Suppressing Charge Recombination in ZnO-Nanorod-Based Perovskite Solar Cells with Atomic-Layer-Deposition TiO2

ZnO nanorods are passivated with a TiO2 interracial layer and applied in the CH3NH3PbI3 perovskite solar cell, which prepared by the atomic layer deposition method show a positive effect on the tiff factor and power conversion efficiency. With TiO2 interracial passivation, the charge recombination in the ZnO/CH3NH3PbI3 interface is effectively suppressed and the maximum power conversion efficiency is enhanced from 11.9% to 13.4%.

Influence of Post-Annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited ZnO-Channel/Al_2O_3-Dielectric

High-performance thin-film transistors （TFTs） with a low thermal budget are highly desired for flexible electronic applications. In this work, the TFTs with atomic layer deposited ZnO-channel/Al2O3-dielectric are fabricated under the maximum process temperature of 200℃. First, we investigate the effect of post-annealing environment such as N2, H2-N2 （4%） and O2 on the device performance, revealing that o2 annealing can greatly enhance the device performance. Further, we compare the influences of annealing temperature and time on the device performance. It is found that long anneMing at 200℃is equivalent to and even outperforms short annealing at 300℃. Excellent electrical characteristics of the TFTs are demonstrated after 02 anneMing at 200℃ for 35 rain, including a low off-current of 2.3 × 10-13 A, a small sub-threshold swing of 245 m V/dec, a large on/off current ratio of 7.6×10s, and a high electron effective mobility of 22.1cm2/V.s. Under negative gate bias stress at -10 V, the above devices show better electrical stabilities than those post-annealed at 300℃. Thus the fabricated high-performance ZnO TFT with a low thermal budget is very promising for flexible electronic applications.

High density Al2O3/TaN-based metal-insulatormetal capacitors in application to radio equency integrated circuits

Metal-insulator-metal （MIM） capacitors with atomic-layer-deposited Al2O3 dielectric and reactively sputtered TaN electrodes in application to radio frequency integrated circuits have been characterized electrically. The capacitors exhibit a high density of about 6.05 fF/μm^2, a small leakage current of 4.8 × 10^-8 A/cm^2 at 3 V, a high breakdown electric field of 8.61 MV/cm as well as acceptable voltage coefficients of capacitance （VCCs） of 795 ppm/V2 and 268ppm/V at 1 MHz. The observed properties should be attributed to high-quality Al2O3 film and chemically stable TaN electrodes. Further, a logarithmically linear relationship between quadratic VCC and frequency is observed due to the change of relaxation time with carrier mobility in the dielectric. The conduction mechanism in the high field ranges is dominated by the Poole-Frenkel emission, and the leakage current in the low field ranges is likely to be associated with trap-assisted tunnelling. Meanwhile, the Al2O3 dielectric presents charge trapping under low voltage stresses, and defect generation under high voltage stresses, and it has a hard-breakdown performance.

Low voltage program-erasable Pd-Al_2O_3-Si capacitors with Ru nanocrystals for nonvolatile memory application

Pd-Al2O3-Si capacitors with Ru nanocrystals are fabricated and electrically characterized for nonvolatile memory application. While keeping the entire insulator Al2O3 thickness fixed, the memory window has a strong dependence on the tunneling layer thickness under low operating voltages, whereas it has weak dependence under high operating voltages. As for the optimal configuration comprised of 6-nm tunneling layer and 22-nm blocking layer, the resulting memory window increases from 1.5 V to 5.3 V with bias pulse increasing from 10-5 s to 10-2 s under ±7 V. A ten-year memory window as large as 5.2 V is extrapolated at room temperature after ±8 V/1 ms programming/erasing pulses.

TiO^(2)electron transport bilayer for all-inorganic perovskite photodetectors with remarkably improved UV stability toward imaging applications

High ultraviolet(UV)stability and low dark current(Idark)are necessary for high-quality perovskite photodetectors(PDs).TiO^(2)thin film is known as effective electron-transport-layer(ETL)for perovskite devices.However,common spin-coated TiO^(2)ETLs endow many surface defects and have strong UV photocatalytic effect to decompose perovskite materials,resulting in inferior stability of devices.In this work,TiO^(2)bilayer film(Bi-TiO^(2))has been fabricated by combining spin-coating and atomic-layer-deposition process and its positive effects on UV stability and Idarkof Cs2 AgBiBr6-based PDs have been revealed for the first time.It is demonstrated that Bi-TiO^(2)possesses fewer surface defects and smoother morphology with type II band alignment,which is beneficial to suppress photocatalytic activity of TiO^(2)and reduce carrier recombination at the interface.After accelerated strong UV aging treatment,the PD with Bi-TiO^(2)maintains excellent performance,whereas the PD with spin-coated TiO^(2)film dramatically deteriorate with on-off ratio drops from~102 to~2.Besides,the Idarkof PD remarkably decreases from~10^(-8) A to~10^(-10) A after bilayer optimization.Furthermore,we have integrated the corresponding PDs into a self-built imaging system adopting diffuse reflection mode.This work suggests a feasible approach to fabricate TiO^(2)/Cs2 AgBiBr6-based PDs with remarkable UV tolerance for imaging applications.