Y2002-63306-272 0307259室温表面活性键合方法对 p-Si/N-InP 硅片键合=Bonding of p-Si/N-InP Wafers through surface activatedbonding method at room temperature[会,英]/Howlader,M.M.R.&Watanabe,T.//2001 IEEE Internationa...Y2002-63306-272 0307259室温表面活性键合方法对 p-Si/N-InP 硅片键合=Bonding of p-Si/N-InP Wafers through surface activatedbonding method at room temperature[会,英]/Howlader,M.M.R.&Watanabe,T.//2001 IEEE InternationalConference on Indiurn Phosphide and Related Materi-als.—272~275(E)0307260焊膏印刷中影响质量的因素[刊]/鲜飞//电子工业专用设备.—2002,31(3).—176~179(D)展开更多
文摘Y2002-63306-272 0307259室温表面活性键合方法对 p-Si/N-InP 硅片键合=Bonding of p-Si/N-InP Wafers through surface activatedbonding method at room temperature[会,英]/Howlader,M.M.R.&Watanabe,T.//2001 IEEE InternationalConference on Indiurn Phosphide and Related Materi-als.—272~275(E)0307260焊膏印刷中影响质量的因素[刊]/鲜飞//电子工业专用设备.—2002,31(3).—176~179(D)