Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga_2O_...Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga_2O_3 thin films deposited directly on soft substrates would be amorphous mostly. However, the thickness of the thin film obtained by mechanical exfoliation method is difficult to control and the edge of the film is fragile and easy to be damaged. In this work, we fabricated free-standing Ga_2O_3 thin films using the water-soluble perovskite Sr_3Al_2O_6 as a sacrificial buffer layer. The obtained Ga_2O_3 thin films were polycrystalline. The thickness and dimension of the films were controllable. A flexible Ga_2O_3solar-blind UV photodetector was fabricated by transferring the free-standing Ga_2O_3 film on a flexible polyethylene terephthalate substrate. The results displayed that the photoelectric performances of the flexible Ga_2O_3 photodetector were not sensitive to bending of the device. The free-standing Ga_2O_3 thin films synthesized through the method described here can be transferred to any substrates or integrated with other thin films to fabricate electronic devices.展开更多
VO_2 thin films were grown on silicon substrates using Al_2O_3 thin films as the buffer layers. Compared with direct deposition on silicon, VO_2 thin films deposited on Al_2O_3 buffer layers experience a significant i...VO_2 thin films were grown on silicon substrates using Al_2O_3 thin films as the buffer layers. Compared with direct deposition on silicon, VO_2 thin films deposited on Al_2O_3 buffer layers experience a significant improvement in their microstructures and physical properties. By optimizing the growth conditions, the resistance of VO_2 thin films can change by four orders of magnitude with a reduced thermal hysteresis of 4 °C at the phase transition temperature. The electrically driven phase transformation was measured in Pt/Si/Al_2O_3/VO_2/Au heterostructures. The introduction of a buffer layer reduces the leakage current and Joule heating during electrically driven phase transitions. The C–V measurement result indicates that the phase transformation of VO_2 thin films can be induced by an electrical field.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51572033,51572241,61774019,61704153,and 11404029)the Fund of State Key Laboratory of IPOC(BUPT)+1 种基金the Open Fund of IPOC(BUPT)Beijing Municipal Commission of Science and Technology,China(Grant No.SX2018-04)
文摘Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga_2O_3 thin films deposited directly on soft substrates would be amorphous mostly. However, the thickness of the thin film obtained by mechanical exfoliation method is difficult to control and the edge of the film is fragile and easy to be damaged. In this work, we fabricated free-standing Ga_2O_3 thin films using the water-soluble perovskite Sr_3Al_2O_6 as a sacrificial buffer layer. The obtained Ga_2O_3 thin films were polycrystalline. The thickness and dimension of the films were controllable. A flexible Ga_2O_3solar-blind UV photodetector was fabricated by transferring the free-standing Ga_2O_3 film on a flexible polyethylene terephthalate substrate. The results displayed that the photoelectric performances of the flexible Ga_2O_3 photodetector were not sensitive to bending of the device. The free-standing Ga_2O_3 thin films synthesized through the method described here can be transferred to any substrates or integrated with other thin films to fabricate electronic devices.
基金financially supported by the National Natural Science Foundation of China (Nos. 51401046, 51572042, 61131005, 61021061, and 61271037)International Cooperation Projects (Nos. 2013HH0003 and 2015DFR50870)+3 种基金the 111 Project (No. B13042)the Sichuan Province S&T program (Nos. 2014GZ0003, 2015GZ0091, and 2015GZ0069)Fundamental Research Funds for the Central Universitiesthe start-up fund from the University of Electronic Science and Technology of China
文摘VO_2 thin films were grown on silicon substrates using Al_2O_3 thin films as the buffer layers. Compared with direct deposition on silicon, VO_2 thin films deposited on Al_2O_3 buffer layers experience a significant improvement in their microstructures and physical properties. By optimizing the growth conditions, the resistance of VO_2 thin films can change by four orders of magnitude with a reduced thermal hysteresis of 4 °C at the phase transition temperature. The electrically driven phase transformation was measured in Pt/Si/Al_2O_3/VO_2/Au heterostructures. The introduction of a buffer layer reduces the leakage current and Joule heating during electrically driven phase transitions. The C–V measurement result indicates that the phase transformation of VO_2 thin films can be induced by an electrical field.
