期刊文献+
共找到50篇文章
< 1 2 3 >
每页显示 20 50 100
Solid-phase Crystallization of Amorphous Silicon Films by Rapid Thermal Annealing 被引量:5
1
作者 JINRui-min LUJing-xiao LIRui WANGHai-yan FENGTuan-hui 《Semiconductor Photonics and Technology》 CAS 2005年第1期37-39,共3页
The morphous silicon films prepared by PECVD at substrate temperatures of 30℃ have been crystallized by rapid thermal annealing method, the budget of time-temperature in the annealing process is 600℃ for 120s, 850℃... The morphous silicon films prepared by PECVD at substrate temperatures of 30℃ have been crystallized by rapid thermal annealing method, the budget of time-temperature in the annealing process is 600℃ for 120s, 850℃ for 120s, and 950℃ for 120s. The results indicate the crystallization at 850℃ and 950℃ are better as shown in micro-Raman scattering and scanning electronic microscope. 展开更多
关键词 amorphous silicon solid-phase crystallization rapid thermal annealing
下载PDF
Semi-quantitative study on the Staebler-Wronski effect of hydrogenated amorphous silicon films prepared with HW-ECR-CVD system 被引量:2
2
作者 丁毅 刘国汉 +5 位作者 陈光华 贺德衍 朱秀红 张文理 田凌 马占杰 《Chinese Physics B》 SCIE EI CAS CSCD 2006年第4期813-817,共5页
The method of numerical simulation is used to fit the relationship between the photoconductivity in films and the illumination time. The generation and process rule of kinds of different charged defect states during i... The method of numerical simulation is used to fit the relationship between the photoconductivity in films and the illumination time. The generation and process rule of kinds of different charged defect states during illumination are revealed. It is found surprisingly that the initial photoconductivity determines directly the total account of photoconductivity degradation of sample. 展开更多
关键词 hydrogenated amorphous silicon Staebler-Wronski effect microwave electron cyclotronresonant chemical vapour deposition charged defects
下载PDF
Study on stability of hydrogenated amorphous silicon films 被引量:2
3
作者 朱秀红 陈光华 +5 位作者 张文理 丁毅 马占洁 胡跃辉 何斌 荣延栋 《Chinese Physics B》 SCIE EI CAS CSCD 2005年第11期2348-2351,共4页
Hydrogenated amorphous silicon (a-Si:H) films with high and same order of magnitude photosensitivity (-10^5) but different stability were prepared by using microwave electron cyclotron resonance chemical vapour d... Hydrogenated amorphous silicon (a-Si:H) films with high and same order of magnitude photosensitivity (-10^5) but different stability were prepared by using microwave electron cyclotron resonance chemical vapour deposition system under the different deposition conditions. It was proposed that there was no direct correlation between the photosensitivity and the hydrogen content (CH) as well as H-Si bonding configurations, but for the stability, they were the critical factors. The experimental results indicated that higher substrate temperature, hydrogen dilution ratio and lower deposition rate played an important role in improving the microstructure of a-Si:H films. We used hydrogen elimination model to explain our experimental results. 展开更多
关键词 hydrogenated amorphous silicon (a-Si:H) films PHOTOSENSITIVITY STABILITY microstructure hydrogen elimination (HE) model
下载PDF
Surface plasmon enhanced photoluminescence in amorphous silicon carbide films by adjusting Ag island film sizes 被引量:2
4
作者 于威 王新占 +3 位作者 戴万雷 路万兵 刘玉梅 傅广生 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第5期532-535,共4页
Ag island films with different sizes are deposited on hydrogenated amorphous silicon carbide (a-SiC:H) films, and the influences of Ag island films on the optical properties of the tx-SiC:H films are investigated.... Ag island films with different sizes are deposited on hydrogenated amorphous silicon carbide (a-SiC:H) films, and the influences of Ag island films on the optical properties of the tx-SiC:H films are investigated. Atomic force microscope images show that Ag nanoislands are formed after Ag coating, and the size of the Ag islands increases with increasing Ag deposition time. The extinction spectra indicate that two resonance absorption peaks which correspond to out-of-plane and in-plane surface plasmon modes of the Ag island films are obtained, and the resonance peak shifts toward longer wavelength with increasing Ag island size. The photoluminescence (PL) enhancement or quenching depends on the size of Ag islands, and PL enhancement by 1.6 times on the main PL band is obtained when the sputtering time is 10 min. Analyses show that the influence of surface plasmons on the PL of a-SiC:H is determined by the competition between the scattering and absorption of Ag islands, and PL enhancement is obtained when scattering is the main interaction between the Ag islands and incident light. 展开更多
关键词 amorphous silicon carbide surface plasmons photoluminescence enhancement
下载PDF
Smooth Surface Morphology of Hydrogenated Amorphous Silicon Film Prepared by Plasma Enhanced Chemical Vapor Deposition 被引量:1
5
作者 闫许 冯飞 +1 位作者 张进 王跃林 《Plasma Science and Technology》 SCIE EI CAS CSCD 2009年第5期569-575,共7页
Influence of the parameters of plasma enhanced chemical vapor deposition (PECVD) on the surface morphology of hydrogenated amorphous silicon (α-Si:H) film was investigated. The root-mean-square (RMS) roughness... Influence of the parameters of plasma enhanced chemical vapor deposition (PECVD) on the surface morphology of hydrogenated amorphous silicon (α-Si:H) film was investigated. The root-mean-square (RMS) roughness of the film was measured by atomic force microscope (AFM) and the relevant results were analyzed using the surface smoothing mechanism of film deposition. It is shown that an α-Si:H film with smooth surface morphology can be obtained by increasing the PH3/N2 gas flow rate for 10% in a high frequency (HF) mode. For high power, however, the surface morphology of the film will deteriorate when the Sill4 gas flow rate increases. Furthermore, optimized parameters of PECVD for growing the film with smooth surface were obtained to be Sill4:25 sccm (standard cubic centimeters per minute), At: 275 sccm, 10%PH3/N2:2 sccm, HF power: 15 W, pressure: 0.9 Torr and temperature: 350℃. In addition, for in thick fihn deposition on silicon substrate, a N20 and NH3 preprocessing method is proposed to suppress the formation of gas bubbles. 展开更多
关键词 hydrogenated amorphous silicon film surface roughness plasma enhancedchemical vapor deposition
下载PDF
History of the Amorphous Silicon on Crystalline Silicon Heterojunction Solar Cell 被引量:1
6
作者 H.C. Neitzert W.R. Fahrner 《Journal of Energy and Power Engineering》 2011年第3期222-226,共5页
Some commercially available solar panels with very high efficiencies for terrestrial photovoltaic applications are based on the amorphous silicon on crystalline silicon material system. This type ofheterostructure has... Some commercially available solar panels with very high efficiencies for terrestrial photovoltaic applications are based on the amorphous silicon on crystalline silicon material system. This type ofheterostructure has more than 40 years' old history. The early development of the technology and the results, obtained in the last years with this type of solar cell are reviewed. In particular it is demonstrated why the physical understanding of the interface properties and band-structure was important for the development of high efficiency solar cells. 展开更多
关键词 HISTORY solar cell amorphous silicon crystalline silicon heterojunction.
下载PDF
Spatially-Resolved Crystallization of Amorphous Silicon Films on the Glass Substrate by Multi-beam Laser Interference
7
作者 Zhongfan LIU Xuede YUAN +1 位作者 Xue HAO F.Muecklich 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2007年第4期465-467,共3页
Laser interference induced crystallization of amorphous silicon (a-Si) on the glass substrate was performed using a Q-switched Nd:YAG (yttrium aluminum garnet) laser. White light interferometer (WLI) and atomic... Laser interference induced crystallization of amorphous silicon (a-Si) on the glass substrate was performed using a Q-switched Nd:YAG (yttrium aluminum garnet) laser. White light interferometer (WLI) and atomic force microscope (AFM) were used to characterize the morphology of the structured films, while X-ray diffraction (XRD), combined with the AFM, was used to analyse the crystalline structure of the film. The experimental results show that the laser energy density above a certain threshold, in the range of 400-500 mJ/cm2,triggers the patterned crystallizations which take the form similar to the laser intensity distribution. For the patterned crystallization under multipulse exposure, a definite polycrystalline structure with individual phases was observed by XRD. The difference in feature form, e.g., deepened craters or heightened lines, is related to the laser energy density relative to the threshold of evaporation of the material. 展开更多
关键词 Pulsed laser Laser interference amorphous silicon CRYSTALLIZATION
下载PDF
Interface states study of intrinsic amorphous silicon for crystalline silicon surface passivation in HIT solar cell
8
作者 肖友鹏 魏秀琴 周浪 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第4期489-493,共5页
Intrinsic hydrogenated amorphous silicon(a-Si:H) film is deposited on n-type crystalline silicon(c-Si) wafer by hotwire chemical vapor deposition(HWCVD) to analyze the amorphous/crystalline heterointerface pass... Intrinsic hydrogenated amorphous silicon(a-Si:H) film is deposited on n-type crystalline silicon(c-Si) wafer by hotwire chemical vapor deposition(HWCVD) to analyze the amorphous/crystalline heterointerface passivation properties.The minority carrier lifetime of symmetric heterostructure is measured by using Sinton Consulting WCT-120 lifetime tester system,and a simple method of determining the interface state density(D_(it)) from lifetime measurement is proposed.The interface state density(D_(it)) measurement is also performed by using deep-level transient spectroscopy(DLTS) to prove the validity of the simple method.The microstructures and hydrogen bonding configurations of a-Si:H films with different hydrogen dilutions are investigated by using spectroscopic ellipsometry(SE) and Fourier transform infrared spectroscopy(FTIR) respectively.Lower values of interface state density(D_(it)) are obtained by using a-Si:H film with more uniform,compact microstructures and fewer bulk defects on crystalline silicon deposited by HWCVD. 展开更多
关键词 amorphous silicon MICROSTRUCTURE hydrogen bonding configurations interface state density
下载PDF
Room Temperature Growth of Hydrogenated Amorphous Silicon Films by Dielectric Barrier Discharge Enhanced CVD
9
作者 郭玉 张溪文 韩高荣 《Plasma Science and Technology》 SCIE EI CAS CSCD 2007年第2期177-180,共4页
Hydrogenated amorphous silicon (a-Si: H) films were deposited on Si (100) and glass substrates by dielectric barrier discharge enhanced chemical vapour deposition (DBD-CVD) in (SiH4+H2) atmosphere at room te... Hydrogenated amorphous silicon (a-Si: H) films were deposited on Si (100) and glass substrates by dielectric barrier discharge enhanced chemical vapour deposition (DBD-CVD) in (SiH4+H2) atmosphere at room temperature. Results of the thickness measurement, SEM (scanning electron microscope), Raman, and FTIR (Fourier transform infrared spectroscopy) show that with the increase in the applied peak voltage, the deposition rate and network order of the films increase, and the hydrogen bonding configurations mainly in di-hydrogen (Si-H2) and poly hydrogen (SiH2)n are introduced into the films. The UV-visible transmission spectra show that with the decrease in SiH4/ (SiHn+H2) the thin films' band gap shifts from 1.92 eV to 2.17 eV. These experimental results are in agreement with the theoretic analysis of the DBD discharge. The deposition of a-Si: H films by the DBD-CVD method as reported here for the first time is attractive because it allows fast deposition of a-Si: H films on large-area low-melting-point substrates and requires only a low cost of production without additional heating or pumping equipment. 展开更多
关键词 DBD-CVD room temperature hydrogenated amorphous silicon films
下载PDF
2H-SiC Dendritic Nanocrystals In Situ Formation from Amorphous Silicon Carbide under Electron Beam Irradiation
10
作者 Li Xianxiang Hu Xiaobo +3 位作者 Jiang Shouzheng Dong Jie Xu Xiangang Jiang Minhua 《Journal of Rare Earths》 SCIE EI CAS CSCD 2006年第z1期54-55,共2页
Under electron beam irradiation,the in-situ formation of 2H-SiC dentritic nanocrystals from amorphous silicon carbide at room temperature was observed.The homogenous transition mainly occurs at the thin edge and on th... Under electron beam irradiation,the in-situ formation of 2H-SiC dentritic nanocrystals from amorphous silicon carbide at room temperature was observed.The homogenous transition mainly occurs at the thin edge and on the surface of specimen where the energy obtained from electron beam irradiation is high enough to cause the amorphous crystallizing into 2H-SiC. 展开更多
关键词 electron beam irradiation 2H-SiC dendritic nanocrystal amorphous silicon carbide
下载PDF
Analysis of the application of the laser equipment in the production line of the amorphous silicon film solar cells
11
作者 Huang Xinhua Mei Lixue 《International English Education Research》 2014年第4期8-10,共3页
The laser equipment is one of the key equipment in the production line of the solar energy. In this article, the author de-scribes the application of the laser equipment in the production line of the amorphous silicon... The laser equipment is one of the key equipment in the production line of the solar energy. In this article, the author de-scribes the application of the laser equipment in the production line of the amorphous silicon film solar cells, and points out that the stable and exactitude is the key direction of the future development of the laser scribing equipment. 展开更多
关键词 Laser equipment TCO thin film PECVD amorphous silicon thin film solar cell
下载PDF
Significant“smaller is softer”in amorphous silicon via irradiation-me diate d surface modification 被引量:1
12
作者 Yuecun Wang Lin Tian +1 位作者 Meng Li Zhiwei Shan 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2023年第35期106-112,共7页
“Smaller is softer”is a reverse size dependence of strength,defying the“smaller is stronger”tenet.It usually results from surface-mediated displacive or diffusive deformation and is mainly found in some ultra-smal... “Smaller is softer”is a reverse size dependence of strength,defying the“smaller is stronger”tenet.It usually results from surface-mediated displacive or diffusive deformation and is mainly found in some ultra-small-scale(below tens of nanometers)metallic materials.Here,making use of the surface modifi-cation via ion beam irradiation,we bring the“smaller is softer”into being in a covalently-bonded,hard,and brittle material-amorphous Si(a-Si)at a much larger size regime(<∼500 nm).It is manifested as the transition from the quasi-brittle failure to the homogeneous plastic deformation as well as the de-creasing yield stress with sample volume reduction at the submicron-scale regime.An analytical model of hard core/superplastic shell has been proposed to explain the artificially-controllable size-dependent softening.This surface engineering pathway via ion irradiation is not only of particular interest to tai-lor the strength and deformation behaviors in small-sized a-Si or other covalently-bonded amorphous solids but also of practical relevance to the utility of a-Si in microelectronics and microelectromechanical systems. 展开更多
关键词 amorphous silicon Micropillars “Smaller is softer” Ion irradiation
原文传递
Toward an Optimum Design of an Amorphous Silicon Photovoltaic/Thermal System:Simulation and Experiments
13
作者 REN Xiao LI Jing +3 位作者 LIU Weixin ZHU Chuanyong PEI Gang GONG Liang 《Journal of Thermal Science》 SCIE EI CAS CSCD 2023年第3期947-964,共18页
Amorphous silicon photovoltaic/thermal(a-Si-PV/T)technology is promising due to the low power temperature coefficient,thin-film property,thermal annealing effect of the solar cells,and high conversion efficiency in su... Amorphous silicon photovoltaic/thermal(a-Si-PV/T)technology is promising due to the low power temperature coefficient,thin-film property,thermal annealing effect of the solar cells,and high conversion efficiency in summer.The design of a-Si-PV/T system is influenced by a number of thermodynamic,structural,and external parameters.Parametric analysis is useful for a good design of the system.A dynamic distributed parameter model is built and verified in this paper.Outdoor tests are carried out.The impacts of operating temperature,mass flow rate,cover ratio of solar cells,heat transfer area,and frame shadow ratio on its performance are theoretically and experimentally investigated.The results indicate that seven or eight copper tubes are suitable to achieve a high overall efficiency of the a-Si-PV/T system.The frame and tilt angle shall avoid a shadow ratio of more than 8.3%during operation.The difference between power outputs at operating temperatures of 35℃and55℃in the first month is about 0.21%while it drops to less than 0.1%in the twelfth month.Compared with conventional PVT systems,the a-Si-PV/T system benefits from a higher design temperature with a minor efficiency decrement. 展开更多
关键词 amorphous silicon cell photovoltaic thermal system parametric analysis distributed parameter model frame shadow
原文传递
Properties of boron doped ZnO films prepared by reactive sputtering method: Application to amorphous silicon thin film solar cells 被引量:6
14
作者 Sukanta Bose Sourav Mandal +1 位作者 Asok K.Barua Sumita Mukhopadhyay 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2020年第20期136-143,共8页
Reactive sputtered boron-doped zinc oxide(BZO) film was deposited from argon,hydrogen and boron gas mixture.The reactive sputtering technique provides us the flexibility of changing the boron concentration in the prod... Reactive sputtered boron-doped zinc oxide(BZO) film was deposited from argon,hydrogen and boron gas mixture.The reactive sputtering technique provides us the flexibility of changing the boron concentration in the produced films by using the same intrinsic zinc oxide target.Textured surface was obtained in the as-deposited films.The surface morphology and the opto-electronic properties of the films can be controlled by simply varying the gas concentration ratio.By varying the gas concentration ratio,the best obtained resistivity ~6.51×10^-4Ω-cm,mobility ~19.05 cm^2 V^-1 s^-1 and sheet resistance ~7.23Ω/□ were obtained.At lower wavelength of light,the response of the deposited films improves with the increase of boron in the gas mixture and the overall transmission in the wavelength region 350-1100 nm of all the films are>85 %.We also fabricated amorphous silicon(a-Si) thin film solar cell on the best obtained BZO layers.The overall efficiency of the a-Si solar cell is 8.14 %,found on optimized BZO layer. 展开更多
关键词 Magnetron reactive sputtering BZO amorphous silicon Solar cells Zinc oxide(ZnO)
原文传递
Effect of Additives on the Sintering of Amorphous Nano-sized Silicon Nitride Powders 被引量:3
15
作者 骆俊廷 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2009年第4期537-539,共3页
Amorphous nano-sized silicon nitride powders were sintered by liquid phase sintering. The influences of the additives of Y2O3 and Al2O3 prepared by two different ways, the polyacrylamide gel method and the precipitati... Amorphous nano-sized silicon nitride powders were sintered by liquid phase sintering. The influences of the additives of Y2O3 and Al2O3 prepared by two different ways, the polyacrylamide gel method and the precipitation method, were investigated. The grain sizes of the additives prepared by the first method were finer than those of prepared by the latter method. When sintered at the same temperature, 1700 ℃, the average grain size of the silicon nitride is 0.3 um for the sample with the former additives, which is much finer than the one with the latter additives. The density of additives prepared by precipitation method is clearly lower than those of prepared by polyacrylamide gel method. 展开更多
关键词 amorphous silicon nitride liquid phase sintering ADDITIVES
下载PDF
Open-circuit voltage analysis of p-i-n type amorphous silicon solar cells deposited at low temperature 被引量:1
16
作者 Ni Jian Zhang Jian-Jun Cao Yu Wang Xian-Bao Li Chao Chen Xin-Liang Geng Xin-Hua Zhao Ying 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第8期403-407,共5页
This paper identifies the contributions of p-a-SiC:H layers and i-a-Si:H layers to the open circuit voltage of p-i-n type a-Si:H solar cells deposited at a low temperature of 125℃. We find that poor quality p-a-Si... This paper identifies the contributions of p-a-SiC:H layers and i-a-Si:H layers to the open circuit voltage of p-i-n type a-Si:H solar cells deposited at a low temperature of 125℃. We find that poor quality p-a-SiC:H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely. A significant improvement in open circuit voltage has been obtained by using high quality p-~SiC:H films optimized at the "low-power regime" under low silane flow rates and high hydrogen dilution conditions. 展开更多
关键词 amorphous silicon solar cell low temperature open-circuit voltage
下载PDF
Influence of using amorphous silicon stack as front heterojunction structure on performance of interdigitated back contact-heterojunction solar cell (IBC-HJ) 被引量:1
17
作者 Rui JIA Ke TAO +5 位作者 Qiang LI Xiaowan DAI Hengchao SUN Yun SUN Zhi JIN Xinyu LIU 《Frontiers in Energy》 SCIE CSCD 2017年第1期96-104,共9页
Interdigitated back contact-heterojunction (IBC-HJ) solar cells can have a conversion efficiency of over 25%. However, the front surface passivation and structure have a great influence on the properties of the IBC-... Interdigitated back contact-heterojunction (IBC-HJ) solar cells can have a conversion efficiency of over 25%. However, the front surface passivation and structure have a great influence on the properties of the IBC-HJ solar cell. In this paper, detailed numerical simulations have been performed to investigate the potential of front surface field (FSF) offered by stack of n-type doped and intrinsic amorphous silicon (a-Si) layers on the front surface of IBC-HJ solar cells. Simulations results clearly indicate that the electric field of FSF should be strong enough to repel minority carries and cumulate major carriers near the front surface. However, the overstrong electric field tends to drive electrons into a-Si layer, leading to severe recombination loss. The n-type doped amorphous silicon (n-a-Si) layer has been optimized in terms of doping level and thickness. The optimized intrinsic amorphous silicon (i-a-Si) layer should be as thin as possible with an energy band gap (Es) larger than 1.4 eV. In addition, the simulations concerning interface defects strongly suggest that FSF is essential when the front surface is not passivated perfectly. Without FSF, the IBC-HJ solar cells may become more sensitive to interface defect density. 展开更多
关键词 amorphous silicon front surface field simulations interdigitated back contact-heterojunction solar cells
原文传递
Annealing effect on optical and electronic properties of silicon rich amorphous silicon-carbide films 被引量:1
18
作者 Shuxin LI Yunjun RUI +2 位作者 Yunqing CAO Jun XU Kunji CHEN 《Frontiers of Optoelectronics》 2012年第1期107-111,共5页
A series of Si-rich amorphous silicon carbide (a-SiC:H) thin films were deposited in conventional plasma enhanced chemical vapor deposition system with various gas ratio R = [CH4]/[SiH4]. The microstructural, optic... A series of Si-rich amorphous silicon carbide (a-SiC:H) thin films were deposited in conventional plasma enhanced chemical vapor deposition system with various gas ratio R = [CH4]/[SiH4]. The microstructural, optical and electronic properties of as-deposited films were investigated in this study. It was found that optical band gap was linearly proportional to carbon content in the films and it could be controlled in a range of 1.8-2.4 eV by changing the gas ratio, R. Both dark and photo conductivities in room temperature were decreased with the increasing of carbon content in the films, and the photosensitivity reached as high as 104 for the film with the optical band gap of 1.96 eV. The as-deposited samples were subsequently annealed at the temperatures of 900℃ and 1000℃. The formation of nanocrystalline silicon (nc- Si) dots in amorphous silicon carbide (a-SiC) host matrix was shown. The dark conductivity was enhanced by five orders of magnitude after annealing compared with that of as-deposited films. The result of temperature-dependent conductivity suggested that the property of carrier transport was dominated by conduction process between the extended states. Furthermore, room temperature electroluminescence (EL) was achieved from nc-Si/SiC system and the possible mechanism of radiative recombination mechanism was discussed. 展开更多
关键词 amorphous silicon carbide (a-SiC) opticalband gap photo-conductivity dark conductivity electro-luminescence (EL)
原文传递
Modeling of current–voltage characteristics for dual-gate amorphous silicon thin-film transistors considering deep Gaussian density-of-state distribution
19
作者 秦剑 姚若河 《Journal of Semiconductors》 EI CAS CSCD 2015年第12期97-104,共8页
Accounting for the deep Gaussian and tail exponential distribution of the density of states, a physical approximation for potentials of amorphous silicon thin-film transistors using a symmetric dual gate (sDG a-Si:H... Accounting for the deep Gaussian and tail exponential distribution of the density of states, a physical approximation for potentials of amorphous silicon thin-film transistors using a symmetric dual gate (sDG a-Si:H TFT) has been presented. The proposed scheme provides a complete solution of the potentials at the surface and center of the layer without solving any transcendental equations. A channel current model incorporating features of gate voltage-dependent mobility and coupling factor is derived. We show the parameters required for accurately describing the current-voltage (l-V) characteristics of DG a-Si:H TFT and just how sensitively these parameters affect TFT current. Particularly, the parameters' dependence on the I-V characteristics with respect to the density of deep state and channel thickness has been investigated in detail. The resulting scheme and model are successively verified through comparison with numerical simulations as well as the available experimental data. 展开更多
关键词 amorphous silicon thin-film transistor STATES drain current dual gate surface potential density of states Gaussian deep
原文传递
Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition Method
20
作者 ZHONGBoqiang HUANGCixiang 《Semiconductor Photonics and Technology》 CAS 1998年第1期31-35,共5页
Amorphous silicon films are prepared at lower temperature of 350 ℃ by new catalytic chemical vapor deposition method.In the method,material gases (SiH 4 and H 2) are decomposed by catalytic reaction at given temper... Amorphous silicon films are prepared at lower temperature of 350 ℃ by new catalytic chemical vapor deposition method.In the method,material gases (SiH 4 and H 2) are decomposed by catalytic reaction at given temperature,so a-Si films are deposited on substrates.It is found that a-Si films with high quality can be obtain,such as high photosensitivity of 10 6,low spin density of 2.5×10 16 cm -3 . 展开更多
关键词 amorphous silicon Films Catalytic Chemical Vapor Depositon Growth Rate
下载PDF
上一页 1 2 3 下一页 到第
使用帮助 返回顶部