The resistance of the anodic PbO film formed on lead at 0.9 V (vs. Hg/Hg2SO4) in 4.5 mol/dm3 H2SO4 was measured using alternating-current impedance method. The resistance of the anodic PbO film was found to be close t...The resistance of the anodic PbO film formed on lead at 0.9 V (vs. Hg/Hg2SO4) in 4.5 mol/dm3 H2SO4 was measured using alternating-current impedance method. The resistance of the anodic PbO film was found to be close to that of the interstitial liquid among the PbO particles in the film, suggesting mat the interstitial liquid may serve as the major passage for ion transportation during the film growth.展开更多
基金Project supported by the National Natural Science Foundation of China (No. 29873013).
文摘The resistance of the anodic PbO film formed on lead at 0.9 V (vs. Hg/Hg2SO4) in 4.5 mol/dm3 H2SO4 was measured using alternating-current impedance method. The resistance of the anodic PbO film was found to be close to that of the interstitial liquid among the PbO particles in the film, suggesting mat the interstitial liquid may serve as the major passage for ion transportation during the film growth.
