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Au Nanoparticle Formation from Amorphous Au/Si Multilayer
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作者 Masami Aono Takashi Ueda +2 位作者 Hiroshi Abe Shintaro Kobayashi Katsuhiko Inaba 《Journal of Crystallization Process and Technology》 2014年第4期193-205,共13页
By direct observations of transmission electron microscopy (TEM), irreversible morphological transformations of as-deposited amorphous Au/Si multilayer (a-Au/a-Si) were observed on heating. The well arrayed sequence o... By direct observations of transmission electron microscopy (TEM), irreversible morphological transformations of as-deposited amorphous Au/Si multilayer (a-Au/a-Si) were observed on heating. The well arrayed sequence of the multilayer changed to zigzag layered structure at 478 K (=Tzig). Finally, the zigzag structure transformed to Au nanoparticles at 508 K. The distribution of the Au nanoparticles was random within the thin film. In situ X-ray diffraction during heating can clarify partial crystallization Si (c-Si) in the multilayer at 450 K (= ), which corresponds to metal induced crystallization (MIC) from amorphous Si (a-Si) accompanying by Au diffusion. On further heating, a-Au started to crystallize at around 480 K (=Tc) and gradually grew up to 3.2 nm in radius, although the volume of c-Si was almost constant. Continuous heating caused crystal Au (c-Au) melting into liquid AuSi (l-AuSi) at 600 K (= ), which was lower than bulk eutectic temperature ( ). Due to the AuSi eutectic effect, reversible phase transition between liquid and solid occurred once temperature is larger than . Proportionally to the maximum temperatures at each cycles (673, 873 and 1073 K), both and Au crystallization temperature approaches to . Using a thermodynamic theory of the nanoparticle formation in the eutectic system, the relationship between and the nanoparticle size is explained. 展开更多
关键词 amorphous au/si multilayer au NANOPARTICLE Low EUTECTIC Point Metal Induced Crystallization IRREVERsiBLE Morphological Transformation Reversible l-ausi-c-au NANOPARTICLE Phase Transition
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ISOTHERMAL PHASE TRANSFORMATION IN Au-Si AMORPHOUS ALLOY
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作者 Li Songrui Gao Shigu Gao Xiujuan Central-South University of Technology,Changsha,China in revised form 9 April 1987] 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 1989年第8期109-113,共5页
Electric resistivity measurements and X-ray diffraction analysis were performed to study the isothermal phase transformation in amorphous Au-Si ribbons with eutectic composition pre- pared using melt-spinning techniqu... Electric resistivity measurements and X-ray diffraction analysis were performed to study the isothermal phase transformation in amorphous Au-Si ribbons with eutectic composition pre- pared using melt-spinning technique.A series of phase transformations take place spontaneously at room temperature and accelerate at elevated temperatures.Four stages of the transformation from amorphous state to the equilibrium state can be distinguished.Dis- cussion on the structural character of the metastable phases indicates that Hume-Rothery electron compounds and size factor compounds could form during isothermal aging. 展开更多
关键词 au-si amorphous alloy isothermal phase transformation
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Silicon Epitaxial Wafer for X Band Double Read-type DDR IMPATT Diodes by Atmosphere / Low Pressure Growth Technique
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作者 王向武 陆春一 《Rare Metals》 SCIE EI CAS CSCD 1994年第3期211-213,共3页
The silicon epitaxial wafter for X band double Read-type DDR IMPATT diodes has been fabricatedby normal-low pressure growth technique. The hyperabrupt impurity profile and very thin p-layer, n-layerwere achieved.
关键词 si Epitaxy multilayer X band DDR IMPATT Low pressure au-todoping autodilution
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低温非晶硅/金圆片键合技术(英文)
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作者 刘米丰 徐德辉 +1 位作者 熊斌 王跃林 《纳米技术与精密工程》 CAS CSCD 2013年第4期375-378,共4页
本文研究了低温非晶硅/金圆片键合技术.具有不同金硅比的键合片在400℃键合温度和1 MPa键合压力下维持30 min,其键合成功区域均高于94%,平均剪切强度均大于10.1 MPa.键合强度测试结果表明键合成品率与金硅比大小无关,平均剪切强度在10~... 本文研究了低温非晶硅/金圆片键合技术.具有不同金硅比的键合片在400℃键合温度和1 MPa键合压力下维持30 min,其键合成功区域均高于94%,平均剪切强度均大于10.1 MPa.键合强度测试结果表明键合成品率与金硅比大小无关,平均剪切强度在10~20 MPa范围内.微观结构分析表明键合后单晶硅颗粒随机分布在键合层内,而金则充满其他区域,形成了一个无空洞的键合层.无空洞键合层确保不同金硅比非晶硅/金键合片均具有较高的键合强度,可实现非晶硅/金键合技术在圆片键合领域的应用. 展开更多
关键词 圆片键合 非晶硅 微结构分析 键合质量
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