In this paper the influences of the metal-gate and high-k/SiO 2 /Si stacked structure on the metal-oxide-semiconductor field-effect transistor（MOSFET） are investigated.The flat-band voltage is revised by considering...In this paper the influences of the metal-gate and high-k/SiO 2 /Si stacked structure on the metal-oxide-semiconductor field-effect transistor（MOSFET） are investigated.The flat-band voltage is revised by considering the influences of stacked structure and metal-semiconductor work function fluctuation.The two-dimensional Poisson＇s equation of potential distribution is presented.A threshold voltage analytical model for metal-gate/high-k/SiO 2 /Si stacked MOSFETs is developed by solving these Poisson＇s equations using the boundary conditions.The model is verified by a two-dimensional device simulator,which provides the basic design guidance for metal-gate/high-k/SiO 2 /Si stacked MOSFETs.展开更多
The partial opening of the working gate for a discharge tunnel is used more and more widely in the various conditions, such as releasing discharge to meet the needs of the various stages under construction, or of the ...The partial opening of the working gate for a discharge tunnel is used more and more widely in the various conditions, such as releasing discharge to meet the needs of the various stages under construction, or of the operations at low reservoir levels. In this article the hydraulic characteristics were investigated of the partial opening of the working gate based on the physical model experiments of the discharge tunnel for the Longtan Hydropower Project, including the discharge coefficient, the surface profile of the free flow section, the bottom pressure distribution of the tunnel with an aerator, the cavity length just from the ramp, and the wall pressure of the curve section of the outlet. Some new issues were discussed and the properties were presented of the partial opening of the gate.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60936005 and 61076097)the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China (Grant No. 708083)the Fundamental Research Funds for the Central Universities (Grant No. 20110203110012)
文摘In this paper the influences of the metal-gate and high-k/SiO 2 /Si stacked structure on the metal-oxide-semiconductor field-effect transistor（MOSFET） are investigated.The flat-band voltage is revised by considering the influences of stacked structure and metal-semiconductor work function fluctuation.The two-dimensional Poisson＇s equation of potential distribution is presented.A threshold voltage analytical model for metal-gate/high-k/SiO 2 /Si stacked MOSFETs is developed by solving these Poisson＇s equations using the boundary conditions.The model is verified by a two-dimensional device simulator,which provides the basic design guidance for metal-gate/high-k/SiO 2 /Si stacked MOSFETs.
基金the National Natural Science Foundation of China (Grant No. 50539060).
文摘The partial opening of the working gate for a discharge tunnel is used more and more widely in the various conditions, such as releasing discharge to meet the needs of the various stages under construction, or of the operations at low reservoir levels. In this article the hydraulic characteristics were investigated of the partial opening of the working gate based on the physical model experiments of the discharge tunnel for the Longtan Hydropower Project, including the discharge coefficient, the surface profile of the free flow section, the bottom pressure distribution of the tunnel with an aerator, the cavity length just from the ramp, and the wall pressure of the curve section of the outlet. Some new issues were discussed and the properties were presented of the partial opening of the gate.
