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Synthetic plasma and silicon tubular harness-based purebiological transistor amplifier circuit
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作者 killol pandya shivprasad kosta 《The Journal of Biomedical Research》 CAS CSCD 2017年第5期466-467,共2页
Dear Editor:Kosta et al.;first ever reported the development of biologic electronic components viz resistance R,capacitance C,diode D and transistor T using human tissues and human skin.In our early study;,we have dem... Dear Editor:Kosta et al.;first ever reported the development of biologic electronic components viz resistance R,capacitance C,diode D and transistor T using human tissues and human skin.In our early study;,we have demonstrated the feasibility of liquid medium(synthetic blood plasma)to develop bio-transistor,bio-resistor,and bio-capacitor and combined them to form an amplifier using the metallic harness(the interconnecting 展开更多
关键词 Synthetic plasma and silicon tubular harness-based pure biological transistor amplifier circuit
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Human blood plasma-based electronic integrated circuit amplifier configuration 被引量:1
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作者 Shiv Prasad Kosta Manthan Manavadaria +4 位作者 Killol Pandya Yogesh.Prasad Kosta Shakti Kosta Harsh Mehta Jaimin Patel 《The Journal of Biomedical Research》 CAS 2013年第6期520-522,共3页
Dear Editor: There is accumulating evidence that human blood electronic circuit components and their application circuits become more and more important to cyborg implant/engineering, man-machine interface, hu- man ... Dear Editor: There is accumulating evidence that human blood electronic circuit components and their application circuits become more and more important to cyborg implant/engineering, man-machine interface, hu- man disease detection and healing, and artificial brain evolutionusl. Here, we report the first development of human plasma-based amplifier circuit in the dis- crete as well as integrated circuit (IC) configuration mode. Electrolytes in the human blood contain an enormous number of charge carriers such as positive and negative molecule/atom ions, which are electri- cally conducting media and therefore can be utilized for developing electronic circuit components and their application circuits. These electronic circuits obvi- ously have very high application impact potential towards bio-medical engineering and medical science and technology. 展开更多
关键词 IC MHz Human blood plasma-based electronic integrated circuit amplifier configuration CRO over
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Radio Frequency Low Noise Amplifier with Linearizing Bias Circuit 被引量:1
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作者 Wen-Tao Han Qi Yu +1 位作者 Song Ye Mo-Hua Yang 《Journal of Electronic Science and Technology of China》 2009年第2期160-164,共5页
A 1.34 GHz-1=60 MHz low noise amplifier (LNA) designed in a 0.35 pm SiGe process is presented. The designed LNA exhibits a power gain of 21.46 dB and a noise figure (NF) of 1.27 dB at 1.34 GHz. The linearity is im... A 1.34 GHz-1=60 MHz low noise amplifier (LNA) designed in a 0.35 pm SiGe process is presented. The designed LNA exhibits a power gain of 21.46 dB and a noise figure (NF) of 1.27 dB at 1.34 GHz. The linearity is improved with an active biasing technique. The post-layout simulation shows an input referred 1-dB compression point (IPldn) of-11.52 dBm. Compared with the recent reported high gain LNAs, the proposed LNA has a much better linearity without degrading other performance. The LNA draws 10 mA current from a 3.3 V power supply. 展开更多
关键词 Index Terms-Impedance matching linear circuits low noise amplifier.
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A new probe for atmospheric electric field mill 被引量:2
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作者 孙健 王建岭 《Journal of Measurement Science and Instrumentation》 CAS 2014年第1期15-20,共6页
A new probe for atmospheric electric field mill is introduced.It consists of three parts:signal acquisition circuit for atmospheric electric field,preamplifier circuit and phase sensitive detection circuit.The signal... A new probe for atmospheric electric field mill is introduced.It consists of three parts:signal acquisition circuit for atmospheric electric field,preamplifier circuit and phase sensitive detection circuit.The signal acquisition circuit adopts the double-stator structure to form differential input circuit,thus double-precision is obtained.Preamplifier circuit is made of current-to-voltage (I-V) conversion circuit,differential amplifier circtuit and secondary amplifying circuit.The polarity of electric field is obtained via phase sensitive detection circuit.Simulation results are obtained using Multisim,and the feasibility of the designed probe is verified. 展开更多
关键词 atmospheric electric field mill PROBE DOUBLE-STATOR differential amplifier circuit preamplifier circuit
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Switched-capacitor multiply-by-two amplifier with reduced capacitor mismatches sensitivity and full swing sample signal common-mode voltage
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作者 徐新楠 姚素英 +1 位作者 徐江涛 聂凯明 《Journal of Semiconductors》 EI CAS CSCD 2012年第11期72-78,共7页
A switched-capacitor amplifier with an accurate gain of two that is insensitive to component mismatch is proposed.This structure is based on associating two sets of two capacitors in cross series during the amplificat... A switched-capacitor amplifier with an accurate gain of two that is insensitive to component mismatch is proposed.This structure is based on associating two sets of two capacitors in cross series during the amplification phase.This circuit permits the common-mode voltage of the sample signal to reach full swing.Using the charge-complement technique,the proposed amplifier can reduce the impact of parasitic capacitors on the gain accuracy effectively.Simulation results show that as sample signal common-mode voltage changes,the difference between the minimum and maximum gain error is less than 0.03%.When the capacitor mismatch is increased from 0 to 0.2%,the gain error is deteriorated by 0.00015%).In all simulations,the gain of amplifier is 69 dB. 展开更多
关键词 multiply-by-two amplifier mismatch-insensitive amplifier full swing switched-capacitor circuits
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A 3.8 GHz programmable gain amplifier with a 0.1 dB gain step
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作者 林楠 方飞 +1 位作者 洪志良 方昊 《Journal of Semiconductors》 EI CAS CSCD 2014年第3期122-127,共6页
A broadband programmable gain amplifier(PGA) with a small gain step and low gain error has been designed in 0.13 m CMOS technology. The PGA was implemented with open-loop architecture to provide wide bandwidth. A tw... A broadband programmable gain amplifier(PGA) with a small gain step and low gain error has been designed in 0.13 m CMOS technology. The PGA was implemented with open-loop architecture to provide wide bandwidth. A two-stage gain control method, which consists of a resistor ladder attenuator and an active fine gain control stage, provides the small gain step. A look-up table based gain control method is introduced in the fine gain control stage to lower the gain error.The proposedPGAshows a decibel-linear variable gainfrom4 to20 dB with a gain step of 0.1 dB and a gain error less than˙0.05 dB. The 3-dB bandwidth and maximum IIP3 are 3.8 GHz and 17 dBm, respectively. 展开更多
关键词 variable gain amplifier programmable gain amplifier decibel-linear gain CMOS integrated circuits hard disk drives
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An investigation of the DC and RF performance of InP DHBTs transferred to RF CMOS wafer substrate
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作者 Kun Ren Jiachen Zheng +4 位作者 Haiyan Lu Jun Liu Lishu Wu Wenyong Zhou Wei Cheng 《Journal of Semiconductors》 EI CAS CSCD 2018年第5期54-58,共5页
This paper investigated the DC and RF performance of the In P double heterojunction bipolar transistors(DHBTs)transferred to RF CMOS wafer substrate.The measurement results show that the maximum values of the DC cur... This paper investigated the DC and RF performance of the In P double heterojunction bipolar transistors(DHBTs)transferred to RF CMOS wafer substrate.The measurement results show that the maximum values of the DC current gain of a substrate transferred device had one emitter finger,of 0.8μm in width and 5μm in length,are changed unobviously,while the cut-off frequency and the maximum oscillation frequency are decreased from 220to 171 GHz and from 204 to 154 GHz,respectively.In order to have a detailed insight on the degradation of the RF performance,small-signal models for the In P DHBT before and after substrate transferred are presented and comparably extracted.The extracted results show that the degradation of the RF performance of the device transferred to RF CMOS wafer substrate are mainly caused by the additional introduced substrate parasitics and the increase of the capacitive parasitics induced by the substrate transfer process itself. 展开更多
关键词 CMOS technology amplifier integrated circuits
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