Cu films with thickness of 630-1300nm were deposited on glass substrates without heating by DC magnetron sputtering in pure Ar gas. Ar pressure was controlled to 0.5, 1.0 and 1.5Pa respectively. The target voltage was...Cu films with thickness of 630-1300nm were deposited on glass substrates without heating by DC magnetron sputtering in pure Ar gas. Ar pressure was controlled to 0.5, 1.0 and 1.5Pa respectively. The target voltage was fixed at 500V but the target current increased from 200 to 1150mA with Ar pressure increasing. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used to observe the structural characterization of the films. The resistivity of the films was measured using four-point probe technique. At all the Ar pressures, the Cu films have mixture crystalline orientations of [111], [200] and [220] in the direction of the film growth. The film deposited at lower pressure shows more [111] orientation while that deposited at higher pressure has more [220] orientation. The amount of larger grains in the film prepared at 0.5Pa Ar pressure is slightly less than that prepared at 1.0Pa and 1.5Pa Ar pressures. The resistivities of the films prepared at three different Ar pressures represent few differences, about 3-4 times of that of bulk material. Besides the deposition rate increases with Ar pressure because of the increase in target current. The contribution of the bombardment of energetic reflected Argon atoms to these phenomena is discussed.展开更多
Transparent conducting oxide film of molybdenum-doped zinc oxide （MZO） with high transparency and relatively low resistivity was prepared by RF （radio frequency） magnetron sputtering at room temperature. The struc...Transparent conducting oxide film of molybdenum-doped zinc oxide （MZO） with high transparency and relatively low resistivity was prepared by RF （radio frequency） magnetron sputtering at room temperature. The structural, electrical, and optical properties of the films deposited under different Ar pressure were investigated.XRD （X-ray diffraction） patterns show that the nature of the films is polycrystalline with a hexagonal structure and a preferred orientation along the c-axis. The resistivity increases as Ar pressure increases. The lowest range exceeds 88% for all the samples. The optical band gap decreases from 3.27 to 3.15 eV with increasing Ar pressure from 0.6 to 3.0 Pa.展开更多
Deposition of TiO2 film from atmospheric pressure non- equilibrium Ar/O2/TiCl4 plasma was done to study the effect of discharge power during the film deposition process in this paper. TiO2 films with kinds of morpholo...Deposition of TiO2 film from atmospheric pressure non- equilibrium Ar/O2/TiCl4 plasma was done to study the effect of discharge power during the film deposition process in this paper. TiO2 films with kinds of morphologies and controlled crystallization were deposited from mixtures of TiCl4 and O2 on quartz substrate by one step process. Scanning electron microscope （SEM） and transmission electron microscope （TEM） were used to analyze the morphology and crystallization of the deposited TiO2 films. It was found that the discharge power played a key role in the morphology and crystallization of the deposited TiO2 film whether the flow of TiCl4was large or small. When the flow of TiCl4 was large, the deposited TiO2 film was amorphous particles at low discharge power and was multi-crystalline at high discharge power. When the flow of TiCl4 was small, the deposited TiO2 film became more compact and the crystallization was enhanced as the discharge power increased. The dependence of the discharge current and the applied voltage with the discharge power indicated that it was a glow discharge. The gas temperature which increases with the discharge power is one of the main causes that affect the morphology and crystallization of the deposited film.展开更多
基金The authors would like to thank Prof. Y.B. Wang and Mr. S. Liang of the Department of Material Physics for supporting AFM observations. The authors also would like to thank Ms. J.P. He of the State Key Laboratory for Advanced Metals and Materials for sup
文摘Cu films with thickness of 630-1300nm were deposited on glass substrates without heating by DC magnetron sputtering in pure Ar gas. Ar pressure was controlled to 0.5, 1.0 and 1.5Pa respectively. The target voltage was fixed at 500V but the target current increased from 200 to 1150mA with Ar pressure increasing. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used to observe the structural characterization of the films. The resistivity of the films was measured using four-point probe technique. At all the Ar pressures, the Cu films have mixture crystalline orientations of [111], [200] and [220] in the direction of the film growth. The film deposited at lower pressure shows more [111] orientation while that deposited at higher pressure has more [220] orientation. The amount of larger grains in the film prepared at 0.5Pa Ar pressure is slightly less than that prepared at 1.0Pa and 1.5Pa Ar pressures. The resistivities of the films prepared at three different Ar pressures represent few differences, about 3-4 times of that of bulk material. Besides the deposition rate increases with Ar pressure because of the increase in target current. The contribution of the bombardment of energetic reflected Argon atoms to these phenomena is discussed.
基金supported by the National Key Basic Research and Development Programme of China(No.2001CB610504)the National Natural Science Foundation of China(Grant No.60576039,10374060).
文摘Transparent conducting oxide film of molybdenum-doped zinc oxide （MZO） with high transparency and relatively low resistivity was prepared by RF （radio frequency） magnetron sputtering at room temperature. The structural, electrical, and optical properties of the films deposited under different Ar pressure were investigated.XRD （X-ray diffraction） patterns show that the nature of the films is polycrystalline with a hexagonal structure and a preferred orientation along the c-axis. The resistivity increases as Ar pressure increases. The lowest range exceeds 88% for all the samples. The optical band gap decreases from 3.27 to 3.15 eV with increasing Ar pressure from 0.6 to 3.0 Pa.
基金National Natural Science Foundations of China (No.10835004,No.10775031)Science and Technology Commission of Shanghai Municipality,China (No.10XD1400100)
文摘Deposition of TiO2 film from atmospheric pressure non- equilibrium Ar/O2/TiCl4 plasma was done to study the effect of discharge power during the film deposition process in this paper. TiO2 films with kinds of morphologies and controlled crystallization were deposited from mixtures of TiCl4 and O2 on quartz substrate by one step process. Scanning electron microscope （SEM） and transmission electron microscope （TEM） were used to analyze the morphology and crystallization of the deposited TiO2 films. It was found that the discharge power played a key role in the morphology and crystallization of the deposited TiO2 film whether the flow of TiCl4was large or small. When the flow of TiCl4 was large, the deposited TiO2 film was amorphous particles at low discharge power and was multi-crystalline at high discharge power. When the flow of TiCl4 was small, the deposited TiO2 film became more compact and the crystallization was enhanced as the discharge power increased. The dependence of the discharge current and the applied voltage with the discharge power indicated that it was a glow discharge. The gas temperature which increases with the discharge power is one of the main causes that affect the morphology and crystallization of the deposited film.
