高能Ar^+辐照P型CdZnTe的电学特性和光致发光

采用能量 2 Ge V、剂量 10 1 0— 10 1 3cm- 2的 Ar+辐照 P型 Cd0 .96 Zn0 .0 4Te材料 ,对辐照前后和不同辐照剂量的样品进行了电学测试和光致发光研究 .实验结果和分析表明 ,Ar+ 辐照在 Cd0 .96 Zn0 .0 4Te中产生了更大密度的受主型缺陷和散射中心 ,引起材料载流子 (空穴 )浓度的增大和迁移率的降低 .随着辐照剂量的增大 ,载流子迁移率的降低要比载流子浓度增大得快 。

Ar^+离子辐照对锆4合金耐腐蚀性能的影响

为了研究辐照损伤对锆4合金电化学耐腐蚀性能的影响,使用直线加速器产生单电荷载能Ar+,在液氮温度下辐照样品表面,产生缺陷。然后,测量辐照后锆4合金的电化学极化曲线,使用钝化电流密度作为评定腐蚀性能的指标,分析不同注量Ar+离子辐照对锆4合金钝化电流密度的影响。同时使用透射电子显微镜分析不同注量Ar+辐照下锆4合金损伤层的微观结构。实验结果表明:在低离子注量范围内(<3×1014/cm2),随着辐照量的增加钝化电流密度升高,耐腐蚀性能降低,在中等离子注量范围内(3×1014—1×1016/cm2),随着辐照量的增加钝化电流密度急速下降,耐腐蚀性能显著提高,在高离子注量范围内(1×1016—1×1017/cm2),随着辐照量的增加钝化电流密度又开始增加,耐腐蚀性能再次降低。最后,根据原子碰撞理论对实验结果进行了理论分析。

Phase changes of the ZrO_2-12 wt%Y_2O_3 film with Ar^+ irradiation

The zirconia containing 12wt%Y2O3 thin films deposited by r.f. magnetron sputtering at 25℃ or 400℃, and then bombarded with Ar+ beam at room temperature were characterized with XRD before and after Ar+ bombardment. It is found that a series of phases formation and transformation happened, among them the most important event is that T’ phase appeared after Ar+ irradiation and the content of the T’ phase increased with the increase of Ar+ ion doses from 5 ×1015 to 6×1016 ions cm-2.

Phase structure of the CPD prepared CdS films before and after Ar^+ ion irradiation

CdS films prepared with chemical pyrolysis deposition (CPD) at differ- ent temperature during film growth were characterized by XRD. Hexagon-like struc- ture appeared at the temperature of 350-500℃, while wurtzite phase was observed at temperature of 540℃ during film growth. Also CdS films prepared by CPD at 400℃ were undergone post annealing at different temperature of 200-600℃ or post Ar+ ion irradiation. It is found that wurtzite phase happened when the annealing temperature rose to 600℃. And hexagon-like structure existed at the annealing temperature from 25℃ to near 500℃. Ar+ ion irradiation could not cause phase transformation. but induce some preferred orientations and an increase in grain size for the CdS films.

290℃氩离子辐照对Fe-Cu合金微观组织的影响

在290℃对固溶态Fe-1.3%Cu(原子分数)合金进行4×10^(16) ion/cm^(2)注量氩离子辐照,用TEM观察样品微观组织,用原子探针表征溶质原子分布。结果表明,辐照层内形成大量黑斑缺陷,距辐照表面500~600 nm深度处存在直径1.3 nm的气泡。辐照层内存在富Cu团簇,随深度增加团簇尺寸和数量密度先增加后降低。这是由于高损伤剂量率与大尺寸级联碰撞共同作用抑制Cu原子偏聚,使近表面处富Cu团簇尺寸小、数量少,损伤剂量峰附近氩离子浓度增加,形成Ar-V团簇,长大过程中拖拽Cu原子进行迁移,促进富Cu团簇形成和长大。