It is common sense that a phase interface(or grain boundary)could be used to scatter phonons in thermoelectric(TE)materials,resulting in low thermal conductivity(k).However,a large number of impurity phases are always...It is common sense that a phase interface(or grain boundary)could be used to scatter phonons in thermoelectric(TE)materials,resulting in low thermal conductivity(k).However,a large number of impurity phases are always so harmful to the transport of carriers that poor TE performance is obtained.Here,we demonstrate that numerous superior multiphase(AgCuTe,Ag_(−2)Te,copper telluride(Cu_(2)Te and Cu_(2−x)Te),and nickel telluride(NiTe))interfaces with simultaneous strong phonon scattering and weak electron scattering could be realized in AgCuTe-based TE materials.Owing to the similar chemical bonds in these phases,the depletion region at phase interfaces,which acts as carrier scattering centers,could be ignored.Therefore,the power factor(PF)is obviously enhanced from~609 to~832μW·m^(−1)·K^(−2),and k is simultaneously decreased from~0.52 to~0.43 W·m^(−1)·K^(−1) at 636 K.Finally,a peak figure of merit(zT)of~1.23 at 636 K and an average zT(zTavg)of~1.12 in the temperature range of 523–623 K are achieved,which are one of the best values among the AgCuTe-based TE materials.This study could provide new guidance to enhance the performance by designing superior multiphase interfaces in the TE materials.展开更多
基金This work is supported by the National Natural Science Foundation of China(Grant Nos.52262032,52273285,51961011,52061009,and U21A2054)the National Key R&D Program of China(Grant No.2022YFE0119100)。
文摘It is common sense that a phase interface(or grain boundary)could be used to scatter phonons in thermoelectric(TE)materials,resulting in low thermal conductivity(k).However,a large number of impurity phases are always so harmful to the transport of carriers that poor TE performance is obtained.Here,we demonstrate that numerous superior multiphase(AgCuTe,Ag_(−2)Te,copper telluride(Cu_(2)Te and Cu_(2−x)Te),and nickel telluride(NiTe))interfaces with simultaneous strong phonon scattering and weak electron scattering could be realized in AgCuTe-based TE materials.Owing to the similar chemical bonds in these phases,the depletion region at phase interfaces,which acts as carrier scattering centers,could be ignored.Therefore,the power factor(PF)is obviously enhanced from~609 to~832μW·m^(−1)·K^(−2),and k is simultaneously decreased from~0.52 to~0.43 W·m^(−1)·K^(−1) at 636 K.Finally,a peak figure of merit(zT)of~1.23 at 636 K and an average zT(zTavg)of~1.12 in the temperature range of 523–623 K are achieved,which are one of the best values among the AgCuTe-based TE materials.This study could provide new guidance to enhance the performance by designing superior multiphase interfaces in the TE materials.
