This paper reports that pure hexagonal aluminium nitride microtubes and nanowires growing along the [0001] direction have been successfully synthesized by directly reacting AlCl3 with NaN3 at low temperature （450℃）...This paper reports that pure hexagonal aluminium nitride microtubes and nanowires growing along the [0001] direction have been successfully synthesized by directly reacting AlCl3 with NaN3 at low temperature （450℃） under condition of non-solvent system. The grey-white powder of reacting product was characterized by high-resolution transmission electron microscope （HRTEM）, which shows that the powder is long straight-wire morphology with outer diameter from 40nm to 300 nm and length up to several micrometres. The results of both electron diffraction （ED） and x-ray diffraction （XRD） indicate that the AlN microtubes have a pure hexagonal monocrystal tubular structure with the combination of the curled AlN nanobelts. Room-temperature photoluminescence spectrum of the synthesized sample showed an emission peak, which is closely related to the small size of the microtubes.展开更多
The stability and electronic structures of AIN nanowires with and without N-vacancy are investigated using firstprinciples calculations. We find that there is an inverse correlation between formation energy and diamet...The stability and electronic structures of AIN nanowires with and without N-vacancy are investigated using firstprinciples calculations. We find that there is an inverse correlation between formation energy and diameter in ideal AlN nanowires. After calculating the formation energies of N-vacancy at different sites in AlN nanowires with different diameters, we find that the N-vacancy prefers to stay at the surface of the nanowires and it is easier to fabricate them under Al-rich conditions. Through studying the electronic properties of AlN nanowires with N-vacancies, we further find that there are two isolated bands in the deep part of the band gap, one of them is fully occupied and the other is half occupied. The charge density indicates that the half-fully occupied band arises from the Al at the surface, and this atom becomes an active centre.展开更多
We develop a new electrospinning method to prepare ultra-long ordered La1-xSrxMnO3 （LSMO） nanowires. The length is up to several centimeters and is only limited by the size of the collector. The well-ordered straigh...We develop a new electrospinning method to prepare ultra-long ordered La1-xSrxMnO3 （LSMO） nanowires. The length is up to several centimeters and is only limited by the size of the collector. The well-ordered straight-line structure ensures the transport measurement, which is impossible to be carried out for the random nanowires fabricated by the traditional electrospinning method. Magnetic and transport measurements indicate that the physical properties of the LSMO nanowires depend sensitively on the doping concentration. At the optimum doping, the LSMO wires are ferromagnetic at room temperature with a metal-insulator transition temperature close to room temperature. Magnetic force microscopy studies are also performed to provide a microscopic view of these ultra-long nanowires.展开更多
GaN and AlN nanowires（NWs） have attracted great interests for the fabrication of novel nano-sized devices. In this paper, the nucleation processes of GaN and AlN NWs grown on Si substrates by molecular beam epitaxy...GaN and AlN nanowires（NWs） have attracted great interests for the fabrication of novel nano-sized devices. In this paper, the nucleation processes of GaN and AlN NWs grown on Si substrates by molecular beam epitaxy（MBE）are investigated. It is found that GaN NWs nucleated on in-situ formed Si3N4 fully release the stress upon the interface between GaN NW and amorphous Si3N4 layer, while AlN NWs nucleated by aluminization process gradually release the stress during growth. Depending on the strain status as well as the migration ability of Ⅲ group adatoms, the different growth kinetics of GaN and AlN NWs result in different NW morphologies, i.e., GaN NWs with uniform radii and AlN NWs with tapered bases.展开更多
Transparent electrodes made of silver nanowires （AgNWs） exhibit higher flexibility when compared to those made of tin doped indium oxide （ITO） and are expected to be applied in plastic electronics. However, these ...Transparent electrodes made of silver nanowires （AgNWs） exhibit higher flexibility when compared to those made of tin doped indium oxide （ITO） and are expected to be applied in plastic electronics. However, these transparent electrodes composed of AgNWs show high haze because the wires cause strong light scattering in the visible range. Reduction of the wire diameter has been proposed as a way to weaken light scattering, although there have seldom been any studies focusing on the haze because of the difficulty involved in controlling the wire diameter. In this report, we show that the haze can be easily reduced by increasing the length of AgNWs with a large diameter. Ultra-long （u-long） AgNWs with lengths in the range of 20-100 μm and a maximum length of 230 μm have been successfully synthesized by adjusting the reaction temperature and the stirring speed of a one-step polyol process. Compared to typical AgNWs （with diameter and length of 70 nm and 10 μm, respectively） and ITO, a transparent electrode consisting of u-long AgNWs 91 nm in diameter demonstrated a low haze of 3.4%-1.6% and a low sheet resistance of 24-109 Ω/sq. at a transmittance of 94%-97%. Even when fabricated at room temperature without any post-treatment, the electrodes composed of u-long AgNWs achieved a sheet resistance of 19 Ω/sq, at a transmittance of 80%, which is six orders of magnitude lower than that of typical AgNWs.展开更多
基金Project supported by the National Natural Science Foundation of China （Grant No 10474078） and the Science Foundation of the Education 0ffice of Shanxi Province, China.
文摘This paper reports that pure hexagonal aluminium nitride microtubes and nanowires growing along the [0001] direction have been successfully synthesized by directly reacting AlCl3 with NaN3 at low temperature （450℃） under condition of non-solvent system. The grey-white powder of reacting product was characterized by high-resolution transmission electron microscope （HRTEM）, which shows that the powder is long straight-wire morphology with outer diameter from 40nm to 300 nm and length up to several micrometres. The results of both electron diffraction （ED） and x-ray diffraction （XRD） indicate that the AlN microtubes have a pure hexagonal monocrystal tubular structure with the combination of the curled AlN nanobelts. Room-temperature photoluminescence spectrum of the synthesized sample showed an emission peak, which is closely related to the small size of the microtubes.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 11074200 and 61176079)the Natural Science Fund of Shaanxi Province,China (Grant No. 2009JM1005)
文摘The stability and electronic structures of AIN nanowires with and without N-vacancy are investigated using firstprinciples calculations. We find that there is an inverse correlation between formation energy and diameter in ideal AlN nanowires. After calculating the formation energies of N-vacancy at different sites in AlN nanowires with different diameters, we find that the N-vacancy prefers to stay at the surface of the nanowires and it is easier to fabricate them under Al-rich conditions. Through studying the electronic properties of AlN nanowires with N-vacancies, we further find that there are two isolated bands in the deep part of the band gap, one of them is fully occupied and the other is half occupied. The charge density indicates that the half-fully occupied band arises from the Al at the surface, and this atom becomes an active centre.
基金Supported by the National Basic Research Program of China under Grant Nos 2016YFA0300700,2013CB932901 and2014CB921104the National Natural Science Foundation of China under Grant Nos 11274071 and 11504053the Shanghai Municipal Natural Science Foundation under Grant No 11ZR140260
文摘We develop a new electrospinning method to prepare ultra-long ordered La1-xSrxMnO3 （LSMO） nanowires. The length is up to several centimeters and is only limited by the size of the collector. The well-ordered straight-line structure ensures the transport measurement, which is impossible to be carried out for the random nanowires fabricated by the traditional electrospinning method. Magnetic and transport measurements indicate that the physical properties of the LSMO nanowires depend sensitively on the doping concentration. At the optimum doping, the LSMO wires are ferromagnetic at room temperature with a metal-insulator transition temperature close to room temperature. Magnetic force microscopy studies are also performed to provide a microscopic view of these ultra-long nanowires.
基金supported by the National Basic Research Program of China(Grant No.2013CB632804)the National Natural Science Foundation of China(Grant Nos.61176015,61176059,61210014,61321004,and 61307024)the High Technology Research and Development Program of China(Grant No.2012AA050601)
文摘GaN and AlN nanowires（NWs） have attracted great interests for the fabrication of novel nano-sized devices. In this paper, the nucleation processes of GaN and AlN NWs grown on Si substrates by molecular beam epitaxy（MBE）are investigated. It is found that GaN NWs nucleated on in-situ formed Si3N4 fully release the stress upon the interface between GaN NW and amorphous Si3N4 layer, while AlN NWs nucleated by aluminization process gradually release the stress during growth. Depending on the strain status as well as the migration ability of Ⅲ group adatoms, the different growth kinetics of GaN and AlN NWs result in different NW morphologies, i.e., GaN NWs with uniform radii and AlN NWs with tapered bases.
文摘Transparent electrodes made of silver nanowires （AgNWs） exhibit higher flexibility when compared to those made of tin doped indium oxide （ITO） and are expected to be applied in plastic electronics. However, these transparent electrodes composed of AgNWs show high haze because the wires cause strong light scattering in the visible range. Reduction of the wire diameter has been proposed as a way to weaken light scattering, although there have seldom been any studies focusing on the haze because of the difficulty involved in controlling the wire diameter. In this report, we show that the haze can be easily reduced by increasing the length of AgNWs with a large diameter. Ultra-long （u-long） AgNWs with lengths in the range of 20-100 μm and a maximum length of 230 μm have been successfully synthesized by adjusting the reaction temperature and the stirring speed of a one-step polyol process. Compared to typical AgNWs （with diameter and length of 70 nm and 10 μm, respectively） and ITO, a transparent electrode consisting of u-long AgNWs 91 nm in diameter demonstrated a low haze of 3.4%-1.6% and a low sheet resistance of 24-109 Ω/sq. at a transmittance of 94%-97%. Even when fabricated at room temperature without any post-treatment, the electrodes composed of u-long AgNWs achieved a sheet resistance of 19 Ω/sq, at a transmittance of 80%, which is six orders of magnitude lower than that of typical AgNWs.
