This paper reports a new method of fabricating AlGaInP-based nanorod light emitting diodes（LEDs） by using self-assembly metal layer nanomasks and inductively coupled plasma.Light-power measurements indicate that the...This paper reports a new method of fabricating AlGaInP-based nanorod light emitting diodes（LEDs） by using self-assembly metal layer nanomasks and inductively coupled plasma.Light-power measurements indicate that the scattering of photons considerably enhances the probability of escaping from the nanorod LEDs.The light-intensity of the nanorod LED is increased by 34%for a thin GaP window layer,and by 17%for an 8μm GaP window layer.The light-power of the nanorod LED is increased by 25%and 13%,respectively.展开更多
基金Project supported by the National High Technology Research and Development Program of China(No.SQ2008AA03Z402).
文摘This paper reports a new method of fabricating AlGaInP-based nanorod light emitting diodes（LEDs） by using self-assembly metal layer nanomasks and inductively coupled plasma.Light-power measurements indicate that the scattering of photons considerably enhances the probability of escaping from the nanorod LEDs.The light-intensity of the nanorod LED is increased by 34%for a thin GaP window layer,and by 17%for an 8μm GaP window layer.The light-power of the nanorod LED is increased by 25%and 13%,respectively.
