In this work, the effects of GaN channel traps and temperature on the performance of AlGaN/AlN/GaN/AlGaN high electron mobility transistors(HEMTs) on Si(111) substrate, were investigated. 2 D simulations carried out u...In this work, the effects of GaN channel traps and temperature on the performance of AlGaN/AlN/GaN/AlGaN high electron mobility transistors(HEMTs) on Si(111) substrate, were investigated. 2 D simulations carried out using the Silvaco TCAD simulator tool for different drain and gate voltages showed that acceptor-like traps in the channel have a significant influence on the DC and RF characteristics. It was found that deeper acceptors below the conduction band with larger concentration have a more pronounced effect on the transistor performance. Meanwhile, the donor-like traps show no influence. Pulsing the device with different pulse widths and bias conditions, as well as increasing temperature, showed that the traps are more ionized when the pulse is wider or the temperature is higher, which can degrade the drain current and thus the DC characteristics of the transistor. Passivation of the transistor has also a beneficial effect on performance.展开更多
Nano Technology is the branch of technology that deals with dimensions and tolerances in terms of nanometers. In this paper, the electrical characteristics analysis is determined for the Nano-GaN HEMT and Micro-GaN HE...Nano Technology is the branch of technology that deals with dimensions and tolerances in terms of nanometers. In this paper, the electrical characteristics analysis is determined for the Nano-GaN HEMT and Micro-GaN HEMT and also power spectrum density is determined for GaN Nano-HEMT by reducing the gate length Lg in nm range. The GaN Nano HEMT is producing high current comparing to Micro GaN HEMT. Accuracy of the proposed analytical model results is verified with simulation results.展开更多
In this paper, we explore the electrical characteristics of high-electron-mobility transistors(HEMTs) using a TaN/AlGaN/GaN metal insulating semiconductor(MIS) structure. The high-resistance tantalum nitride(TaN) film...In this paper, we explore the electrical characteristics of high-electron-mobility transistors(HEMTs) using a TaN/AlGaN/GaN metal insulating semiconductor(MIS) structure. The high-resistance tantalum nitride(TaN) film prepared by magnetron sputtering as the gate dielectric layer of the device achieved an effective reduction of electronic states at the TaN/AlGaN interface, and reducing the gate leakage current of the MIS HEMT, its performance was enhanced. The HEMT exhibited a low gate leakage current of 2.15 × 10^(-7) mA/mm and a breakdown voltage of 1180 V. Furthermore, the MIS HEMT displayed exceptional operational stability during dynamic tests, with dynamic resistance remaining only 1.39 times even under 400 V stress.展开更多
在考虑 Al Ga N / Ga N异质结中的压电极化和自发极化效应的基础上 ,自洽求解了垂直于沟道方向的薛定谔方程和泊松方程 .通过模拟计算 ,研究了 Al Ga N / Ga N HEMT器件掺杂层 Al的组分、厚度、施主掺杂浓度以及栅偏压对二维电子气特性...在考虑 Al Ga N / Ga N异质结中的压电极化和自发极化效应的基础上 ,自洽求解了垂直于沟道方向的薛定谔方程和泊松方程 .通过模拟计算 ,研究了 Al Ga N / Ga N HEMT器件掺杂层 Al的组分、厚度、施主掺杂浓度以及栅偏压对二维电子气特性的影响 .用准二维物理模型计算了 Al Ga N/ Ga N HEMT器件的输出特性 ,给出了相应的饱和电压和阈值电压 ,并对计算结果和 Al Ga N/ Ga N HEMT器件的结构优化进行了分析 .展开更多
文摘In this work, the effects of GaN channel traps and temperature on the performance of AlGaN/AlN/GaN/AlGaN high electron mobility transistors(HEMTs) on Si(111) substrate, were investigated. 2 D simulations carried out using the Silvaco TCAD simulator tool for different drain and gate voltages showed that acceptor-like traps in the channel have a significant influence on the DC and RF characteristics. It was found that deeper acceptors below the conduction band with larger concentration have a more pronounced effect on the transistor performance. Meanwhile, the donor-like traps show no influence. Pulsing the device with different pulse widths and bias conditions, as well as increasing temperature, showed that the traps are more ionized when the pulse is wider or the temperature is higher, which can degrade the drain current and thus the DC characteristics of the transistor. Passivation of the transistor has also a beneficial effect on performance.
文摘Nano Technology is the branch of technology that deals with dimensions and tolerances in terms of nanometers. In this paper, the electrical characteristics analysis is determined for the Nano-GaN HEMT and Micro-GaN HEMT and also power spectrum density is determined for GaN Nano-HEMT by reducing the gate length Lg in nm range. The GaN Nano HEMT is producing high current comparing to Micro GaN HEMT. Accuracy of the proposed analytical model results is verified with simulation results.
基金supported by the National Natural Science Foundation of China(Grant No.1237310)The Youth Innovation Promotion Association of the Chinese Academy of Sciences(Grant No.2020321)+1 种基金the National Natural Science Foundation of China(Grant No.92163204)The Key Research and Development Program of Jiangsu Province(Grant No.BE2022057-1)。
文摘In this paper, we explore the electrical characteristics of high-electron-mobility transistors(HEMTs) using a TaN/AlGaN/GaN metal insulating semiconductor(MIS) structure. The high-resistance tantalum nitride(TaN) film prepared by magnetron sputtering as the gate dielectric layer of the device achieved an effective reduction of electronic states at the TaN/AlGaN interface, and reducing the gate leakage current of the MIS HEMT, its performance was enhanced. The HEMT exhibited a low gate leakage current of 2.15 × 10^(-7) mA/mm and a breakdown voltage of 1180 V. Furthermore, the MIS HEMT displayed exceptional operational stability during dynamic tests, with dynamic resistance remaining only 1.39 times even under 400 V stress.
文摘在考虑 Al Ga N / Ga N异质结中的压电极化和自发极化效应的基础上 ,自洽求解了垂直于沟道方向的薛定谔方程和泊松方程 .通过模拟计算 ,研究了 Al Ga N / Ga N HEMT器件掺杂层 Al的组分、厚度、施主掺杂浓度以及栅偏压对二维电子气特性的影响 .用准二维物理模型计算了 Al Ga N/ Ga N HEMT器件的输出特性 ,给出了相应的饱和电压和阈值电压 ,并对计算结果和 Al Ga N/ Ga N HEMT器件的结构优化进行了分析 .
