Organic memristors with low power consumption,fast write/erasure speed,and complementary metal-oxide-semiconductor(CMOS)compatibility have attracted tremendous attention to mimic biological synapses to realize neuromo...Organic memristors with low power consumption,fast write/erasure speed,and complementary metal-oxide-semiconductor(CMOS)compatibility have attracted tremendous attention to mimic biological synapses to realize neuromorphic computation in recent years.In this paper,organic resistive switching memory(ORSM)based on(Z)-3-(naphthalen-2-yl)-2-(4-nitrophenyl)acrylonitrile(NNA)and polymer poly(N-vinylcarbazole)(PVK)composite film was prepared by spin-coating method.Device performance based on NNA:PVK composite films with different mass fractions of NNA were systematically investigated.The ORSM based on PVK:40%(mass fraction)NNA composite film exhibited non-volatile and bipolar memory properties with a switching ratio(Ion/Ioff)of 24.1,endurance of 68 times and retention time of 104 s,a“SET”voltage(Vset)of−0.55 V and a“RESET”voltage(Vreset)of 2.35 V.The resistive switching was ascribed to the filling and vacant process of the charge traps induced by NNA and the inherent traps in PVK bulk.The holes trapping and de-trapping process occurred when the device was applied with a negative or positive bias,which caused the transforming of the conductive way of charges,that is the resistive behaviors in the macroscopic.This study provides a promising platform for the fabrication of ORSM with high performance.展开更多
基金supported by the Ji Hua Laboratory Science Program,China (No.X190251UZ190)the Foundation of Shanxi Datong University Doctoral Research,the Graduate Education Innovation Project of Shanxi Province,China (No.2022Y761)the Graduate Education Innovation Project of Shanxi Datong University,China (Nos.22CX02,22CX16).
文摘Organic memristors with low power consumption,fast write/erasure speed,and complementary metal-oxide-semiconductor(CMOS)compatibility have attracted tremendous attention to mimic biological synapses to realize neuromorphic computation in recent years.In this paper,organic resistive switching memory(ORSM)based on(Z)-3-(naphthalen-2-yl)-2-(4-nitrophenyl)acrylonitrile(NNA)and polymer poly(N-vinylcarbazole)(PVK)composite film was prepared by spin-coating method.Device performance based on NNA:PVK composite films with different mass fractions of NNA were systematically investigated.The ORSM based on PVK:40%(mass fraction)NNA composite film exhibited non-volatile and bipolar memory properties with a switching ratio(Ion/Ioff)of 24.1,endurance of 68 times and retention time of 104 s,a“SET”voltage(Vset)of−0.55 V and a“RESET”voltage(Vreset)of 2.35 V.The resistive switching was ascribed to the filling and vacant process of the charge traps induced by NNA and the inherent traps in PVK bulk.The holes trapping and de-trapping process occurred when the device was applied with a negative or positive bias,which caused the transforming of the conductive way of charges,that is the resistive behaviors in the macroscopic.This study provides a promising platform for the fabrication of ORSM with high performance.
基金supported by the Scientific Research Foundation of Hunan Provincial Education Department(20C1784)the National Natural Science Foundation of China(61804130,62104267,and 11832016)+4 种基金Hunan Provincial Science and Technology Innovation Major Project(2020GK2014)the National Key Research and Development Plan(2021YFB4000800)the Cultivation Projects of National Major R&D Project(92164108)the Key Projects of National Natural Science Foundation of China(11835008)the Foundation of Innovation Center of Radiation Application(KFZC2020020901).
