AlN/Al0.3Ga0.7N superlattices were grown on (0001) sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The superlattice period varies from 6 to 30. The layer thickness of different period stack was ...AlN/Al0.3Ga0.7N superlattices were grown on (0001) sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The superlattice period varies from 6 to 30. The layer thickness of different period stack was designed. GaN or AlGaN template was employed for growing AlN/AlGaN superlattices. Reflectivity, SEM, AFM and XRD data of the AlxGa1-xN/AlN superlattices are presented. It is found that the templates used have an intensive impact on surface roughness and interfacial properties of following AlN/AlGaN superlattices. The result of atomic force microscopy indicates that AlN/AlGaN superlattices grown on GaN template exhibit quasi-two-dimensional growth mode. The resulting superlattice has a smooth surface morphology and distinct interface. No crack is observed in the area of a 2-inch wafer.展开更多
Structural characteristics of Alo.55 Gao.45N epilayer were investigated by high resolution x-ray diffraction（HRXRD）and transmission electron microscopy（TEM）;the epilayer was grown on GaN/sapphire substrates using ...Structural characteristics of Alo.55 Gao.45N epilayer were investigated by high resolution x-ray diffraction（HRXRD）and transmission electron microscopy（TEM）;the epilayer was grown on GaN/sapphire substrates using a high-temperature A1 N interlayer by metal organic chemical vapor deposition technique.The mosaic characteristics including tilt,twist,heterogeneous strain,and correlation lengths were extracted by symmetric and asymmetric XRD rocking curves as well as reciprocal space map（RSM）.According to Williamson-Hall plots,the vertical coherence length of AlGaN epilayer was calculated,which is consistent with the thickness of AlGaN layer measured by cross section TEM.Besides,the lateral coherence length was determined from RSM as well.Deducing from the tilt and twist results,the screw-type and edge-type dislocation densities are 1.0×10~8 cm^（-2） and 1.8×10^（10） cm^（-2）,which agree with the results observed from TEM.展开更多
基金Supported by the Special Funds for Major State Basic Research Project (973 Project) (Grant No.2006CB6049)the Hi-tech Research Project (Grant Nos.2006AA03A103,2006AA03A118,and 2006AA03A142)+1 种基金the National Natural Science Foundation of China (Grant No.60676057)the Research Fund for the Doctoral Program of Higher Education of China (Grant No.20050284004)
文摘AlN/Al0.3Ga0.7N superlattices were grown on (0001) sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The superlattice period varies from 6 to 30. The layer thickness of different period stack was designed. GaN or AlGaN template was employed for growing AlN/AlGaN superlattices. Reflectivity, SEM, AFM and XRD data of the AlxGa1-xN/AlN superlattices are presented. It is found that the templates used have an intensive impact on surface roughness and interfacial properties of following AlN/AlGaN superlattices. The result of atomic force microscopy indicates that AlN/AlGaN superlattices grown on GaN template exhibit quasi-two-dimensional growth mode. The resulting superlattice has a smooth surface morphology and distinct interface. No crack is observed in the area of a 2-inch wafer.
基金Project supported by the National Key Research and Development Project of China(Grant No.2016YFB0400100)the Hi-tech Research Project of China(Grant Nos.2014AA032605 and 2015AA033305)+5 种基金the National Natural Science Foundation of China(Grant Nos.61274003,61422401,51461135002,and61334009)the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BY2013077,BK20141320,and BE2015111)the Project of Green Young and Golden Phenix of Yangzhou City,the Postdoctoral Sustentation Fund of Jiangsu Province,China(Grant No.1501143B)the Project of Shandong Provinceial Higher Educational Science and Technology Program,China(Grant No.J13LN08)the Solid State Lighting and Energy-saving Electronics Collaborative Innovation Center,Priority Academic Program Development of Jiangsu Higher Education Institutions(PAPD)Research Funds from NJU–Yangzhou Institute of Opto-electronics
文摘Structural characteristics of Alo.55 Gao.45N epilayer were investigated by high resolution x-ray diffraction（HRXRD）and transmission electron microscopy（TEM）;the epilayer was grown on GaN/sapphire substrates using a high-temperature A1 N interlayer by metal organic chemical vapor deposition technique.The mosaic characteristics including tilt,twist,heterogeneous strain,and correlation lengths were extracted by symmetric and asymmetric XRD rocking curves as well as reciprocal space map（RSM）.According to Williamson-Hall plots,the vertical coherence length of AlGaN epilayer was calculated,which is consistent with the thickness of AlGaN layer measured by cross section TEM.Besides,the lateral coherence length was determined from RSM as well.Deducing from the tilt and twist results,the screw-type and edge-type dislocation densities are 1.0×10~8 cm^（-2） and 1.8×10^（10） cm^（-2）,which agree with the results observed from TEM.
