Ti/Al based Ohmic contacts to as-grown N-polar GaN are investigated by cross-section transmission electron microscopy and energy dispersive x-ray spectroscopy. Due to the higher oxygen background doping in the N- pola...Ti/Al based Ohmic contacts to as-grown N-polar GaN are investigated by cross-section transmission electron microscopy and energy dispersive x-ray spectroscopy. Due to the higher oxygen background doping in the N- polar GaN, the A1 metal in Ohmic stacks is found to react with background oxygen more easily, resulting in more AlOe. In addition, the formation of AlOx is affected by the A1 layer thickness greatly. The AlOx combined with the presence of AIN is detrimental to the Ohmic contacts for N-polar GaN compared with Ga-polar GaN. With the reduction of the AI layer thickness to some extent, less AlOx and AIN are formed, and lower Ohmic contact resistance is obtained. The lowest contact resistivity p of 1.97 × 10-6 Ω·cm2 is achieved with the AI layer thickness of 80 nm.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 61306113
文摘Ti/Al based Ohmic contacts to as-grown N-polar GaN are investigated by cross-section transmission electron microscopy and energy dispersive x-ray spectroscopy. Due to the higher oxygen background doping in the N- polar GaN, the A1 metal in Ohmic stacks is found to react with background oxygen more easily, resulting in more AlOe. In addition, the formation of AlOx is affected by the A1 layer thickness greatly. The AlOx combined with the presence of AIN is detrimental to the Ohmic contacts for N-polar GaN compared with Ga-polar GaN. With the reduction of the AI layer thickness to some extent, less AlOx and AIN are formed, and lower Ohmic contact resistance is obtained. The lowest contact resistivity p of 1.97 × 10-6 Ω·cm2 is achieved with the AI layer thickness of 80 nm.
