通过热力学理论对物理气相传输(PVT)法AlN晶体生长过饱和度进行分析,分别从软件模拟和晶体生长实验对衬底表面的温度分布进行调控,进而控制衬底表面AlN晶体生长的驱动力。理论上,采用Comsol模拟软件对坩埚结构的温度分布进行模拟仿真,...通过热力学理论对物理气相传输(PVT)法AlN晶体生长过饱和度进行分析,分别从软件模拟和晶体生长实验对衬底表面的温度分布进行调控,进而控制衬底表面AlN晶体生长的驱动力。理论上,采用Comsol模拟软件对坩埚结构的温度分布进行模拟仿真,模拟结果表明:复合型衬底可以显著改变衬底表面的温度分布,达到改变衬底表面AlN气氛的过饱和度的目的;实验上,采用PVT法AlN晶体的生长实验验证了软件模拟结果。采用复合型衬底生长AlN晶体时,通过对衬底表面的温度分布调控可有效控制晶体生长驱动力,进而实现形核位置和形核数量的控制。经过6~8 h AlN晶体生长后,可获得尺寸约为12 mm、厚度约为3 mm的AlN单晶。喇曼光谱和XRD双晶摇摆曲线测试结果表明晶体质量良好。展开更多
mm SiC films with high electrical uniformity a re grown on Si(111) by a newly developed vertical low-pressure chemical vapor dep osition (LPCVD) reactor.Both in-situ n- and p-type doping of 3C-SiC are achi eved by in...mm SiC films with high electrical uniformity a re grown on Si(111) by a newly developed vertical low-pressure chemical vapor dep osition (LPCVD) reactor.Both in-situ n- and p-type doping of 3C-SiC are achi eved by intentional introduction of ammonia and boron into the precursor gases.T he dependence of growth rate and surface morphology on the C/Si ratio and optimi zed growth conditions is obtained.The best electrical uniformity of 50mm 3C-SiC films obtained by non-contact sheet resistance measurement is ±2.58%.GaN fil ms are grown atop the as-grown 3C-SiC/Si(111) layers using molecular beam epit axy (MBE).The data of both X-ray diffraction and low temperature photoluminesc e nce of GaN/3C-SiC/Si(111) show that 3C-SiC is an appropriate substrate or buff er layer for the growth of Ⅲ-nitrides on Si substrates with no cracks.展开更多
文摘通过热力学理论对物理气相传输(PVT)法AlN晶体生长过饱和度进行分析,分别从软件模拟和晶体生长实验对衬底表面的温度分布进行调控,进而控制衬底表面AlN晶体生长的驱动力。理论上,采用Comsol模拟软件对坩埚结构的温度分布进行模拟仿真,模拟结果表明:复合型衬底可以显著改变衬底表面的温度分布,达到改变衬底表面AlN气氛的过饱和度的目的;实验上,采用PVT法AlN晶体的生长实验验证了软件模拟结果。采用复合型衬底生长AlN晶体时,通过对衬底表面的温度分布调控可有效控制晶体生长驱动力,进而实现形核位置和形核数量的控制。经过6~8 h AlN晶体生长后,可获得尺寸约为12 mm、厚度约为3 mm的AlN单晶。喇曼光谱和XRD双晶摇摆曲线测试结果表明晶体质量良好。
文摘mm SiC films with high electrical uniformity a re grown on Si(111) by a newly developed vertical low-pressure chemical vapor dep osition (LPCVD) reactor.Both in-situ n- and p-type doping of 3C-SiC are achi eved by intentional introduction of ammonia and boron into the precursor gases.T he dependence of growth rate and surface morphology on the C/Si ratio and optimi zed growth conditions is obtained.The best electrical uniformity of 50mm 3C-SiC films obtained by non-contact sheet resistance measurement is ±2.58%.GaN fil ms are grown atop the as-grown 3C-SiC/Si(111) layers using molecular beam epit axy (MBE).The data of both X-ray diffraction and low temperature photoluminesc e nce of GaN/3C-SiC/Si(111) show that 3C-SiC is an appropriate substrate or buff er layer for the growth of Ⅲ-nitrides on Si substrates with no cracks.
