Compositionally undulating step-graded Al（Ga）InxAs （x = 0.05-0.52） buffers with the following InP layer were grown by metal-organic chemical vapor deposition （MOCVD） on （001） GaAs with a 15° miscut. The d...Compositionally undulating step-graded Al（Ga）InxAs （x = 0.05-0.52） buffers with the following InP layer were grown by metal-organic chemical vapor deposition （MOCVD） on （001） GaAs with a 15° miscut. The dislocation dis- tribution and tilts of the epilayers were examined using x-ray rocking curve and （004） reciprocal space maps （RSM） along two orthogonal （110） directions. The results suggested that such reverse-graded layers have different effects on a and 13 dislocations. A higher dislocation density was observed along the [ 110] direction and an epilayer tilt of - 1.43° was attained in the [1-10] direction when a reverse-graded layer strategy was employed. However, for conventional step-graded samples, the dislocation density is normally higher along the [1-10] direction.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.61376065)
文摘Compositionally undulating step-graded Al（Ga）InxAs （x = 0.05-0.52） buffers with the following InP layer were grown by metal-organic chemical vapor deposition （MOCVD） on （001） GaAs with a 15° miscut. The dislocation dis- tribution and tilts of the epilayers were examined using x-ray rocking curve and （004） reciprocal space maps （RSM） along two orthogonal （110） directions. The results suggested that such reverse-graded layers have different effects on a and 13 dislocations. A higher dislocation density was observed along the [ 110] direction and an epilayer tilt of - 1.43° was attained in the [1-10] direction when a reverse-graded layer strategy was employed. However, for conventional step-graded samples, the dislocation density is normally higher along the [1-10] direction.
