Solar-blind ultraviolet photodetectors(SBPDs)have attracted tremendous attention in the environmental,industrial,military,and biological fields.Aluminum gallium nitride(AlGaN),a kind of representative III-nitride semi...Solar-blind ultraviolet photodetectors(SBPDs)have attracted tremendous attention in the environmental,industrial,military,and biological fields.Aluminum gallium nitride(AlGaN),a kind of representative III-nitride semiconductor,has promising prospects in solar-blind photodetection owing to its tunable wide bandgap and industrial feasibility.Considering the high defect density in the AlGaN epilayer directly grown on a sapphire substrate,employing an AlN/sapphire template turns out to be an effective method to achieve a high-quality AlGaN epilayer,thereby enhancing the SBPD performances.In recent years,a variety of remarkable breakthroughs have been achieved in the SBPDs.In this paper,the progress on photovoltaic AlGaN-based SBPDs is reviewed.First,the basic physical properties of AlGaN are introduced.Then,fabrication methods and defect annihilation of the AlN/sapphire template are discussed.Various photovoltaic SBPDs are further summarized,including Schottky barrier,metal-semiconductor-metal,p-n/p-i-n and avalanche photodiodes.Furthermore,surface modification and photoelectrochemical cell techniques are introduced.Benefitting from the development of fabrication techniques and optoelectronic devices,photovoltaic AlGaN photodiodes exhibit a promising prospect in solar-blind ultraviolet photodetection.展开更多
This paper reports the development of solar-blind aluminum gallium nitride (AlGaN) 128×128 UV Focal Plane Arrays (FPAs). The back-illuminated hybrid FPA archi- tecture consists of an 128x128 back-illuminated AlGa...This paper reports the development of solar-blind aluminum gallium nitride (AlGaN) 128×128 UV Focal Plane Arrays (FPAs). The back-illuminated hybrid FPA archi- tecture consists of an 128x128 back-illuminated AlGaN PIN detector array that is bump-mounted to a matching 128x128 silicon CMOS readout integrated circuit (ROIC) chip. The 128×128 p-i-n photodiode arrays with cuton and cutoff wave-lengths of 233 and 258 nm, with a sharp reduction in response to UVB (280―320 nm) light. Several examples of solar-blind images are provided. This solar-blind band FPA has much better application prospect.展开更多
基金supported by the National Natural Science Foundation of China(Nos.52075394 and 51675386)the National Key Research and Development Program of China(No.2021YFB3600200)the National Youth Talent Support Program.
文摘Solar-blind ultraviolet photodetectors(SBPDs)have attracted tremendous attention in the environmental,industrial,military,and biological fields.Aluminum gallium nitride(AlGaN),a kind of representative III-nitride semiconductor,has promising prospects in solar-blind photodetection owing to its tunable wide bandgap and industrial feasibility.Considering the high defect density in the AlGaN epilayer directly grown on a sapphire substrate,employing an AlN/sapphire template turns out to be an effective method to achieve a high-quality AlGaN epilayer,thereby enhancing the SBPD performances.In recent years,a variety of remarkable breakthroughs have been achieved in the SBPDs.In this paper,the progress on photovoltaic AlGaN-based SBPDs is reviewed.First,the basic physical properties of AlGaN are introduced.Then,fabrication methods and defect annihilation of the AlN/sapphire template are discussed.Various photovoltaic SBPDs are further summarized,including Schottky barrier,metal-semiconductor-metal,p-n/p-i-n and avalanche photodiodes.Furthermore,surface modification and photoelectrochemical cell techniques are introduced.Benefitting from the development of fabrication techniques and optoelectronic devices,photovoltaic AlGaN photodiodes exhibit a promising prospect in solar-blind ultraviolet photodetection.
文摘This paper reports the development of solar-blind aluminum gallium nitride (AlGaN) 128×128 UV Focal Plane Arrays (FPAs). The back-illuminated hybrid FPA archi- tecture consists of an 128x128 back-illuminated AlGaN PIN detector array that is bump-mounted to a matching 128x128 silicon CMOS readout integrated circuit (ROIC) chip. The 128×128 p-i-n photodiode arrays with cuton and cutoff wave-lengths of 233 and 258 nm, with a sharp reduction in response to UVB (280―320 nm) light. Several examples of solar-blind images are provided. This solar-blind band FPA has much better application prospect.
