icrostructure and mechanical properties of Al_4C_3 and Al_2O_3 dispersion strengthened aluminum composite fabricated by mechanical attrition and hotpressing consolidation method were studied. It was shown that fine we...icrostructure and mechanical properties of Al_4C_3 and Al_2O_3 dispersion strengthened aluminum composite fabricated by mechanical attrition and hotpressing consolidation method were studied. It was shown that fine well developed Al_4C_3 stick and equiaxed γAl_2O_3 dispersoids with total content of about 6.6 v% uniformly distributed within the Al grains or along the grain boundaries. The Al/Al_4C_3 and Al/Al_2O_3 interfaces are very clean and well bonded at atomic level, but have no fixed orientation relationships between the dispersoids and the aluminum matrix exists. At ambient and especially elevated temperatures, strength and stiffness of the composite are much higher than that of P/M Al and even better than that of the 15 v% SiCw/Al composite.展开更多
Resin-bonded Al-SiC composite was sintered at 1100,1300,and 1500℃ in the air,the oxidation mechanism was investigated.The reaction models were also established.The oxidation resistance of the Al-SiC composite was sig...Resin-bonded Al-SiC composite was sintered at 1100,1300,and 1500℃ in the air,the oxidation mechanism was investigated.The reaction models were also established.The oxidation resistance of the Al-SiC composite was significantly enhanced with temperature increase.SiC in the exterior of the composite was partially oxidized slightly,while the transformation of metastable Al_(4)C_(3) to stable Al_(4)SiC_(4) existed in the interior.At 1100℃,Al in the interior reacted with residual C to form Al_(4)C_(3).With increasing to 1300℃,high temperature and low oxygen partial pressure lead to active oxidation of SiC,and internal gas composition transforms to Al_(2)O(g)+CO(g)+SiO(g)as the reaction proceeds.After Al_(4)C_(3) is formed,CO(g)and SiO(g)are continuously deposited on its surface,transforming to Al_(4)SiC_(4).At 1500℃,a dense layer consisting of SiC and Al_(4)SiC_(4) whiskers is formed which cuts off the diffusion channel of oxygen.The active oxidation of SiC is accelerated,enabling more gas to participate in the synthesis of Al_(4)SiC_(4),eventually forming hexagonal lamellar Al_(4)SiC_(4) with mutual accumulation between SiC particles.Introducing Al enhances the oxidation resistance of SiC.In addition,the in situ generated non-oxide is uniformly dispersed on a micro-scale and bonds SiC stably.展开更多
文摘icrostructure and mechanical properties of Al_4C_3 and Al_2O_3 dispersion strengthened aluminum composite fabricated by mechanical attrition and hotpressing consolidation method were studied. It was shown that fine well developed Al_4C_3 stick and equiaxed γAl_2O_3 dispersoids with total content of about 6.6 v% uniformly distributed within the Al grains or along the grain boundaries. The Al/Al_4C_3 and Al/Al_2O_3 interfaces are very clean and well bonded at atomic level, but have no fixed orientation relationships between the dispersoids and the aluminum matrix exists. At ambient and especially elevated temperatures, strength and stiffness of the composite are much higher than that of P/M Al and even better than that of the 15 v% SiCw/Al composite.
基金supported by the National Key Research and Development Program of China(No.2021YFB3701400).
文摘Resin-bonded Al-SiC composite was sintered at 1100,1300,and 1500℃ in the air,the oxidation mechanism was investigated.The reaction models were also established.The oxidation resistance of the Al-SiC composite was significantly enhanced with temperature increase.SiC in the exterior of the composite was partially oxidized slightly,while the transformation of metastable Al_(4)C_(3) to stable Al_(4)SiC_(4) existed in the interior.At 1100℃,Al in the interior reacted with residual C to form Al_(4)C_(3).With increasing to 1300℃,high temperature and low oxygen partial pressure lead to active oxidation of SiC,and internal gas composition transforms to Al_(2)O(g)+CO(g)+SiO(g)as the reaction proceeds.After Al_(4)C_(3) is formed,CO(g)and SiO(g)are continuously deposited on its surface,transforming to Al_(4)SiC_(4).At 1500℃,a dense layer consisting of SiC and Al_(4)SiC_(4) whiskers is formed which cuts off the diffusion channel of oxygen.The active oxidation of SiC is accelerated,enabling more gas to participate in the synthesis of Al_(4)SiC_(4),eventually forming hexagonal lamellar Al_(4)SiC_(4) with mutual accumulation between SiC particles.Introducing Al enhances the oxidation resistance of SiC.In addition,the in situ generated non-oxide is uniformly dispersed on a micro-scale and bonds SiC stably.
