期刊文献+
共找到88篇文章
< 1 2 5 >
每页显示 20 50 100
带有原位生长SiN_(x)绝缘层的AlN/GaN毫米波高效率MIS-HEMT器件
1
作者 陈晓娟 张一川 +6 位作者 张昇 李艳奎 牛洁斌 黄森 马晓华 张进成 魏珂 《红外与毫米波学报》 SCIE EI CAS CSCD 北大核心 2023年第4期483-489,共7页
本文采用金属有机化学气相沉积(MOCVD)生长原位SiN_(x)栅介质制备了用于Ka波段高功率毫米波应用的AlN/GaN金属绝缘体半导体高电子迁移率晶体管(MIS-HEMTs)。原位生长SiN_(x)栅介质显著抑制了栅反向漏电、栅介质/AlN界面态密度和电流坍... 本文采用金属有机化学气相沉积(MOCVD)生长原位SiN_(x)栅介质制备了用于Ka波段高功率毫米波应用的AlN/GaN金属绝缘体半导体高电子迁移率晶体管(MIS-HEMTs)。原位生长SiN_(x)栅介质显著抑制了栅反向漏电、栅介质/AlN界面态密度和电流坍塌。所研制的MIS HEMTs在V_(GS)=2 V时最大饱和输出电流为2.2 A/mm,峰值跨导为509 m S/mm,在V_(GS)=-30 V时肖特基栅漏电流为4.7×10^(-6)A/mm。采用0.15μm T形栅技术,获得98 GHz的fT和165 GHz的f_(MAX)。大信号测量表明,在连续波模式下,漏极电压V_(DS)=8 V时,MIS HEMT在40 GHz下输出功率密度2.3 W/mm,45.2%的功率附加效率(PAE),而当V_(DS)增加到15 V时,功率密度提升到5.2 W/mm,PAE为42.2%。 展开更多
关键词 aln/gan 金属绝缘体半导体高电子迁移率晶体管 KA波段 低损耗 低偏压
下载PDF
AlN/GaN HEMT毫米波器件结构仿真研究
2
作者 李晗溱 宓珉瀚 +2 位作者 周雨威 龚灿 马晓华 《空间电子技术》 2023年第5期58-63,共6页
为实现更高工作频率的氮化镓(gallium nitride,GaN)基高电子迁移率晶体管(high electron mobility transistor,HEMT)器件,采用薄势垒外延结构、缩小栅长对提升器件的截止频率十分重要。通过对不同氮化铝(aluminium nitride,AIN)势垒层... 为实现更高工作频率的氮化镓(gallium nitride,GaN)基高电子迁移率晶体管(high electron mobility transistor,HEMT)器件,采用薄势垒外延结构、缩小栅长对提升器件的截止频率十分重要。通过对不同氮化铝(aluminium nitride,AIN)势垒层厚度以及不同尺寸栅长的AlN/GaN HEMT进行仿真分析,系统研究不同结构对器件短沟道效应、直流及频率等特性的影响。首先固定栅长为100nm,研究了跨导与截止频率随AlN势垒层厚度的变化情况。跨导随势垒层厚度的增加先增大后减小。当势垒层厚度为4nm时,跨导达到最大值(592mS/mm),截止频率也达到最大值。为尽可能提升器件的截止频率,同时避免器件出现短沟道效应,固定AlN势垒层厚度为4nm,研究器件截止频率与短沟道效应随器件栅长的变化情况。仿真表明器件截止频率随栅长的减小而增大,50nm栅长的器件截止频率最高,但栅长为50nm时器件短沟道效应严重,此时器件纵横比(L_(g)/T_(bar))为12.5。因此需要提升器件的纵横比,当器件栅长达到100nm时(L_(g)/T_(bar)=25),器件短沟道效应得到抑制,且具有较高的截止频率。仿真结果表明,AlN HEMT具有较高的截止频率,同时应采用较大的纵横比设计(纵横比为25左右)以抑制短沟道效应,为后续高频AlN/GaN HEMTs器件的制备提供了理论依据。 展开更多
关键词 gan HEMTs aln 高频 短沟道效应
下载PDF
AlGaN/AlN/GaN肖特基二极管的电学性能 被引量:1
3
作者 王新华 王晓亮 +10 位作者 肖红领 王翠梅 冉军学 罗卫军 王保柱 冯春 杨翠柏 马志勇 胡国新 曾一平 李晋闽 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第z1期388-390,共3页
利用金属有机化学气相淀积(MOCVD)方法生长的AlGaN/AlN/GaN/蓝宝石材料制备了AlGaN肖特基二极管.器件的肖特基接触和欧姆接触分别为Ti/Pt和Ti/Al/Ti/Au,均采用电子束蒸发的方法沉积.AlGaN表面欧姆接触的比接触电阻率为7.48×10-4Ω/... 利用金属有机化学气相淀积(MOCVD)方法生长的AlGaN/AlN/GaN/蓝宝石材料制备了AlGaN肖特基二极管.器件的肖特基接触和欧姆接触分别为Ti/Pt和Ti/Al/Ti/Au,均采用电子束蒸发的方法沉积.AlGaN表面欧姆接触的比接触电阻率为7.48×10-4Ω/cm2,器件的I-V测试表明该AlGaN肖特基二极管具有较好的整流特性.根据器件的正向,I-V特性计算得到器件的势垒高度和理想因子分别为0.57eV和4.83.将器件在300℃中温退火,器件的电学性能有所改善. 展开更多
关键词 Algan/aln/gan异质结 肖特基二极管 势垒高度
下载PDF
Al组分阶变势垒层AlGaN/AlN/GaN HEMTs的制备及性能
4
作者 马志勇 王晓亮 +4 位作者 胡国新 肖红领 王翠梅 冉军学 李建平 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第z1期394-397,共4页
用金属有机物化学气相沉积(MOCVD)技术,在蓝宝石衬底上生长了Al组分阶变势垒层结构的AlGaN/AlN/GaN高电子迁移率晶体管结构材料.用三晶X射线衍射(TCXRD)和原子力显微镜(AFM)对材料的结构、界面特性和表面形貌进行了研究.测试结果表明该... 用金属有机物化学气相沉积(MOCVD)技术,在蓝宝石衬底上生长了Al组分阶变势垒层结构的AlGaN/AlN/GaN高电子迁移率晶体管结构材料.用三晶X射线衍射(TCXRD)和原子力显微镜(AFM)对材料的结构、界面特性和表面形貌进行了研究.测试结果表明该材料具有优良的晶体质量和表面形貌,GaN(0002)衍射蜂的半高宽为4.56',AFM 5μm×5μm扫描面积的表面均方根粗糙度为0.159nm;TCXRD测试中在AlGaN(0002)衍射峰右侧观察到Pendell(o)sung条纹,表明AlGaN势垒层具有良好的晶体质量和高的异质结界面质量. 展开更多
关键词 ALgan/aln/gan Pendell(o)sung条纹 金属有机物化学气相沉积 高电子迁移率晶体管
下载PDF
AlN/GaN量子阱中光学声子所限制的电子迁移率
5
作者 贾秀敏 班士良 《河南师范大学学报(自然科学版)》 CAS CSCD 北大核心 2011年第3期64-67,71,共5页
在介电连续模型和单轴模型的框架下,采用雷-丁平衡方程理论,考虑量子阱中界面光学声子模和局域体光学声子模的影响,分别计算了纤锌矿型和闪锌矿型AlN/GaN量子阱中电子平行于异质结界面方向的迁移率,给出迁移率随阱宽的变化关系,并讨论... 在介电连续模型和单轴模型的框架下,采用雷-丁平衡方程理论,考虑量子阱中界面光学声子模和局域体光学声子模的影响,分别计算了纤锌矿型和闪锌矿型AlN/GaN量子阱中电子平行于异质结界面方向的迁移率,给出迁移率随阱宽的变化关系,并讨论了结构各向异性效应对电子迁移率的影响. 展开更多
关键词 迁移率 光学声子模 量子阱 纤锌矿 闪锌矿 aln/gan
下载PDF
MOCVD生长AlN/GaN化学反应路径的量子化学研究 被引量:2
6
作者 王宝良 左然 +1 位作者 孟素慈 陈鹏 《人工晶体学报》 EI CAS CSCD 北大核心 2015年第8期2237-2244,共8页
应用量子化学的密度泛函理论,对MOCVD生长GaN/AlN薄膜的反应路径进行理论计算和分析,特别是针对III族TMX(X=Ga,Al)与V族NH3的反应路径与温度的关系进行研究。计算结果表明:当温度T≤473.15 K时,反应自由能△G〈0,TMX与NH3自发生成配... 应用量子化学的密度泛函理论,对MOCVD生长GaN/AlN薄膜的反应路径进行理论计算和分析,特别是针对III族TMX(X=Ga,Al)与V族NH3的反应路径与温度的关系进行研究。计算结果表明:当温度T≤473.15 K时,反应自由能△G〈0,TMX与NH3自发生成配位加合物TMX∶NH3;当T≥573.15 K时,△G〉0,TMX∶NH3将重新分解为TMX和NH3。在473.15 K≤T≤573.15 K区间,将存在△G=0,即加合反应达到平衡,反应为双向可逆。随着温度的升高,从加合物变为氨基物DMX∶NH2的反应概率加大。TMX和MMX的直接热解反应均需要高温激活,而DMX变为MMX则较容易发生。当T〉873.15 K时,DMGa变为MMGa的热解反应将自发进行;当T〉1273.15 K时,DMAl变为MMAl的热解反应将自发进行。在自由基CH3参与下,TMX→DMX(X=Ga、Al)的能垒仅为TMX直接热解能垒的一半,约为30~40 kcal/mol;在自由基H参与下,TMGa和TMAl的热解反应能垒更低,约为16~20kcal/mol。因此,自由基H的产生将大大促进TMX的热解。 展开更多
关键词 aln/gan MOCVD 密度泛函理论 化学反应路径
下载PDF
InAlN/AlN/GaN HEMT电学特性仿真与分析 被引量:1
7
作者 杨娟 张小玲 吕长志 《微电子学》 CAS CSCD 北大核心 2012年第3期411-414,共4页
研究了一种新型GaN基HEMT结构,即InAlN/AlN/GaN异质结层结构,并对其直流特性以及频率特性进行了仿真。通过理论分析,结合TCAD软件,与常规AlGaN/AlN/GaNHEMT进行对比。对栅长为1μm的器件进行仿真,结果表明,器件的最大跨导为450mS/mm,最... 研究了一种新型GaN基HEMT结构,即InAlN/AlN/GaN异质结层结构,并对其直流特性以及频率特性进行了仿真。通过理论分析,结合TCAD软件,与常规AlGaN/AlN/GaNHEMT进行对比。对栅长为1μm的器件进行仿真,结果表明,器件的最大跨导为450mS/mm,最大电流密度为2A/mm,电流增益截止频率fT=15GHz,最高振荡频率fmax=35GHz。 展开更多
关键词 Inaln/aln/gan HEMT TCAD
下载PDF
AlGaN背势垒对SiC衬底AlN/GaN HEMT器件的影响
8
作者 王维 顾国栋 +1 位作者 敦少博 吕元杰 《半导体技术》 CAS CSCD 北大核心 2016年第5期378-383,共6页
利用相同器件工艺在两种不同材料结构上制备了Al N/Ga N高电子迁移率晶体管(HEMT),研究了Al Ga N背势垒结构对器件特性的影响。测试结果表明,有背势垒结构的器件最大饱和电流密度和峰值跨导要小于无背势垒结构器件,栅压偏置为+1 V时,无... 利用相同器件工艺在两种不同材料结构上制备了Al N/Ga N高电子迁移率晶体管(HEMT),研究了Al Ga N背势垒结构对器件特性的影响。测试结果表明,有背势垒结构的器件最大饱和电流密度和峰值跨导要小于无背势垒结构器件,栅压偏置为+1 V时,无背势垒的Al N/Ga N HEMT器件最大饱和电流密度为1.02 A·mm-1,峰值跨导为304 m S·mm-1,有背势垒结构的器件饱和电流密度为0.75 A·mm-1,峰值跨导为252 m S·mm-1。有背势垒结构器件的亚阈值斜率为136 m V/dec,击穿电压为78 V;无背势垒结构器件的亚阈值斜率为150 m V/dec,击穿电压为64 V。栅长为0.25μm有背势垒结构的器件电流截止频率高于无背势垒结构器件,最高振荡频率要低于无背势垒结构的器件。 展开更多
关键词 aln/gan高电子迁移率晶体管(HEMT) SIC衬底 Algan背势垒 直流(DC)特性 射频(RF)特性
下载PDF
光学声子散射对纤锌矿AlN/GaN异质结中电子迁移率的影响
9
作者 周晓娟 班士良 《内蒙古大学学报(自然科学版)》 CAS CSCD 北大核心 2008年第3期263-268,共6页
考虑导带弯曲和有限高势垒,利用变分法和力平衡方程研究了界面光学声子和半空间光学声子散射对纤锌矿AlN/GaN异质结中二维电子气(2DEG)迁移率的影响,数值计算了各支光学声子作用下迁移率随电子面密度及温度的变化.结果表明:总迁移率随... 考虑导带弯曲和有限高势垒,利用变分法和力平衡方程研究了界面光学声子和半空间光学声子散射对纤锌矿AlN/GaN异质结中二维电子气(2DEG)迁移率的影响,数值计算了各支光学声子作用下迁移率随电子面密度及温度的变化.结果表明:总迁移率随电子面密度先上升后下降,随温度升高则一直呈下降趋势.在较低电子面密度时,沟道区的体纵光学声子散射为影响迁移率的主要因素;当电子面密度大于4×1013/cm2时,界面声子散射成为主要因素. 展开更多
关键词 aln/gan异质结 电子迁移率 光学声子散射
下载PDF
2D study of AlGaN/AlN/GaN/AlGaN HEMTs' response to traps 被引量:2
10
作者 A.Hezabra N.A.Abdeslam +1 位作者 N.Sengouga M.C.E.Yagoub 《Journal of Semiconductors》 EI CAS CSCD 2019年第2期43-48,共6页
In this work, the effects of GaN channel traps and temperature on the performance of AlGaN/AlN/GaN/AlGaN high electron mobility transistors(HEMTs) on Si(111) substrate, were investigated. 2 D simulations carried out u... In this work, the effects of GaN channel traps and temperature on the performance of AlGaN/AlN/GaN/AlGaN high electron mobility transistors(HEMTs) on Si(111) substrate, were investigated. 2 D simulations carried out using the Silvaco TCAD simulator tool for different drain and gate voltages showed that acceptor-like traps in the channel have a significant influence on the DC and RF characteristics. It was found that deeper acceptors below the conduction band with larger concentration have a more pronounced effect on the transistor performance. Meanwhile, the donor-like traps show no influence. Pulsing the device with different pulse widths and bias conditions, as well as increasing temperature, showed that the traps are more ionized when the pulse is wider or the temperature is higher, which can degrade the drain current and thus the DC characteristics of the transistor. Passivation of the transistor has also a beneficial effect on performance. 展开更多
关键词 ALgan HEMT ALgan/aln/gan structure silicon SUBSTRATE Silvaco TRAPPING effects channel TRAPS
下载PDF
Comparison of GaN/AlGaN/AlN/GaN HEMTs Grown on Sapphire with Fe-Modulation-Doped and Unintentionally Doped GaN Buffer:Material Growth and Device Fabrication 被引量:1
11
作者 巩稼民 王权 +4 位作者 闫俊达 刘峰奇 冯春 王晓亮 王占国 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第11期99-103,共5页
AlGaN/GaN high electron mobility transistors (HEMTs) grown on Fe-modulation-doped (MD) and unintentionally doped (UID) GaN buffer layers are investigated and compared. Highly resistive GaN buffers (10^9Ω·... AlGaN/GaN high electron mobility transistors (HEMTs) grown on Fe-modulation-doped (MD) and unintentionally doped (UID) GaN buffer layers are investigated and compared. Highly resistive GaN buffers (10^9Ω·cm) are induced by individual mechanisms for the electron traps' formation: the Fe MD buffer (sample A) and the UID buffer with high density of edge-type dislocations (7.24×10^9cm^-2, sample B). The 300K Hall test indicates that the mobility of sample A with Fe doping (2503cm^2V^-1s^-1) is much higher than sample B (1926cm^2V^-1s^-1) due to the decreased scattering effect on the two-dimensional electron gas. HEMT devices are fabricated on the two samples and pulsed I–V measurements are conducted. Device A shows better gate pinch-off characteristics and a higher threshold voltage (-2.63V) compared with device B (-3.71V). Lower gate leakage current |IGS| of device A (3.32×10^-7A) is present compared with that of device B (8.29×10^-7A). When the off-state quiescent points Q_2 (V GQ2=-8V, V DQ2=0V) are on, V th hardly shifts for device A while device B shows +0.21V positive threshold voltage shift, resulting from the existence of electron traps associated with the dislocations in the UID-GaN buffer layer under the gate. Under pulsed I–V and transconductance G m–V GS measurement, the device with the Fe MD-doped buffer shows more potential in improving reliability upon off-state stress. 展开更多
关键词 gan in HEMT is Comparison of gan/Algan/aln/gan HEMTs Grown on Sapphire with Fe-Modulation-Doped and Unintentionally Doped gan Buffer:Material Growth and Device Fabrication of Fe with on
下载PDF
Effects of donor density and temperature on electron systems in AlGaN/AlN/GaN and AlGaN/GaN structures 被引量:1
12
作者 张金风 王冲 +1 位作者 张进城 郝跃 《Chinese Physics B》 SCIE EI CAS CSCD 2006年第5期1060-1066,共7页
It was reported by Shen et al that the two-dimensional electron gas (2DEG) in an AlGaN/AlN/GaN structure showed high density and improved mobility compared with an AlGaN/GaN structure, but the potential of the AlGaN... It was reported by Shen et al that the two-dimensional electron gas (2DEG) in an AlGaN/AlN/GaN structure showed high density and improved mobility compared with an AlGaN/GaN structure, but the potential of the AlGaN/AlN/GaN structure needs further exploration. By the self-consistent solving of one-dimensional Schroedinger- Poisson equations, theoretical investigation is carried out about the effects of donor density (0-1×10^19 cm^-3) and temperature (50-500 K) on the electron systems in the AlGaN/AlN/GaN and AlGaN/GaN structures. It is found that in the former structure, since the effective △Ec is larger, the efficiency with which the 2DEG absorbs the electrons originating from donor ionization is higher, the resistance to parallel conduction is stronger, and the deterioration of 2DEG mobility is slower as the donor density rises. When temperature rises, the three-dimensional properties of the whole electron system become prominent for both of the structures, but the stability of 2DEG is higher in the former structure, which is also ascribed to the larger effective △Ec. The Capacitance-Voltage (C - V) carrier density profiles at different temperatures are measured for two Schottky diodes on the considered heterostructure samples separately, showing obviously different 2DEG densities. And the temperature-dependent tendency of the experimental curves agrees well with our calculations. 展开更多
关键词 ALgan/aln/gan ALgan/gan two-dimensional electron gas C - V carrier density profile
下载PDF
The physical process analysis of the capacitance-voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors
13
作者 王鑫华 赵妙 +3 位作者 刘新宇 蒲颜 郑英奎 魏珂 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第9期536-542,共7页
This paper deduces the expression of the Schottky contact capacitance of AlGaN/A1N/GaN high electron mobility transistors (HEMTs), which will help to understand the electron depleting process. Some material paramete... This paper deduces the expression of the Schottky contact capacitance of AlGaN/A1N/GaN high electron mobility transistors (HEMTs), which will help to understand the electron depleting process. Some material parameters related with capacitance-voltage profiling are given in the expression. Detailed analysis of the forward-biased capacitance has been carried on. The gate capacitance of undoped AlGaN/AlN/GaN HEMT will fall under forward bias. If a rising profile is obviously observed, the donor-like impurity or trap is possibly introduced in the barrier. 展开更多
关键词 ALgan/aln/gan HEMT capacitance-voltage characteristics TRAP
下载PDF
Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
14
作者 吕元杰 冯志红 +7 位作者 林兆军 郭红雨 顾国栋 尹甲运 王元刚 徐鹏 宋旭波 蔡树军 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第7期645-648,共4页
Electron mobility scattering mechanism in AlN/GaN heterostuctures is investigated by temperature-dependent Hall measurement, and it is found that longitudinal optical phonon scattering dominates electron mobility near... Electron mobility scattering mechanism in AlN/GaN heterostuctures is investigated by temperature-dependent Hall measurement, and it is found that longitudinal optical phonon scattering dominates electron mobility near room temperature while the interface roughness scattering becomes the dominant carrier scattering mechanism at low temperatures (~ 100 K). Based on measured current-voltage characteristics of prepared rectangular AlN/GaN heterostructure field-effect transistor under different temperatures, the temperature-dependent variation of electron mobility under different gate biases is inves- tigated. The polarization Coulomb field (PCF) scattering is found to become an important carrier scattering mechanism after device processing under different temperatures. Moreover, it is found that the PCF scattering is not generated from the thermal stresses, but from the piezoelectric contribution induced by the electrical field in the thin A1N barrier layer. This is attributed to the large lattice mismatch between the extreme thinner AlN barrier layer and GaN, giving rise to a stronger converse piezoelectric effect. 展开更多
关键词 aln/gan electron mobility polarization Coulomb field scattering POLARIZATION
下载PDF
Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors
15
作者 曹芝芳 林兆军 +2 位作者 吕元杰 栾崇彪 王占国 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第4期394-398,共5页
Rectangular Schottky drain AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate contact areas and conventional AlGaN/AlN/GaN HFETs as control were both fabricated with same size. It was... Rectangular Schottky drain AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate contact areas and conventional AlGaN/AlN/GaN HFETs as control were both fabricated with same size. It was found there is a significant difference between Schottky drain AlGaN/AlN/GaN HFETs and the control group both in drain series resistance and in two-dimensional electron gas (2DEG) electron mobility in the gate–drain channel. We attribute this to the different influence of Ohmic drain contacts and Schottky drain contacts on the strained AlGaN barrier layer. For conventional AlGaN/AlN/GaN HFETs, annealing drain Ohmic contacts gives rise to a strain variation in the AlGaN barrier layer between the gate contacts and the drain contacts, and results in strong polarization Coulomb field scattering in this region. In Schottky drain AlGaN/AlN/GaN HFETs, the strain in the AlGaN barrier layer is distributed more regularly. 展开更多
关键词 Algan/aln/gan HFET Schottky drain contact Algan barrier layer strain polarization Coulomb field scattering
下载PDF
Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor
16
作者 于英霞 林兆军 +3 位作者 栾崇彪 王玉堂 陈弘 王占国 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第6期530-535,共6页
We simulate the current-voltage (I-V) characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate lengths using the quasi-two-dimensional (quasi-2D) model. The calculati... We simulate the current-voltage (I-V) characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate lengths using the quasi-two-dimensional (quasi-2D) model. The calculation results obtained using the modified mobility model are found to accord well with the experimental data. By analyzing the variation of the electron mobility for the two-dimensional electron gas (213EG) with the electric field in the linear region of the AlGaN/AlN/GaN HFET I-V output characteristics, it is found that the polarization Coulomb field scattering still plays an important role in the electron mobility of AlGaN/AlN/GaN HFETs at the higher drain voltage and channel electric field. As drain voltage and channel electric field increase, the 2DEG density reduces and the polarization Coulomb field scattering increases, as a result, the 2DEG electron mobility decreases. 展开更多
关键词 Algan/aln/gan heterostructure field-effect transistors quasi-two-dimensional model the polarization Coulomb field scattering the two-dimensional electron gas mobility
下载PDF
Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes
17
作者 曹芝芳 林兆军 +4 位作者 吕元杰 栾崇彪 于英霞 陈弘 王占国 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第1期414-418,共5页
Rectangular AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) were fabricated, and the gate and the source of the HFETs consisted of AlGaN/AlN/CaN Schottky barrier diodes (SBDs). Based on the measured... Rectangular AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) were fabricated, and the gate and the source of the HFETs consisted of AlGaN/AlN/CaN Schottky barrier diodes (SBDs). Based on the measured forward current-voltage and the capacitance-voltage characteristics of the AlGaN/AlN/GaN SBDs, the series resistance under the Schottky contacts (Rs) was calculated using the method of power consumption, which has been proved to be valid. Finally, the method of power consumption for calculating RS was successfully used to study the two-dimensional electron gas electron mobility for a series of circular AlGaN/AlN/GaN SBDs. It is shown that the series resistance under the Schottky contacts cannot be neglected and is important for analysing and characterizing the AIGaN/AIN/GaN SBDs and the AlGaN/AlN/GaN HFETs. 展开更多
关键词 Algan/aln/gan heterostructures Schottky barrier diodes power consumption seriesresistance
下载PDF
在6H-SiC衬底上用低压MOVPE法生长AlN和GaN的过程中用(AlN/GaN)多层缓冲层来控制残余应力(英文)
18
作者 Horie M Ishihara Y +1 位作者 Takano T Kawanishi H 《发光学报》 EI CAS CSCD 北大核心 2001年第S1期5-9,共5页
人们已提出用BAlGaN四元系材料制备紫外光谱区的光发射器件。GaN和AlN二元系是这种四元材料在器件应用中的基础材料。 6H SiC衬底在氮化物生长中因其晶格失配小是一大优势 ,而且SiC衬底的热膨胀系数也和AlN的很接近。然而 ,对于AlN外延... 人们已提出用BAlGaN四元系材料制备紫外光谱区的光发射器件。GaN和AlN二元系是这种四元材料在器件应用中的基础材料。 6H SiC衬底在氮化物生长中因其晶格失配小是一大优势 ,而且SiC衬底的热膨胀系数也和AlN的很接近。然而 ,对于AlN外延层来说 ,需要控制其中的残余应力 ,因为在SiC衬底上直接生长的AlN外延层中存在着因晶格失配所产生的压缩应力。另一方面 ,在SiC衬底上直接生长的GaN外延层中存在着拉伸应力。这种拉伸应力起源于GaN比衬底有着更大的热膨胀系数。本文讨论了在 6H SiC衬底上生长的氮化物外延层中残余应力的类型、数量及控制。为此目的 ,提出了在 6H SiC衬底上 ,无论是生长AlN ,还是生长GaN ,都可以采用 (GaN/AlN)多层缓冲层的办法 ,作为控制残余应力的有效方法。我们还讨论了AlN和GaN外延层的结晶质量和残余应力间的关系。 展开更多
关键词 残余应力控制 alngan外延层 (aln/gan)多缓冲层 低压MOVPE
下载PDF
在6H-SiC衬底上用低压MOVPE法生长AlN和GaN的过程中用(AlN/GaN)多层缓冲层来控制残余应力
19
作者 Ishihara Y Kawanishi H Takano T Horie M 《发光学报》 EI CAS CSCD 北大核心 2001年第z1期5-9,共5页
人们已提出用BAlGaN四元系材料制备紫外光谱区的光发射器件.GaN和AlN二元系是这种四元材料在器件应用中的基础材料.6H-SiC衬底在氮化物生长中因其晶格失配小是一大优势,而且SiC衬底的热膨胀系数也和AlN的很接近.然而,对于AlN外延层来说... 人们已提出用BAlGaN四元系材料制备紫外光谱区的光发射器件.GaN和AlN二元系是这种四元材料在器件应用中的基础材料.6H-SiC衬底在氮化物生长中因其晶格失配小是一大优势,而且SiC衬底的热膨胀系数也和AlN的很接近.然而,对于AlN外延层来说,需要控制其中的残余应力,因为在SiC衬底上直接生长的AlN外延层中存在着因晶格失配所产生的压缩应力.另一方面,在SiC衬底上直接生长的GaN外延层中存在着拉伸应力.这种拉伸应力起源于GaN比衬底有着更大的热膨胀系数.本文讨论了在6H-SiC衬底上生长的氮化物外延层中残余应力的类型、数量及控制.为此目的,提出了在6H-SiC衬底上,无论是生长AlN,还是生长GaN,都可以采用(GaN/AlN)多层缓冲层的办法,作为控制残余应力的有效方法.我们还讨论了AlN和GaN外延层的结晶质量和残余应力间的关系. 展开更多
关键词 残余应力控制 alngan外延层 (aln/gan)多缓冲层 低压MOVPE
下载PDF
Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors
20
作者 闫俊达 王权 +11 位作者 王晓亮 肖红领 姜丽娟 殷海波 冯春 王翠梅 渠慎奇 巩稼民 张博 李百泉 王占国 侯洵 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第12期113-116,共4页
Direct-current transfer characteristics of (InGaN)/A1GaN/A1N/GaN heterojunction field effect transistors (HFETs) are presented. A drain current plateau (IDs = 32.0 mA/mm) for Vcs swept from +0.7 V to -0. 6 V is... Direct-current transfer characteristics of (InGaN)/A1GaN/A1N/GaN heterojunction field effect transistors (HFETs) are presented. A drain current plateau (IDs = 32.0 mA/mm) for Vcs swept from +0.7 V to -0. 6 V is present in the transfer characteristics of InGaN/AIGaN/AIN/GaN HFETs. The theoretical calculation shows the coexistence of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) in InGaN/AIGaN/A1N/GaN heterostructures, and the screening effect of 2DHG to the 2DEG in the conduction channel can explain this current plateau. Moreover, the current plateau shows the time-dependent behavior when IDs Vcs scans repeated are conducted. The obtained insight provides indication for the design in the fabrication of GaN-based super HFETs. 展开更多
关键词 Algan Observation of a Current Plateau in the Transfer Characteristics of Ingan/Algan/aln/gan Heterojunction Field Effect Transistors INgan aln
下载PDF
上一页 1 2 5 下一页 到第
使用帮助 返回顶部