作为全固态微光器件,In x Ga1-x As器件通过调节材料组分x值,其响应波段覆盖夜天光辐射的主要波段,对夜天光的能量利用率高。加之材料量子效率高,器件性能好,可望显著提高夜视系统作战距离;另外,采用半导体常规工艺制作,可完成大面阵、...作为全固态微光器件,In x Ga1-x As器件通过调节材料组分x值,其响应波段覆盖夜天光辐射的主要波段,对夜天光的能量利用率高。加之材料量子效率高,器件性能好,可望显著提高夜视系统作战距离;另外,采用半导体常规工艺制作,可完成大面阵、长线列器件制备,无需封装在(超)高真空系统,制备简单;采用CMOS读出电路进行信号数据的读取、传输与放大,有利于进行数据的处理和优化改善。由于具备的以上技术优势,In x Ga1-x As器件成为一种新型的高性能全固态数字化微光器件。In x Ga1-x As器件与传统的微光器件在光电转换原理以及器件制备方面存在不同,决定了两者在性能上存在的差异。文中对此进行了对比分析,分析结果体现了In x Ga1-x As全固态数字化微光器件的技术优势和特点,以及In x Ga1-x As全固态数字化微光器件存在的重要应用和发展需求。展开更多
The electronic band structure of GaxIn1-xAs alloy is calculated by using the local empirical pseudo-potential method including the effective disorder potential in the virtual crystal approximation. The compositional e...The electronic band structure of GaxIn1-xAs alloy is calculated by using the local empirical pseudo-potential method including the effective disorder potential in the virtual crystal approximation. The compositional effect of the electronic energy band structure of this alloy is studied with composition x ranging from 0 to 1. Various physical quantities such as band gaps, bowing parameters, refractive indices, and high frequency dielectric constants of the considered alloys with different Ga concentrations are calculated. The effects of both temperature and hydrostatic pressure on the calculated quantities are studied. The obtained results are found to be in good agreement with the available experimental and published data.展开更多
Ternary In-rich AlxIn1-x N films were successfully grown on Si （111） and （0001） sapphire substrates by radio-frequency magnetron sputtering on a relatively Al-rich AlxIn1-x N layer after AlN buffer. X-ray diffract...Ternary In-rich AlxIn1-x N films were successfully grown on Si （111） and （0001） sapphire substrates by radio-frequency magnetron sputtering on a relatively Al-rich AlxIn1-x N layer after AlN buffer. X-ray diffraction （XRD） patterns of the films indicate highly c axis-oriented wurtzite structure and the indium content of about 0.76 has been evaluated according to the Vegard＇s law. An Al-rich AlxIn1-xN transition layer was formed between the ultimate In-rich AlxIn1-x N film and the AlN buffer, which served as a further buffer to alleviate mismatch. X-ray photoelectron spectroscopy （XPS） depth profiling analyses confirm the alternative of indium and aluminum composition and the unavoidable oxygen impurities from surface to bulk. Owing to high indium content, obvious E2u and InN-like Al （LO） phonon model accompanying with slight A1N-like A1 （LO） phonon model are observed. Hall effect measurements demonstrate n-type electrical conductivity in these alloys with carrier concentrations n=1019 cm-3. The strain in In-rich AlxIn1-x N films can be significantly reduced by introducing an Al-rich interlayer, facilitating the improvement of film quality for diverse device applications.展开更多
文摘作为全固态微光器件,In x Ga1-x As器件通过调节材料组分x值,其响应波段覆盖夜天光辐射的主要波段,对夜天光的能量利用率高。加之材料量子效率高,器件性能好,可望显著提高夜视系统作战距离;另外,采用半导体常规工艺制作,可完成大面阵、长线列器件制备,无需封装在(超)高真空系统,制备简单;采用CMOS读出电路进行信号数据的读取、传输与放大,有利于进行数据的处理和优化改善。由于具备的以上技术优势,In x Ga1-x As器件成为一种新型的高性能全固态数字化微光器件。In x Ga1-x As器件与传统的微光器件在光电转换原理以及器件制备方面存在不同,决定了两者在性能上存在的差异。文中对此进行了对比分析,分析结果体现了In x Ga1-x As全固态数字化微光器件的技术优势和特点,以及In x Ga1-x As全固态数字化微光器件存在的重要应用和发展需求。
文摘The electronic band structure of GaxIn1-xAs alloy is calculated by using the local empirical pseudo-potential method including the effective disorder potential in the virtual crystal approximation. The compositional effect of the electronic energy band structure of this alloy is studied with composition x ranging from 0 to 1. Various physical quantities such as band gaps, bowing parameters, refractive indices, and high frequency dielectric constants of the considered alloys with different Ga concentrations are calculated. The effects of both temperature and hydrostatic pressure on the calculated quantities are studied. The obtained results are found to be in good agreement with the available experimental and published data.
基金Supported by the 863 High-Technology Research and Development Program of China(No.2009AA03Z442)the National Natural Science Foundation of China(No.61077074)the Science and Technology Department of Jilin Province(No.20090422)
文摘Ternary In-rich AlxIn1-x N films were successfully grown on Si （111） and （0001） sapphire substrates by radio-frequency magnetron sputtering on a relatively Al-rich AlxIn1-x N layer after AlN buffer. X-ray diffraction （XRD） patterns of the films indicate highly c axis-oriented wurtzite structure and the indium content of about 0.76 has been evaluated according to the Vegard＇s law. An Al-rich AlxIn1-xN transition layer was formed between the ultimate In-rich AlxIn1-x N film and the AlN buffer, which served as a further buffer to alleviate mismatch. X-ray photoelectron spectroscopy （XPS） depth profiling analyses confirm the alternative of indium and aluminum composition and the unavoidable oxygen impurities from surface to bulk. Owing to high indium content, obvious E2u and InN-like Al （LO） phonon model accompanying with slight A1N-like A1 （LO） phonon model are observed. Hall effect measurements demonstrate n-type electrical conductivity in these alloys with carrier concentrations n=1019 cm-3. The strain in In-rich AlxIn1-x N films can be significantly reduced by introducing an Al-rich interlayer, facilitating the improvement of film quality for diverse device applications.
