The influences of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with ICPrecessed anode was investigated for the first time. It was found that the turn-on voltage is decreased w...The influences of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with ICPrecessed anode was investigated for the first time. It was found that the turn-on voltage is decreased with the increase of dry-etching power. Furthermore, the leakage currents in the reverse bias region above pinch-off voltage rise as radio frequency（RF） power increases, while below pinch-off voltage, leakage currents tend to be independent of RF power.Based on detailed current–voltage–temperature（I–V –T） measurements, the barrier height of thermionic-field emission（TFE） from GaN is lowered as RF power increases, which results in early conduction. The increase of leakage current can be explained by Frenkel–Poole（FP） emission that higher dry-etching damage in the sidewall leads to the higher tunneling current, while below pinch-off voltage, the leakage is only related to the AlGaN surface, which is independent of RF power.展开更多
The electrical characteristics of Cu and Ni/Al AlGaN/GaN Schottky barrier diodes on Si su bstrates are compared. The onset voltage of Cu Schottky diodes is about 0.4 V less than the Ni/Al contact. For the Cu/Ni Schott...The electrical characteristics of Cu and Ni/Al AlGaN/GaN Schottky barrier diodes on Si su bstrates are compared. The onset voltage of Cu Schottky diodes is about 0.4 V less than the Ni/Al contact. For the Cu/Ni Schottky contact, the leakage current is 4.7 × 10^-7 A/mm at -10 V. After annealing, the leakage current is decreased to 3.7 × 10^-7 A/mm for 400℃ or 4.6 × 10^-8 A/mm for 500℃, respectively. The electrical property is affected by the thickness ratio of Cu to Ni. The Cu/Ni for 80/20 nm shows a low onset voltage, while the Cu/Ni for 20/80 nm shows a low leakage current. Both breakdown voltages are above 720 V.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51177175 and 61274039)the National Basic Research Program of China(Grant Nos.2010CB923200 and 2011CB301903)+4 种基金the Ph.D. Programs Foundation of Ministry of Education of China(Grant No.20110171110021)the International Science and Technology Collaboration Program of China(Grant No.2012DFG52260)the National High Technology Research and Development Program of China(Grant No.2014AA032606)the Science and Technology Plan of Guangdong Province,China(Grant No.2013B010401013)the Opened Fund of the State Key Laboratory on Integrated Optoelectronics,China(Grant No.IOSKL2014KF17)
文摘The influences of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with ICPrecessed anode was investigated for the first time. It was found that the turn-on voltage is decreased with the increase of dry-etching power. Furthermore, the leakage currents in the reverse bias region above pinch-off voltage rise as radio frequency（RF） power increases, while below pinch-off voltage, leakage currents tend to be independent of RF power.Based on detailed current–voltage–temperature（I–V –T） measurements, the barrier height of thermionic-field emission（TFE） from GaN is lowered as RF power increases, which results in early conduction. The increase of leakage current can be explained by Frenkel–Poole（FP） emission that higher dry-etching damage in the sidewall leads to the higher tunneling current, while below pinch-off voltage, the leakage is only related to the AlGaN surface, which is independent of RF power.
基金Supported by the National High Technology Research and Development Program of China under Grant No 2014AA032606 and No 2014AA032602the Beijing Municipal Science and Technology Project under Grant No Z131100005913001
文摘The electrical characteristics of Cu and Ni/Al AlGaN/GaN Schottky barrier diodes on Si su bstrates are compared. The onset voltage of Cu Schottky diodes is about 0.4 V less than the Ni/Al contact. For the Cu/Ni Schottky contact, the leakage current is 4.7 × 10^-7 A/mm at -10 V. After annealing, the leakage current is decreased to 3.7 × 10^-7 A/mm for 400℃ or 4.6 × 10^-8 A/mm for 500℃, respectively. The electrical property is affected by the thickness ratio of Cu to Ni. The Cu/Ni for 80/20 nm shows a low onset voltage, while the Cu/Ni for 20/80 nm shows a low leakage current. Both breakdown voltages are above 720 V.
