Polymer-assisted deposition technique has been used to deposit Al2O3 and N-doped Al2O3 （AION） thin films on Si（100） substrates. The chemical compositions, crystallinity, and thermal conductivity of the as-grown fi...Polymer-assisted deposition technique has been used to deposit Al2O3 and N-doped Al2O3 （AION） thin films on Si（100） substrates. The chemical compositions, crystallinity, and thermal conductivity of the as-grown films have been characterized by X-ray photoelectron spectroscopy （XPS）, X-ray diffraction （XRD）, and 3-omega method, respectively. Amorphous and polycrystalline Al2O3 and AlON thin films have been formed at 700 ℃ and 1000 ℃. The thermal conductivity results indicated that the effect of nitrogen doping on the thermal conductivity is determined by the competition of the increase of Al-N bonding and the suppression of crystallinity. A 67% enhancement in thermal conductivity has been achieved for the samples grown at 700 ℃, demonstrating that the nitrogen doping is an effective way to improve the thermal performance of polymer-assisted-deposited Al2O3 thin films at a relatively low growth temperature.展开更多
Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga_2O_...Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga_2O_3 thin films deposited directly on soft substrates would be amorphous mostly. However, the thickness of the thin film obtained by mechanical exfoliation method is difficult to control and the edge of the film is fragile and easy to be damaged. In this work, we fabricated free-standing Ga_2O_3 thin films using the water-soluble perovskite Sr_3Al_2O_6 as a sacrificial buffer layer. The obtained Ga_2O_3 thin films were polycrystalline. The thickness and dimension of the films were controllable. A flexible Ga_2O_3solar-blind UV photodetector was fabricated by transferring the free-standing Ga_2O_3 film on a flexible polyethylene terephthalate substrate. The results displayed that the photoelectric performances of the flexible Ga_2O_3 photodetector were not sensitive to bending of the device. The free-standing Ga_2O_3 thin films synthesized through the method described here can be transferred to any substrates or integrated with other thin films to fabricate electronic devices.展开更多
VO_2 thin films were grown on silicon substrates using Al_2O_3 thin films as the buffer layers. Compared with direct deposition on silicon, VO_2 thin films deposited on Al_2O_3 buffer layers experience a significant i...VO_2 thin films were grown on silicon substrates using Al_2O_3 thin films as the buffer layers. Compared with direct deposition on silicon, VO_2 thin films deposited on Al_2O_3 buffer layers experience a significant improvement in their microstructures and physical properties. By optimizing the growth conditions, the resistance of VO_2 thin films can change by four orders of magnitude with a reduced thermal hysteresis of 4 °C at the phase transition temperature. The electrically driven phase transformation was measured in Pt/Si/Al_2O_3/VO_2/Au heterostructures. The introduction of a buffer layer reduces the leakage current and Joule heating during electrically driven phase transitions. The C–V measurement result indicates that the phase transformation of VO_2 thin films can be induced by an electrical field.展开更多
Without extra heating, Al2O3 thin films were deposited on a hydrogen-terminated Si substrate etched in hydrofluoric acid by using a self-built electron cyclotron resonance （ECR） plasma-assisted atomic layer depositi...Without extra heating, Al2O3 thin films were deposited on a hydrogen-terminated Si substrate etched in hydrofluoric acid by using a self-built electron cyclotron resonance （ECR） plasma-assisted atomic layer deposition （ALD） device with Al（CH3）3 （trimethylaluminum; TMA） and O2 used as precursor and oxidant, respectively. During the deposition process, Ar was in- troduced as a carrier and purging gas. The chemical composition and microstructure of the as-deposited Al2O3 films were characterized by using X-ray diffraction （XRD）, an X-ray photo- electric spectroscope （XPS）, a scanning electron microscope （SEM）, an atomic force microscope （AFM） and a high-resolution transmission electron microscope （HRTEM）. It achieved a growth rate of 0.24 nm/cycle, which is much higher than that deposited by thermal ALD. It was found that the smooth surface thin film was amorphous alumina, and an interfacial layer formed with a thickness of ca. 2 nm was observed between theAl2O3 film and substrate Si by HRTEM. We conclude that ECR plasma-assisted ALD can growAl2O3 films with an excellent quality at a high growth rate at ambient temperature.展开更多
Microwave characteristics of MgB2/Al2O3 superconducting thin films were investigated by coplanar resonator technique. The thin films studied have different grain sizes resulting from different growth techniques. The ...Microwave characteristics of MgB2/Al2O3 superconducting thin films were investigated by coplanar resonator technique. The thin films studied have different grain sizes resulting from different growth techniques. The experimental results can be described very well by a grain-size model which combines coplanar resonator theory and Josephson junction network model. It was found that the penetration depth and surface resistance of thin films with smaller grain sizes are larger than those of thin films with larger grain sizes.展开更多
The stabilization of γ-aluminium oxyni-tride spinel(γ-AlON) has been investigated by addition of MgO,MgAl2O4,etc.,in reaction process.The results indicated that there are wider solid solution areas near ,Al2O3-rich ...The stabilization of γ-aluminium oxyni-tride spinel(γ-AlON) has been investigated by addition of MgO,MgAl2O4,etc.,in reaction process.The results indicated that there are wider solid solution areas near ,Al2O3-rich side in AlN-Al2O3-MgO ternary systems,The content of stabilized AlON phase in samples is related to heating temperatures,additives,etc.The lattice parameters of their AlON phases could be well describedby the equation: a0=0.7900+0.0375[MgO]+0.015[AlN](nm)展开更多
The distributions of traps and electron density in the interfaces between polyimide （PI） matrix and Al2O3 nanoparticles are researched using the isothermal decay current and the small-angle x-ray scattering （SAXS）...The distributions of traps and electron density in the interfaces between polyimide （PI） matrix and Al2O3 nanoparticles are researched using the isothermal decay current and the small-angle x-ray scattering （SAXS） tests. According to the electron density distribution for quasi two-phase mixture doped by spherical nanoparticles, the electron densities in the interfaces of PI/Al2O3 nanocomposite films are evaluated. The trap level density and carrier mobility in the interface are studied. The experimental results show that the distribution and the change rate of the electron density in the three layers of interface are different, indicating different trap distributions in the interface layers. There is a maximum trap level density in the second layer, where the maximum trap level density for the nanocomposite film doped by 25 wt% is 1.054 × 10^22 eV·m^-3 at 1.324eV, resulting in the carrier mobility reducing. In addition, both the thickness and the electron density of the nanocomposite film interface increase with the addition of the doped Al2O3 contents. Through the study on the trap level distribution in the interface, it is possible to further analyze the insulation mechanism and to improve the performance of nano-dielectric materials.展开更多
Atomic layer deposition （ALD） technique is used in the preparation of organic/inorganic layers, which requires uniform surfaces with their thickness down to several nanometers. For film with such thickness, the grow...Atomic layer deposition （ALD） technique is used in the preparation of organic/inorganic layers, which requires uniform surfaces with their thickness down to several nanometers. For film with such thickness, the growth mode defined as the arrangement of clusters on the surface during the growth is of significance. In this work, Al2O3 thin film was deposited on various interfacial species of pre-treated polyethylene terephthalate （PET, 12 μm） by plasma assisted atomic layer deposition （PA-ALD）, where trimethyl aluminium was used as the Al precursor and O2 as the oxygen source. The interracial species, -NH3, -OH, and -COOH as well as SiCHO （derived from monomer of HMDSO plasma）, were grafted previously by plasma and chemical treatments. The growth mode of PA-ALD Al2O3 was then investigated in detail by combining results from in-situ diagnosis of spectroscopic ellipsometry （SE） and ex-situ characterization of as-deposited layers from the morphologies scanned by atomic force microscopy （AFM）. In addition, the oxygen transmission rates （OTR） of the original and treated plastic films were measured. The possible reasons for the dependence of the OTR values on the surface species were explored.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.60976061 and 11028409)
文摘Polymer-assisted deposition technique has been used to deposit Al2O3 and N-doped Al2O3 （AION） thin films on Si（100） substrates. The chemical compositions, crystallinity, and thermal conductivity of the as-grown films have been characterized by X-ray photoelectron spectroscopy （XPS）, X-ray diffraction （XRD）, and 3-omega method, respectively. Amorphous and polycrystalline Al2O3 and AlON thin films have been formed at 700 ℃ and 1000 ℃. The thermal conductivity results indicated that the effect of nitrogen doping on the thermal conductivity is determined by the competition of the increase of Al-N bonding and the suppression of crystallinity. A 67% enhancement in thermal conductivity has been achieved for the samples grown at 700 ℃, demonstrating that the nitrogen doping is an effective way to improve the thermal performance of polymer-assisted-deposited Al2O3 thin films at a relatively low growth temperature.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51572033,51572241,61774019,61704153,and 11404029)the Fund of State Key Laboratory of IPOC(BUPT)+1 种基金the Open Fund of IPOC(BUPT)Beijing Municipal Commission of Science and Technology,China(Grant No.SX2018-04)
文摘Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga_2O_3 thin films deposited directly on soft substrates would be amorphous mostly. However, the thickness of the thin film obtained by mechanical exfoliation method is difficult to control and the edge of the film is fragile and easy to be damaged. In this work, we fabricated free-standing Ga_2O_3 thin films using the water-soluble perovskite Sr_3Al_2O_6 as a sacrificial buffer layer. The obtained Ga_2O_3 thin films were polycrystalline. The thickness and dimension of the films were controllable. A flexible Ga_2O_3solar-blind UV photodetector was fabricated by transferring the free-standing Ga_2O_3 film on a flexible polyethylene terephthalate substrate. The results displayed that the photoelectric performances of the flexible Ga_2O_3 photodetector were not sensitive to bending of the device. The free-standing Ga_2O_3 thin films synthesized through the method described here can be transferred to any substrates or integrated with other thin films to fabricate electronic devices.
基金financially supported by the National Natural Science Foundation of China (Nos. 51401046, 51572042, 61131005, 61021061, and 61271037)International Cooperation Projects (Nos. 2013HH0003 and 2015DFR50870)+3 种基金the 111 Project (No. B13042)the Sichuan Province S&T program (Nos. 2014GZ0003, 2015GZ0091, and 2015GZ0069)Fundamental Research Funds for the Central Universitiesthe start-up fund from the University of Electronic Science and Technology of China
文摘VO_2 thin films were grown on silicon substrates using Al_2O_3 thin films as the buffer layers. Compared with direct deposition on silicon, VO_2 thin films deposited on Al_2O_3 buffer layers experience a significant improvement in their microstructures and physical properties. By optimizing the growth conditions, the resistance of VO_2 thin films can change by four orders of magnitude with a reduced thermal hysteresis of 4 °C at the phase transition temperature. The electrically driven phase transformation was measured in Pt/Si/Al_2O_3/VO_2/Au heterostructures. The introduction of a buffer layer reduces the leakage current and Joule heating during electrically driven phase transitions. The C–V measurement result indicates that the phase transformation of VO_2 thin films can be induced by an electrical field.
基金supported by National Natural Science Foundation of China(No.11175024)the Beijing Natural Science Foundation(No.1112012)+1 种基金Science and Technology on Surface Engineering Laboratorythe Beijing Education Committee(No.BM201002),2011BAD24B01,KM201110015008,KM201010015005 and PHR20110516
文摘Without extra heating, Al2O3 thin films were deposited on a hydrogen-terminated Si substrate etched in hydrofluoric acid by using a self-built electron cyclotron resonance （ECR） plasma-assisted atomic layer deposition （ALD） device with Al（CH3）3 （trimethylaluminum; TMA） and O2 used as precursor and oxidant, respectively. During the deposition process, Ar was in- troduced as a carrier and purging gas. The chemical composition and microstructure of the as-deposited Al2O3 films were characterized by using X-ray diffraction （XRD）, an X-ray photo- electric spectroscope （XPS）, a scanning electron microscope （SEM）, an atomic force microscope （AFM） and a high-resolution transmission electron microscope （HRTEM）. It achieved a growth rate of 0.24 nm/cycle, which is much higher than that deposited by thermal ALD. It was found that the smooth surface thin film was amorphous alumina, and an interfacial layer formed with a thickness of ca. 2 nm was observed between theAl2O3 film and substrate Si by HRTEM. We conclude that ECR plasma-assisted ALD can growAl2O3 films with an excellent quality at a high growth rate at ambient temperature.
基金Project supported by the National Natural Science Foundation of China （Grant No 10174006）.
文摘Microwave characteristics of MgB2/Al2O3 superconducting thin films were investigated by coplanar resonator technique. The thin films studied have different grain sizes resulting from different growth techniques. The experimental results can be described very well by a grain-size model which combines coplanar resonator theory and Josephson junction network model. It was found that the penetration depth and surface resistance of thin films with smaller grain sizes are larger than those of thin films with larger grain sizes.
文摘The stabilization of γ-aluminium oxyni-tride spinel(γ-AlON) has been investigated by addition of MgO,MgAl2O4,etc.,in reaction process.The results indicated that there are wider solid solution areas near ,Al2O3-rich side in AlN-Al2O3-MgO ternary systems,The content of stabilized AlON phase in samples is related to heating temperatures,additives,etc.The lattice parameters of their AlON phases could be well describedby the equation: a0=0.7900+0.0375[MgO]+0.015[AlN](nm)
基金Supported by the National Natural Science Foundation of China under Grant Nos 51337002,51077028,51502063 and 51307046the Foundation of Harbin Science and Technology Bureau of Heilongjiang Province under Grant No RC2014QN017034
文摘The distributions of traps and electron density in the interfaces between polyimide （PI） matrix and Al2O3 nanoparticles are researched using the isothermal decay current and the small-angle x-ray scattering （SAXS） tests. According to the electron density distribution for quasi two-phase mixture doped by spherical nanoparticles, the electron densities in the interfaces of PI/Al2O3 nanocomposite films are evaluated. The trap level density and carrier mobility in the interface are studied. The experimental results show that the distribution and the change rate of the electron density in the three layers of interface are different, indicating different trap distributions in the interface layers. There is a maximum trap level density in the second layer, where the maximum trap level density for the nanocomposite film doped by 25 wt% is 1.054 × 10^22 eV·m^-3 at 1.324eV, resulting in the carrier mobility reducing. In addition, both the thickness and the electron density of the nanocomposite film interface increase with the addition of the doped Al2O3 contents. Through the study on the trap level distribution in the interface, it is possible to further analyze the insulation mechanism and to improve the performance of nano-dielectric materials.
基金supported by National Natural Science Foundation of China (No.11175024)Beijing Natural Science Foundation (No.1112012),2011BAD24B01+1 种基金Scientific Research Common Program of Beijing Municipal Commission of Education(KM201110015008,KM201010015005)Funding Project for Academic Human Resources Development in Institutions of Higher Learning Under theJurisdiction of Beijing Municipality (PHR20110516)
文摘Atomic layer deposition （ALD） technique is used in the preparation of organic/inorganic layers, which requires uniform surfaces with their thickness down to several nanometers. For film with such thickness, the growth mode defined as the arrangement of clusters on the surface during the growth is of significance. In this work, Al2O3 thin film was deposited on various interfacial species of pre-treated polyethylene terephthalate （PET, 12 μm） by plasma assisted atomic layer deposition （PA-ALD）, where trimethyl aluminium was used as the Al precursor and O2 as the oxygen source. The interracial species, -NH3, -OH, and -COOH as well as SiCHO （derived from monomer of HMDSO plasma）, were grafted previously by plasma and chemical treatments. The growth mode of PA-ALD Al2O3 was then investigated in detail by combining results from in-situ diagnosis of spectroscopic ellipsometry （SE） and ex-situ characterization of as-deposited layers from the morphologies scanned by atomic force microscopy （AFM）. In addition, the oxygen transmission rates （OTR） of the original and treated plastic films were measured. The possible reasons for the dependence of the OTR values on the surface species were explored.
