuit of the components is designed with specific parameters. The simulation results of the whole pixel circuits show that the circuit has such advantages as low distortion, low power consumption, and improvement of the output performances by using an inverter.
基金supported by the France-China Particle Physics Laboratory(FCPPL)the China Scholarship Council(CSC)grant.
文摘The time and efficiency of charge collection are the key factors of monolithic active pixel sensor devices for minimum ionizing particles tracking detection.In this paper,3D models of pixels with different resistivity epitaxial layers(epi-layers) are built and simulated using Synopsys-Sentaurus.The basic characteristics of detectors are evaluated,including electric potential,electric field,and depleted region.Results indicate that the high resistivity (HR) epi-layer is a better choice.Further,simulation results show that the key collection performance is significantly improved owing to a wider and stronger electric field in the N type HR epi-layer.
文摘随着运动体捕捉对嵌入式系统要求的提高,传统方法对分辨率、采集速度难以兼顾.把运动物捕捉分成对分辨率和速度侧重不同的运动检测和目标提取两个部分,利用有源像素结构APS-CMOS图像传感器可随机接入图像缓存的硬件特性,在数字信号处理(digital signal processing,DSP)平台上实现两个阶段特点各异的工作模式切换.这样就使得整个系统的采集速度和目标分辨率同时得到兼顾.而且,此方法使用一般器件就可实现传统方法需要高性能器件才能达到的技术指标.
基金Supported by National Natural Science Foundation of China (No.60576025).
文摘A double sampling circuit to eliminating fixed pattern noise(FPN) in CMOS image sensor (CIS) is presented. Double sampling is implemented by column switch capacitor amplifier directly, and offset compensation is added to the amplifier to suppress column FPN. The amplifier is embedded in a 64×64 CIS and successfully fabricated with chartered 0.35 μm process. Theory analysis and circuit simulation indicate that FPN can be suppressed from millivolt to microvolt. Test results show that FPN is smaller than one least-significant bit of 8 bit ADC. FPN is reduced to an acceptable level with double sampling technique implemented with switch capacitor amplifier.
文摘为了解决单一的中值滤波和高斯滤波算法对低照度图像中同时存在的脉冲噪声和泊松噪声抑制效果不佳、边缘细节保护不足的问题,提出一种基于可编程逻辑门阵列(field programmable gate array,FPGA)的开关中值-高斯融合(open and close mix-median-Gaussian,OCMMG)滤波算法。首先,利用最小四方向差值检测每个像素点的异常程度,根据脉冲噪声判别阈值分配权重,进行第1步滤波处理;然后,利用四方向边缘检测算法提取图像边缘,根据设置的边缘置信度表征值进行第2步滤波处理;最后,用电子轰击有源像素传感器(electron bombarded active pixel sensor,EBAPS)在1×10^(−3 )lx照度条件下采集的图像,基于FPGA对其进行实时图像处理。实验结果表明,FPGA处理结果与软件仿真处理结果相符。该算法相比于中值滤波和高斯滤波算法,峰值信噪比分别提高了3.23%和16.34%,结构相似性分别提高了14.66%和33.86%,边缘保持指数分别提高了0.49%和4.21%,能够有效去除EBAPS图像的混合噪声,并满足实时性要求。
基金Project supported by the National Natural Science Foundation of China (Grant No. 61874085)the Postdoctoral Research Funding Project of Shaanxi Province,China (Grant No. 2018BSHEDZZ41)。
文摘By using the MOS-based model established in this paper, the physical process of photoelectron generation, transfer,and storage in the four-transistor active pixel sensor(4 T-APS) pixels can be simulated in SPICE environment. The variable capacitance characteristics of double junctions in pinned photodiodes(PPDs) and the threshold voltage difference formed by channel nonuniform doping in transfer gates(TGs) are considered with this model. The charge transfer process of photogenerated electrons from PPDs to the floating diffusion(FD) is analyzed, and the function of nonuniform doping of TGs in suppressing charge injection back to PPDs is represented with the model. The optical and electrical characteristics of all devices in the pixel are effectively combined with the model. Moreover, the charge transfer efficiency and the voltage variation in PPD can be described with the model. Compared with the hybrid simulation in TCAD and the Verilog-A simulation in SPICE, this model has higher simulation efficiency and accuracy, respectively. The effectiveness of the MOS-based model is experimentally verified in a 3 μm test pixel designed in 0.11 μm CIS process.
