CORROSION BEHAVIOR OF Cu-Nb AND Ni-Nb AMORPHOUS FILMS PREPARED BY ION BEAM ASSISTED DEPOSITION

The Cu25 Nb75 and Ni45Nb55 amorphous films with about 500nm thickness were prepared by ion beam assisted deposition (IBAD). Potentiodynamic polarization measurement was adopted to investigate the corrosion resistance of samples and the tests were carried out respectively in 1mol/L H2SO4 and NaOH aquatic solution. The corrosion performance of the amorphous films was compared with that of multilayered and pure Nb films. Experimental results indicated that the corrosion resistance of amorphous films was better than that of the corresponding multilayers and pure Nb films for both Ni-Nb system with negative heat of formation and Cu-Nb system with positive heat of formation.

Microstructure and properties of hydrophobic films derived from Fe-W amorphous alloy

Amorphous metals are totally different from crystalline metals in regard to atom arrangement. Amorphous metals do not have grain boundaries and weak spots that crystalline materials contain, making them more resistant to wear and corrosion. In this study, amorphous Fe-W alloy films were first prepared by an electroplating method and were then made hydrophobic by modification with a water repellent （heptadecafluoro-1,1,2,2-tetradecyl） trimethoxysilane. Hierarchical micro-nano structures can be obtained by slightly oxidizing the as-deposited alloy, accompanied by phase transformation from amorphous to crystalline during heat treatment. The mi-cro-nano structures can trap air to form an extremely thin cushion of air between the water and the film, which is critical to producing hydrophobicity in the film. Results show that the average values of capacitance, roughness factor, and impedance for specific surface areas of a 600°C heat-treated sample are greater than those of a sample treated at 500°C. Importantly, the coating can be fabricated on various metal substrates to act as a corrosion retardant.

Electron emission degradation of nano-structured sp^2-bonded amorphous carbon films

The initial field electron emission degradation behaviour of original nano-structured sp^2-bonded amorphous carbon films has been observed, which can be attributed to the increase of the work function of the film in the field emission process analysed using a Fowler-Nordheim plot. The possible reason for the change of work function is suggested to be the desorption of hydrogen from the original hydrogen termination film surface due to field emission current-induced local heating. For the explanation of the emission degradation behaviour of the nano-structured sp2-bonded amorphous carbon film, a cluster model with a series of graphite （0001） basal surfaces has been presented, and the theoretical calculations have been performed to investigate work functions of graphite （0001） surfaces with different hydrogen atom and ion chemisorption sites by using first principles method based on density functional theory-local density approximation.

Study on stability of hydrogenated amorphous silicon films

Hydrogenated amorphous silicon （a-Si：H） films with high and same order of magnitude photosensitivity （-10^5） but different stability were prepared by using microwave electron cyclotron resonance chemical vapour deposition system under the different deposition conditions. It was proposed that there was no direct correlation between the photosensitivity and the hydrogen content （CH） as well as H-Si bonding configurations, but for the stability, they were the critical factors. The experimental results indicated that higher substrate temperature, hydrogen dilution ratio and lower deposition rate played an important role in improving the microstructure of a-Si：H films. We used hydrogen elimination model to explain our experimental results.

IN SITU TEM OBSERVATION OF AMORPHOUS Nd_(x)Fe_(1-x)THIN FILMS AND THEIR CRYSTALLIZATION

The room temperature stability and crystallization of amorphous Nd_xFe_(1-x)thin films with x=0.06—0.90,prepared by flash evaporation at 77 K,were investigated by X-ray diffraction and TEM observation.The amorphous Nd_xFe_(1-x)films are stable at room temperature when 0.19<x<0.50.Crystallized phases grow along the surface of film as very thin flakes and become thick only at relatively high temperatures.After complete crystallization,the Nd_xFe_(1-x)films with x<0.50 are composed of Nd_2Fe-(17)and metal Nd,but no NdFe2,a phase expected to occur by phase diagram.

Incorporation of Nitrogen Into Amorphous Carbon Films Produced by Surface-Wave Plasma Chemical Vapor Deposition

In order to study the influence of nitrogen incorporated into amorphous carbon films, nitrogenated amorphous carbon films have been deposited by using surface wave plasma chemical vapor deposition under various ratios of N2/CH4 gas flow. Optical emission spectroscopy has been used to monitor plasma features near the deposition zone. After deposition, the samples are checked by Raman spectroscopy and x-ray photo spectroscopy (XPS). Optical emission intensities of CH and N atom in the plasma are found to be enhanced with the increase in the N2/CH4 gas flow ratio, and then reach their maximums when the N2/CH4 gas flow ratio is 5%. A contrary variation is found in Raman spectra of deposited films. The intensity ratio of the D band to the G band (Id/Ig) and the peak positions of the G and D bands all reach their minimums when the N2/CH4 gas flow ratio is 5%. These show that the structure of amorphous carbon films has been significantly modified by introduction of nitrogen.

Effects of Deposition Temperature on the Properties of Fluorinated Amorphous Carbon Films

Fluorinated amorphous carbon films (a-C:F) were prepared at different temperatures using a microwave electron cyclotron resonance chemical vapor deposition (ECR-CVD) reactor with CHF3 and C2H2 as source gases. Films were annealed at 500℃ in vacuum ambience in order to investigate the relationship of their thermal stability, optical and electrical properties with deposition temperature. Results indicate that the films deposited at high temperature have a less CFX bonding and a more cross-linking structure thus a better thermal stability. They also have a lower bandgap, higher dielectric constant and higher leakage current.

Structural and mechanical properties of amorphous carbon films deposited by the dual plasma technique

Direct current metal filtered cathodic vacuum arc （FCVA） and acetylene gas （C2H2） were wielded to synthesize Ti-containing amorphous carbon films on Si （100）. The influence of substrate bias voltage and acetylene gas on the microstructure and mechanical properties of the films were investigated. The results show that the phase of TiC in the （111） preferential crystallographic orientation exists in the film,and the main existing pattern of carbon is sp2. With increasing the acetylene flow rate,the contents of Ti and TiC phase of the film gradually reduce; however,the thickness of the film increases. When the substrate bias voltage reaches -600 V,the internal stress of the film reaches 1.6 GPa. The micro-hardness and elastic modulus of the film can reach 33.9 and 237.6 GPa,respectively,and the friction coefficient of the film is 0.25.

Room Temperature Growth of Hydrogenated Amorphous Silicon Films by Dielectric Barrier Discharge Enhanced CVD

Hydrogenated amorphous silicon （a-Si： H） films were deposited on Si （100） and glass substrates by dielectric barrier discharge enhanced chemical vapour deposition （DBD-CVD） in （SiH4＋H2） atmosphere at room temperature. Results of the thickness measurement, SEM （scanning electron microscope）, Raman, and FTIR （Fourier transform infrared spectroscopy） show that with the increase in the applied peak voltage, the deposition rate and network order of the films increase, and the hydrogen bonding configurations mainly in di-hydrogen （Si-H2） and poly hydrogen （SiH2）n are introduced into the films. The UV-visible transmission spectra show that with the decrease in SiH4/ （SiHn＋H2） the thin films＇ band gap shifts from 1.92 eV to 2.17 eV. These experimental results are in agreement with the theoretic analysis of the DBD discharge. The deposition of a-Si： H films by the DBD-CVD method as reported here for the first time is attractive because it allows fast deposition of a-Si： H films on large-area low-melting-point substrates and requires only a low cost of production without additional heating or pumping equipment.

THERMAL STABILITY AND PERPENDICULAR ANISOTROPY OF AMORPHOUS TbFeCo FILMS

The perpendicular anisotopy,coercivity and Kerr rotation angle of the amorphous Tb_(32)Fe_(54)Co_(14) films were studied.The X-ray,electron diffraction,XPS and AES profile con- firmed that no obvious change in their amorphous structure and oxygen concentration is ob- served after annealing at 100℃,while their properties alter evidently under bending stress.It seems to be believed that the perpendicular anisotropy in the Tb_(32)Fe_(54)Co_(14) films mainly arises from the induced stress during preparation and the magnetostriction coupling stress,as well as,the thermal instability of the film relates closely to the stress relaxation during annealing.

SHORT-RANGE ORDER STRUCTURES OF Fe-Ge AMORPHOUS THIN FILMS

The short-range order structures of Fe_xGe_(1-x) amorphous thin films,(x=8.7,19.1 and 28.5%)have been studied by means of X-ray absorption spectrum.The nearest neighbors around a Ge or an Fe atom are constituted by two coordinate sub-shells with a very short dis- tance,In two films with lower Fe content,structural parameters of the nearest neighbors around a Ge atom are very near to that in amorphous germanium,and the positions of Fe at- oms are randomly substitutional.But when x=28.5%,some great changes occur on the short-range order structure of a-Fe_xGe_(1-x) film:its structure deviates from continuous ran- dora network and tends toward dense random packing of atoms.Meanwhile,there is a strong- er interaction between near neighboring Fe-Ge atoms in a-Fe_xGe_(1-x) films.

Deposition of Amorphous Carbon Films using ECR Plasma byVarying the Substrate Temperature

Amorphous hydrogenated carbon thin films have been deposited with benzene plasma in an electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition system. The characteristic of Benzene discharge plasma has been monitored by Mast spectrometry. It shows that the majority of the plasma species in the downstream ECR Plasma with benzene as gas source are acetylene, ethylene and higher mass species. In the experiments, the effects of the substrate temperature on the deposition rates have been emphatically studied. The structures of the films were analyzed by FTIR and Ramam spectrum.The results show that when the substrate temperature rises, the deposition rate drops down, the hydrogen Foment decreases, with the higher SP3 content being presented in the film.

Effect of Nickel Distributions Embedded in Amorphous Carbon Films on Transport Properties

Electrical properties of C/Ni films are studied using four mosaic targets made of pure graphite and stripes of nickel with the surface areas of 1.78,3.21,3.92 and 4.64%.The conductivity data in the temperature range of400-500 K shows the extended state conduction.The conductivity data in the temperature range of 150-300 K shows the multi-phonon hopping conduction.The Berthelot-type conduction dominates in the temperature range of 50-150 K.The conductivity of the films in the temperature range about 〈 50 K is described in terms of variable-range hopping conduction.In low temperatures,the localized density of state around Fermi level（F）for the film deposition with 3.92% nickel has a maximum value of about 56.2×10^（17）cm^（-3）eV^（-1） with the minimum average hopping distance of about 3.43 × 10^（-6） cm.

Relative Irradiance Measurement and Bonding Configurations of Amorphous Fluorinated Carbon Films Deposited by Electron Cyclotron Resonance Plasma

a-C:F films are deposited by microwave electron cyclotron resonance (ECR)plasma chemical vapor deposition (CVD) using trifluoromethane (CHF3) and benzene (C6H6) as source gases at different microwave powers. The radicals in plasma originating from source gases dissociation are analyzed by relative irradiance measurement. The bonding configurations and binding state of a-C:F films are measured with Fourier-transformed infrared spectrometer (FTIR) and x-ray photoelectron spectroscopy (XPS). The results show that a-C:F films are mainly composed of CF radical at lower powers but of CF2 radical at higher powers. The deposition of films is related to the radicals generated in plasma and the main bonding configurations are dependent on the ratio of CF to CF2 radicals in films.

ELECTROCHEMICAL PROPERTIES OF THE HYDROGEN ABSORPTION OF AMORPHOUS Ml－Ni ALLOY FILMS

The amorphous Ml-Ni films were prepared by means of ion beam sputtering the electrochemical hydrogen storage,discharge ability and durability of amorphous film electrodes are investigated,The results show that the maximum capacities of the amorphous MlNi_(1.79),MlNi_(2.52),and MlNi_(3.44) samples are 90,100 and 142 mAh/g,respectively,and the MlNi_(3.44) amorphous film does not off and disintegrate into fine particles a fier more than 580 cycles.

Relationship Between Thermal Stability and Optical Bandgap of Fluorinated Amorphous Carbon Films

Fluorinated amorphous carbon films were deposited using microwave electron cyclotron resonance chemical vapor deposition (ECR-CVD) reactor with CF4 and C8H6 as source gas and were annealed in nitrogen ambience for the investigating of their thermal stability .The relative concentration of C=C bond and optical bandgap were obtained by Fourier Transform Infrared (FTIR) spectroscopy and Ultraviolet-Visible (UV-VIS ) spectrum, respectively. It has been demonstrated that there is a close relationship between relative concentration of C=C bond and optical bandgap, and the films deposited at a higher microwave power have a lower optical bandgap and a better thermal stability.

Out-of-Plane Magnetic Anisotropy and Microwave Permeability of Magnetoelastic FeCoSiB Amorphous Thin Films

Theamorphous magnetoelastic Fe66Co17Si1B6 thin films have been deposited by dc magnetron sputtering. A lot of ＂nano-trenches＂ have been observed on the fdm surfaces by AFM. The permeability of amorphous Fe66COlTSilB6 thin films was measured within the frequency range of 0.6GHz-10.2 GHz. The ferromagnetic resonance frequency was found to be 1.2 GHz. MFM shows that the domain of thin film is a maze-type pattern, which indicates that an out-of-plane magnetic anisotropy exists. The out-of-plane anisotropy is believed due to the stress-induced magnetic anisotropy. It can be inferred that the internal stress is tensile stress and normal to the film plane. Index Terms

STRUCTURE AND BINDING STATE OF CN_x FILMS SYNTHESIZED BY FACING TARGETS SPUTTERING

CN x films were made by a facing targets sputtering ( FTS) systemon the Si(100) substrate under different N 2 partial pressure. XRD, XPS, FTIR and Raman Spectroscopy( RS) were measured to investigate the structure and the binding state of the film. The films are amorphous and the N/C increases with the N 2 partial pressure increasing and reaches 0 46 when the N 2 pressure is 100%. The N incorporated C forms N sp 2C and N sp 3C mainly and there is a small amount of C≡N.

THE CRYSTALLIZATION KINETICS OF AN AMORPHOUS Ti-RICHNiTi FILM

The crystallization kinetics of an amorphous Ti-rich NiTi film (Ni 46.34at.%, Ti 53.66at.%)prepared by DC magnetron sputtering was determined by non-isothermal techniques. The activation energy of crystallization and the mean value of the Avrami parameter are 382kJ/mol and 0.85, respectively. The calculated isothermal kinetic curse of amorphous film at 773K coincides with the result of X-ray diffraction.The formation of a Ti2Ni phase is accompanied with the crystallization of Ti-rich NiTi film.

Structural properties of a-SiO_x:H films studied by an improved infrared-transmission analysis method

An improved method of fitting point-by-point is proposed to determine the absorption coefficient from infrared （IR） transmittance. With no necessity of empirical correction factors, the absorption coefficient can be accurately determined for the films with thin thicknesses. Based on this method, the structural properties of the hydrogenated amorphous silicon oxide materials （a-SiOx：H） are investigated. The oxygen-concentration-dependent variation of the Si-O-Si and the Si-H related modes in a-SiOx：H materials is discussed in detail.