采用改进型嵌入原子法(modifiedembedded atom method,MEAM),计算了(001)Au/(111)Si、(011)Au/(111)Si、(111)Au/(111)Si、(001)Au/(001)Si、(011)Au/(001)Si、(111)Au/(001)Si六个扭转界面的界面能.结果表明,不论是对于(111)Si还是(001...采用改进型嵌入原子法(modifiedembedded atom method,MEAM),计算了(001)Au/(111)Si、(011)Au/(111)Si、(111)Au/(111)Si、(001)Au/(001)Si、(011)Au/(001)Si、(111)Au/(001)Si六个扭转界面的界面能.结果表明,不论是对于(111)Si还是(001)Si基底,相同基底的界面均按照(111)Au/Si、(001)Au/Si、(011)Au/Si顺序依次增加;从界面能的最小化考虑,Au在(111)Si或(001)Si基底上的外延生长,Au(111)面为择优晶面,择优扭转角分别为θ=2.68°和θ=2.42°.展开更多
In this paper, the electrical parameters of Au/n-Si （MS） and Au/Si3N4/n-Si （MIS） Schottky diodes are obtained from the forward bias current-voltage （I-V） and capacitance-voltage （C-V） measurements at room temp...In this paper, the electrical parameters of Au/n-Si （MS） and Au/Si3N4/n-Si （MIS） Schottky diodes are obtained from the forward bias current-voltage （I-V） and capacitance-voltage （C-V） measurements at room temperature. Experimental results show that the rectifying ratios of the MS and MIS diodes at ± 5 V are found to be 1.25 ×103 and 1.27 ×104, respectively. The main electrical parameters of the MS and MIS diodes, such as the zero-bias barrier height （rbBo） and ideality factor （n）, are calculated to be 0.51 eV （I-V）, 0.53 eV （C-V）, and 4.43, and 0.65 eV （I-V）, 0.70 eV （C-V）, and 3.44, respectively. In addition, the energy density distribution profile of the interface states （Nss） is obtained from the forward bias I-V, and the series resistance （Rs） values for the two diodes are calculated from Cheung＇s method and Ohm＇s law.展开更多
The dielectric properties of Au/Si3N4/n-Si （MIS） structures are studied using the admittance measurements （C–V and G/ω–V） each as a function of temperature in a range from 80 K to 400 K for two frequencies （10...The dielectric properties of Au/Si3N4/n-Si （MIS） structures are studied using the admittance measurements （C–V and G/ω–V） each as a function of temperature in a range from 80 K to 400 K for two frequencies （100 kHz and 1 MHz）. Experimental results show that both the dielectric constant （ε’） and the dielectric loss （ε＂） increase with temperature increasing and decrease with frequency increasing. The measurements also show that the ac conductivity （σac） increases with temperature and frequency increasing. The lnσac versus 1000/T plot shows two linear regions with different slopes which correspond to low （120 K–240 K） and high （280 K–400 K） temperature ranges for the two frequencies. It is found that activation energy increases with frequency and temperature increasing.展开更多
By direct observations of transmission electron microscopy (TEM), irreversible morphological transformations of as-deposited amorphous Au/Si multilayer (a-Au/a-Si) were observed on heating. The well arrayed sequence o...By direct observations of transmission electron microscopy (TEM), irreversible morphological transformations of as-deposited amorphous Au/Si multilayer (a-Au/a-Si) were observed on heating. The well arrayed sequence of the multilayer changed to zigzag layered structure at 478 K (=Tzig). Finally, the zigzag structure transformed to Au nanoparticles at 508 K. The distribution of the Au nanoparticles was random within the thin film. In situ X-ray diffraction during heating can clarify partial crystallization Si (c-Si) in the multilayer at 450 K (= ), which corresponds to metal induced crystallization (MIC) from amorphous Si (a-Si) accompanying by Au diffusion. On further heating, a-Au started to crystallize at around 480 K (=Tc) and gradually grew up to 3.2 nm in radius, although the volume of c-Si was almost constant. Continuous heating caused crystal Au (c-Au) melting into liquid AuSi (l-AuSi) at 600 K (= ), which was lower than bulk eutectic temperature ( ). Due to the AuSi eutectic effect, reversible phase transition between liquid and solid occurred once temperature is larger than . Proportionally to the maximum temperatures at each cycles (673, 873 and 1073 K), both and Au crystallization temperature approaches to . Using a thermodynamic theory of the nanoparticle formation in the eutectic system, the relationship between and the nanoparticle size is explained.展开更多
文摘采用改进型嵌入原子法(modifiedembedded atom method,MEAM),计算了(001)Au/(111)Si、(011)Au/(111)Si、(111)Au/(111)Si、(001)Au/(001)Si、(011)Au/(001)Si、(111)Au/(001)Si六个扭转界面的界面能.结果表明,不论是对于(111)Si还是(001)Si基底,相同基底的界面均按照(111)Au/Si、(001)Au/Si、(011)Au/Si顺序依次增加;从界面能的最小化考虑,Au在(111)Si或(001)Si基底上的外延生长,Au(111)面为择优晶面,择优扭转角分别为θ=2.68°和θ=2.42°.
基金supported by Gazi University Scientific Research Project (BAP),FEF. 05/2012-15
文摘In this paper, the electrical parameters of Au/n-Si （MS） and Au/Si3N4/n-Si （MIS） Schottky diodes are obtained from the forward bias current-voltage （I-V） and capacitance-voltage （C-V） measurements at room temperature. Experimental results show that the rectifying ratios of the MS and MIS diodes at ± 5 V are found to be 1.25 ×103 and 1.27 ×104, respectively. The main electrical parameters of the MS and MIS diodes, such as the zero-bias barrier height （rbBo） and ideality factor （n）, are calculated to be 0.51 eV （I-V）, 0.53 eV （C-V）, and 4.43, and 0.65 eV （I-V）, 0.70 eV （C-V）, and 3.44, respectively. In addition, the energy density distribution profile of the interface states （Nss） is obtained from the forward bias I-V, and the series resistance （Rs） values for the two diodes are calculated from Cheung＇s method and Ohm＇s law.
基金Projected supported by Gazi University Scientific Research Project(BAP),FEF.05/2012-15
文摘The dielectric properties of Au/Si3N4/n-Si （MIS） structures are studied using the admittance measurements （C–V and G/ω–V） each as a function of temperature in a range from 80 K to 400 K for two frequencies （100 kHz and 1 MHz）. Experimental results show that both the dielectric constant （ε’） and the dielectric loss （ε＂） increase with temperature increasing and decrease with frequency increasing. The measurements also show that the ac conductivity （σac） increases with temperature and frequency increasing. The lnσac versus 1000/T plot shows two linear regions with different slopes which correspond to low （120 K–240 K） and high （280 K–400 K） temperature ranges for the two frequencies. It is found that activation energy increases with frequency and temperature increasing.
文摘By direct observations of transmission electron microscopy (TEM), irreversible morphological transformations of as-deposited amorphous Au/Si multilayer (a-Au/a-Si) were observed on heating. The well arrayed sequence of the multilayer changed to zigzag layered structure at 478 K (=Tzig). Finally, the zigzag structure transformed to Au nanoparticles at 508 K. The distribution of the Au nanoparticles was random within the thin film. In situ X-ray diffraction during heating can clarify partial crystallization Si (c-Si) in the multilayer at 450 K (= ), which corresponds to metal induced crystallization (MIC) from amorphous Si (a-Si) accompanying by Au diffusion. On further heating, a-Au started to crystallize at around 480 K (=Tc) and gradually grew up to 3.2 nm in radius, although the volume of c-Si was almost constant. Continuous heating caused crystal Au (c-Au) melting into liquid AuSi (l-AuSi) at 600 K (= ), which was lower than bulk eutectic temperature ( ). Due to the AuSi eutectic effect, reversible phase transition between liquid and solid occurred once temperature is larger than . Proportionally to the maximum temperatures at each cycles (673, 873 and 1073 K), both and Au crystallization temperature approaches to . Using a thermodynamic theory of the nanoparticle formation in the eutectic system, the relationship between and the nanoparticle size is explained.
