比较了空气桥跨细栅和空气桥跨栅总线两种源连接结构的1 mm AlGaN/GaN HEMTs器件的特性,对两种结构的管芯进行了等效电路参数提取。测试了两种布局方式下的不同源场板结构器件的射频以及功率性能,比较分析表明,空气桥跨细栅的源连接方...比较了空气桥跨细栅和空气桥跨栅总线两种源连接结构的1 mm AlGaN/GaN HEMTs器件的特性,对两种结构的管芯进行了等效电路参数提取。测试了两种布局方式下的不同源场板结构器件的射频以及功率性能,比较分析表明,空气桥跨细栅的源连接方式由于有效地降低了栅漏电容以及栅源电容,比空气桥跨栅总线源连接的器件能取得更好的频率特性以及功率特性。展开更多
A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10 × 120μm transistors. A Wilkinson splitters and combining were used to divide and...A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10 × 120μm transistors. A Wilkinson splitters and combining were used to divide and combine the power. By biasing the amplifier at VDS = 40V, IDS = 0.9A, a maximum CW output power of 41.4dBm with a maximum power added efficiency （PAE） of 32.54% and a power combine efficiency of 69% was achieved at 5.4GHz.展开更多
Fabrication and characteristics of cascade connected AlGaN/GaN HEMTs grown on sapphire substrates are reported.The circuit employs a common source device,which has a gate length of 0.8μm cascode connected to a 1μm c...Fabrication and characteristics of cascade connected AlGaN/GaN HEMTs grown on sapphire substrates are reported.The circuit employs a common source device,which has a gate length of 0.8μm cascode connected to a 1μm common gate device.The second gate bias will not only remarkably affect saturated current and transconductance,but also realize power gain control.Cascode device exhibits a slight lower of f T,a less feedback,a largely greater of maximum available gain and a higher impedance compare to that of common source device.展开更多
Although outstanding microwave power performance of AlGaN/GaN HEMTs has been reported,drain current collapse is still a problem. In this paper,an experiment was carried out to demonstrate one factor causing the collap...Although outstanding microwave power performance of AlGaN/GaN HEMTs has been reported,drain current collapse is still a problem. In this paper,an experiment was carried out to demonstrate one factor causing the collapse. Two AlGaN/GaN samples were annealed under N2-atmosphere with and without carbon incorporation, and the XPS measurement technique was used to determine that the concentration of carbon impurity in the latter sample was far higher than in the former. From the comparison of two Id- Vds characteristics,we conclude that carbon impurity incorporation is responsible for the severe current collapse. The carbon impurity-induced deep traps under negative gate bias stress can capture the channel carriers, which release slowly from these traps under positive bias stress,thus causing the current collapse.展开更多
In this paper, we explore the electrical characteristics of high-electron-mobility transistors(HEMTs) using a TaN/AlGaN/GaN metal insulating semiconductor(MIS) structure. The high-resistance tantalum nitride(TaN) film...In this paper, we explore the electrical characteristics of high-electron-mobility transistors(HEMTs) using a TaN/AlGaN/GaN metal insulating semiconductor(MIS) structure. The high-resistance tantalum nitride(TaN) film prepared by magnetron sputtering as the gate dielectric layer of the device achieved an effective reduction of electronic states at the TaN/AlGaN interface, and reducing the gate leakage current of the MIS HEMT, its performance was enhanced. The HEMT exhibited a low gate leakage current of 2.15 × 10^(-7) mA/mm and a breakdown voltage of 1180 V. Furthermore, the MIS HEMT displayed exceptional operational stability during dynamic tests, with dynamic resistance remaining only 1.39 times even under 400 V stress.展开更多
对 Al Ga N/Ga N HEMT器件采用离子注入技术注入氦离子进行隔离 ,应用该技术制造出的器件在室温下具有很好的特性 .器件的阈值电压在 - 3V左右时 ,源漏间电流为几十 n A.肖特基势垒的反向漏电流在 - 1 0 V下约为几百 n A.与采用干法刻...对 Al Ga N/Ga N HEMT器件采用离子注入技术注入氦离子进行隔离 ,应用该技术制造出的器件在室温下具有很好的特性 .器件的阈值电压在 - 3V左右时 ,源漏间电流为几十 n A.肖特基势垒的反向漏电流在 - 1 0 V下约为几百 n A.与采用干法刻蚀技术进行隔离的器件相比 ,采用离子注入技术不但可以获得全平面化的 HEMTs器件而且还有效地抑制了场区漏电 .研究还表明氦离子注入的温度稳定性大于 70 0℃ .展开更多
文摘比较了空气桥跨细栅和空气桥跨栅总线两种源连接结构的1 mm AlGaN/GaN HEMTs器件的特性,对两种结构的管芯进行了等效电路参数提取。测试了两种布局方式下的不同源场板结构器件的射频以及功率性能,比较分析表明,空气桥跨细栅的源连接方式由于有效地降低了栅漏电容以及栅源电容,比空气桥跨栅总线源连接的器件能取得更好的频率特性以及功率特性。
文摘A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10 × 120μm transistors. A Wilkinson splitters and combining were used to divide and combine the power. By biasing the amplifier at VDS = 40V, IDS = 0.9A, a maximum CW output power of 41.4dBm with a maximum power added efficiency （PAE） of 32.54% and a power combine efficiency of 69% was achieved at 5.4GHz.
文摘Fabrication and characteristics of cascade connected AlGaN/GaN HEMTs grown on sapphire substrates are reported.The circuit employs a common source device,which has a gate length of 0.8μm cascode connected to a 1μm common gate device.The second gate bias will not only remarkably affect saturated current and transconductance,but also realize power gain control.Cascode device exhibits a slight lower of f T,a less feedback,a largely greater of maximum available gain and a higher impedance compare to that of common source device.
文摘Although outstanding microwave power performance of AlGaN/GaN HEMTs has been reported,drain current collapse is still a problem. In this paper,an experiment was carried out to demonstrate one factor causing the collapse. Two AlGaN/GaN samples were annealed under N2-atmosphere with and without carbon incorporation, and the XPS measurement technique was used to determine that the concentration of carbon impurity in the latter sample was far higher than in the former. From the comparison of two Id- Vds characteristics,we conclude that carbon impurity incorporation is responsible for the severe current collapse. The carbon impurity-induced deep traps under negative gate bias stress can capture the channel carriers, which release slowly from these traps under positive bias stress,thus causing the current collapse.
文摘研究了蓝宝石衬底 Al Ga N/Ga N共栅共源器件的特性。该器件包括栅长 0 .8μm共源器件与栅长 1 μm的共栅器件。研究表明 ,共栅共源器件的第二栅压对的器件饱和电流与跨导有明显的调制作用 ,容易实现功率增益控制。与共源器件相比 ,共栅共源器件在微波特性上 f T 大约 9GHz,比共源器件稍小 ,但是具有较低的反馈 ,显著增加的功率资用增益及较高的端口阻抗 ,与共源器件相比 ,稳定性更好 ,可以避免振荡的产生 ,结合 Ga N的高功率特性 Ga
基金supported by the National Natural Science Foundation of China(Grant No.1237310)The Youth Innovation Promotion Association of the Chinese Academy of Sciences(Grant No.2020321)+1 种基金the National Natural Science Foundation of China(Grant No.92163204)The Key Research and Development Program of Jiangsu Province(Grant No.BE2022057-1)。
文摘In this paper, we explore the electrical characteristics of high-electron-mobility transistors(HEMTs) using a TaN/AlGaN/GaN metal insulating semiconductor(MIS) structure. The high-resistance tantalum nitride(TaN) film prepared by magnetron sputtering as the gate dielectric layer of the device achieved an effective reduction of electronic states at the TaN/AlGaN interface, and reducing the gate leakage current of the MIS HEMT, its performance was enhanced. The HEMT exhibited a low gate leakage current of 2.15 × 10^(-7) mA/mm and a breakdown voltage of 1180 V. Furthermore, the MIS HEMT displayed exceptional operational stability during dynamic tests, with dynamic resistance remaining only 1.39 times even under 400 V stress.
文摘对 Al Ga N/Ga N HEMT器件采用离子注入技术注入氦离子进行隔离 ,应用该技术制造出的器件在室温下具有很好的特性 .器件的阈值电压在 - 3V左右时 ,源漏间电流为几十 n A.肖特基势垒的反向漏电流在 - 1 0 V下约为几百 n A.与采用干法刻蚀技术进行隔离的器件相比 ,采用离子注入技术不但可以获得全平面化的 HEMTs器件而且还有效地抑制了场区漏电 .研究还表明氦离子注入的温度稳定性大于 70 0℃ .
基金Project Supported bythe State Key Development Programfor Basic Research of China(2002CB311903)The Key Innovation Programof Chinese Academy of Sciences(KGCX2-SW-107)
