Compositional study of δ-NbN film by Auger electron microscopy

The chemical stoichiometry on the surface of superconducting δ-NbN thin films is of great importance for their application.Here,we fabricated the δ-NbN thin films on SiO2/Si substrate by DC sputtering method.The film was characterized using X-ray diffraction(XRD) and atomic force microscopy(AFM).Transport properties were measured to reveal the field dependent superconducting transition temperature.Both XRD and electrical measurement show high crystallinity of δ-NbN phase.A homogeneous and smooth surface morphology was measured by AFM.Auger electron spectroscopy(AES) was applied to analyze the composition along the depth of the film.The evolution of Auger peak profile,heights and nitride stoichiometry at the film surface is discussed.The current study provides a more thorough understanding of complex chemical compositions of δ-NbN thin films.

Oxidation Kinetics of (111) Silicon Monocrystal and Morphology of Oxide Film in Dry Oxygen Atmosphere

1. Introduction Thermal oxidation of silicon monocrystalis a very important process in fabricationof metal--oxide--semiconductor (MOS) devices.In recent years it has received great atten-tion. Various proposals for oxidation modeshave been made by different groups.Now most of the authors working in thisfield hold the view that the oxidation rateof silicon obeys a typical parabolic rule,that is, the oxidation reaction is controlledby diffusion. The experimental data inRef. can be taken and a kinetic curve

Improvement in the electrical performance and bias-stress stability of dual-active-layered silicon zinc oxide/zinc oxide thin-film transistor

Si-doped zinc oxide（SZO） thin films are deposited by using a co-sputtering method,and used as the channel active layers of ZnO-based TFTs with single and dual active layer structures.The effects of silicon content on the optical transmittance of the SZO thin film and electrical properties of the SZO TFT are investigated.Moreover,the electrical performances and bias-stress stabilities of the single- and dual-active-layer TFTs are investigated and compared to reveal the effects of the Si doping and dual-active-layer structure.The average transmittances of all the SZO films are about 90% in the visible light region of 400 nm-800 nm,and the optical band gap of the SZO film gradually increases with increasing Si content.The Si-doping can effectively suppress the grain growth of ZnO,revealed by atomic force microscope analysis.Compared with that of the undoped ZnO TFT,the off-state current of the SZO TFT is reduced by more than two orders of magnitude and it is 1.5 × 10^-12 A,and thus the on/off current ratio is increased by more than two orders of magnitude.In summary,the SZO/ZnO TFT with dual-active-layer structure exhibits a high on/off current ratio of 4.0 × 10^6 and superior stability under gate-bias and drain-bias stress.

金红石型TiO_(2)的氧化硅膜包覆及其动力学研究

目的研究以液相沉淀法制备硅包膜钛白粉(SiO_(2)@TiO_(2))及氧化硅在TiO_(2)粒子表面的沉积成膜过程动力学,从而指导钛白粉表面改性工艺的优化。方法以硅酸钠为包膜剂在TiO_(2)表面包覆氧化硅膜层,通过比表面积、Zeta电位、SEM和酸溶率分析,研究包膜温度、包膜pH、熟化时间等工艺条件对SiO_(2)@TiO_(2)膜层结构的影响。采用动力学模型对氧化硅在TiO_(2)粒子表面的反应成膜过程进行计算拟合。结果在包膜温度368 K、包膜pH=9.0以及反应熟化时间180 min时,获得的SiO_(2)@TiO_(2)氧化硅膜层致密性好,酸溶率稳定在14%的较低水平,比表面积保持在10.58 m^(2)/g,等电点维持在2.34。氧化硅在TiO_(2)粒子表面的成核点形成阶段的活化能为16.31 kJ/mol,生长成膜阶段的活化能为25.80 kJ/mol。结论提高反应温度、在弱碱性条件下、延长熟化时间可使制备的SiO_(2)@TiO_(2)膜层致密性提高;SiO_(2)@TiO_(2)的比表面积、等电点与反映SiO_(2)@TiO_(2)膜层致密程度的酸溶率具有高度的相关性;氧化硅膜层在TiO_(2)表面的包覆过程分为成核点形成以及氧化硅沉积成膜两个阶段,均符合三级反应动力学特征。

高硅无取向电工钢的高温氧化行为

采用对比实验研究了不同温度下的高硅无取向电工钢的氧化行为,利用场发射扫描电子显微镜及其EDS功能观察了经不同温度(1030~1240℃)加热后高硅无取向电工钢氧化层的微观形貌、结构组成及合金元素的偏析现象.结果表明:经高温加热后的高硅无取向电工钢氧化层主要包括4部分,分别为纯氧化铁层、铁橄榄石和氧化铁混合层、富Si区与贫Si区混合层、致密氧化膜层;高温氧化过程中会产生Si成分偏析现象,1240℃时Si的偏析深度可达130μm,不同深度偏析处的Si质量分数相差可达0.9%,且随着温度的降低,偏析程度逐渐减弱,直至消失.

Nanoporous SiO_x coated amorphous silicon anode material with robust mechanical behavior for high-performance rechargeable Li-ion batteries

Silicon is a promising anode material for rechargeable Li-ion battery (LIB) due to its high energy density and relatively low operating voltage. However, silicon based electrodes suffer from rapid capacity degradation during electrochemical cycling. The capacity decay is predominantly caused by (i) cracking due to large volume variations during lithium insertion/extraction and (ii) surface degradation due to excessive solid electrolyte interface (SEI) formation. In this work, we demonstrate that coating of a-Si thin film with a Li-active, nanoporous SiOx layer can result in exceptional electrochemical performance in Li-ion battery. The SiOx layer provides improved cracking resistance to the thin film and prevent the active material loss due to excessive SEI formation, benefiting the electrode cycling stability. Half-cell experiments using this anode material show an initial reversible capacity of 2173 mAh g^-1 with an excellent coulombic efficiency of 90.9%. Furthermore, the electrode shows remarkable capacity retention of ~97% after 100 cycles at C/2 charging rate. The proposed anode architecture is free from Liinactive binders and conductive additives and provides mechanical stability during the charge/discharge process.

Structural properties of a-SiO_x:H films studied by an improved infrared-transmission analysis method

An improved method of fitting point-by-point is proposed to determine the absorption coefficient from infrared （IR） transmittance. With no necessity of empirical correction factors, the absorption coefficient can be accurately determined for the films with thin thicknesses. Based on this method, the structural properties of the hydrogenated amorphous silicon oxide materials （a-SiOx：H） are investigated. The oxygen-concentration-dependent variation of the Si-O-Si and the Si-H related modes in a-SiOx：H materials is discussed in detail.

Evolution of Structural Defects in SiOx Films Fabricated by Electron Cyclotron Resonance Plasma Chemical Vapour Deposition upon Annealing Treatment

We study the structural defects in the SiO, film prepared by electron cyclotron resonance plasma chemical vapour deposition and annealing recovery evolution. The photoluminescence property is observed in the as-deposited and annealed samples. [-SiO3]^2- defects are the luminescence centres of the ultraviolet photoluminescence （PL） from the Fourier transform infrared spectroscopy and PL measurements. [-SiO3]^2- is observed by positron annihilation spectroscopy, and this defect can make the S parameters increase. After 1000℃ annealing, [-SiO3]^2- defects still exist in the films.

Evolution of insoluble eutectic Si particles in anodic oxidation films during adipic–sulfuric acid anodizing processes of ZL114A aluminum alloys

The effects of insoluble eutectic Si particles on the growth of anodic oxide films on ZL114A aluminum alloy substrates were in- vestigated by optical microscopy （OM） and scanning electron microscopy （SEM）. The anodic oxidation was performed at 25℃ and a con- stant voltage of 15 V in a solution containing 50 g/L sulfuric acid and 10 g/L adipic acid. The thickness of the formed anodic oxidation film was approximately 7.13 μm. The interpore distance and the diameters of the major pores in the porous layer of the film were within the ap- proximate ranges of 10~20 nm and 5-10 nm, respectively. Insoluble eutectic Si particles strongly influenced the morphology of the anodic oxidation films. The anodic oxidation films exhibited minimal defects and a uniform thickness on the ZL114A substrates; in contrast, when the front of the oxide oxidation films encountered eutectic Si particles, defects such as pits and non-uniform thickness were observed, and pits were observed in the films.

Morphology and Structure of SiO_2 Film Using Thermal Oxidation Process on(111)Silicon Crystals in Dry Oxygen Atmosphere

By means of scanning electron microscope(SEM)and high voltage electron microscope(HVEM)we have observed and analysed morphology and micro-structure of silicon oxide film with different thickness formed on(111)silicon monocrystal under dry oxygen atmosphere at 1100℃.Compared with their oxidation kinetic curves consisted of three stages,we suggested a mechanism on forming silicon oxide film.According to electron and X-ray diffraction analyses the silicon oxide films consisted of silica with different crystal structure.We also have discussed a stacking fault and a dislocation formed in the Si-Sio_2 interface region simulaneously forming silicon oxide film.

Formation of Interfacial Layers in LaAlO3/Silicon during Film Deposition

We have studied the interracial reactions between amorphous LaAlO3 thin films and Si substrates, using high- resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the interracial layer between LaAlO3 film and Si substrate chemical states show that the ratio of La 4d3/2 to Al 2p is SiLaxAlyOz. The depth distributions of La, Si and Al of the interfacial layer remains unchanged with the depth compared to that of the LaAlO3 film. Moreover, the Si content, in the interracial layer gradually decreases with increasing thickness of the interracial layer. These results strongly suggest that the Al element is not deficient in the interracial layer, as previously believed, and the formation of a SiLaxAlyOz interracial layer is mainly due to the diffusion of Si from the substrate during the LaAlO3 film deposition. With the understanding of the interracial layer formation, ones can control the interface characteristics to ensure the desired performances of devices using high-k oxides as gate dielectrics.

基于MEMS声敏结构的光纤声波传感器

基于微机电系统(Micro Electro Mechanical System,MEMS)工艺加工声波敏感结构,将声波敏感结构与光纤端面构成非本征型光纤法布里-珀罗干涉仪(Extrinsic Fabry-Perot Interferometer,EFPI)感知声波。研究了不同厚度和不同增敏环数的声压敏感薄膜结构对声波探测性能的差异,对比了信噪比测试结果。实验结果表明,针对400 nm和1000 nm厚度的声敏薄膜,在相同的测试条件下,前者的声敏结构位移更大、频率响应的信噪比更高。在相同薄膜厚度条件下,具有增敏结构的MEMS薄膜可以释放薄膜的初始应力,降低薄膜的刚性,相比无增敏结构的MEMS薄膜具有更高的灵敏度。

纳米SiO_(2)-马铃薯氧化羟丙基淀粉复合膜的制备及性能表征

以新型材料马铃薯氧化羟丙基淀粉(potato oxidizes hydroxypropyl starch,POHS)为基材,纳米SiO_(2)为增强剂,制备一种综合性能良好的纳米SiO_(2)-POHS复合膜。研究纳米SiO_(2)添加量、乳酸钙的添加量、糊化温度、糊化时间对POHS膜机械性能的影响,并结合响应面设计试验,探讨各因素之间的交互作用,得出复合膜制备的最佳工艺配方。通过傅里叶红外光谱分析、扫描电镜、X-射线衍射分析对膜结构进行表征,并测定其不透明度,水蒸气透过率,透油系数等物理指标。结果表明,当纳米SiO_(2)添加量为15%(质量分数),糊化温度85℃,乳酸钙添加量为3%(质量分数),糊化时间70 min时,复合膜的拉伸强度为14.72 MPa。所制得的复合膜厚度降低了15.79%,不透明度增加了83.54%,水蒸气透过系数降低了37.91%,透油系数降低了38.04%。综上,纳米SiO_(2)的加入能够有效提高膜的综合性能。

用于晶硅异质结太阳电池的透明导电薄膜研究进展

提升晶硅异质结(HJT)太阳电池的电流有望进一步提高电池效率,透明导电氧化物薄膜(TCO)是影响HJT太阳电池电流的重要功能层。该文首先介绍了TCO薄膜的自身特性,包括掺杂元素和掺杂比例、制备技术对薄膜特性的影响。同时总结了薄膜特性对HJT太阳电池性能的影响。最后阐述了TCO薄膜应用的最新进展及发展趋势,增加盖帽层或多层TCO薄膜有望改善薄膜整体特性及电池性能。以期指导TCO薄膜特性的优化,从而进一步提高HJT太阳电池效率,加快HJT太阳电池产业化进程。

晶硅异质结太阳电池nc-Si:H/nc-SiOx:H叠层窗口层研究

该研究制备高电导、高透明的磷掺杂氢化纳米晶硅氧(nc-Si Ox:H)薄膜,应用于晶硅异质结(SHJ)太阳电池的窗口层以替代传统的氢化非晶硅(a-Si:H)薄膜。与以a-Si:H薄膜为窗口层的电池相比,短路电流密度提高0.5 m A/cm^(2),达到38.5 m A/cm^(2),填充因子为82.7%,光电转换效率为23.5%。实验发现,在nc-Si Ox:H薄膜沉积前对本征非晶硅层表面进行处理,沉积1 nm纳米晶硅(nc-Si:H)种子层,可改善nc-Si Ox:H薄膜的晶化率,降低薄膜中的非晶相含量。与单层nc-Si Ox:H窗口层的电池相比,nc-Si:H/nc-Si Ox:H叠层结构提高电池填充因子,达到83.4%,光电转换效率增加了0.3%,达到23.8%。

硅异质结太阳能电池用透明导电氧化物薄膜的研究现状及发展趋势

硅异质结(SHJ)太阳能电池是目前光伏产业中的重要组成部分,其由于具有高开路电压(V_(oc))等优点而引起了广泛的关注。在硅异质结太阳能电池中,透明导电氧化物(TCO)薄膜层的光学性能和电学性能分别影响着电池的短路电流(J_(sc))、填充因子(FF),进而影响电池的转换效率。近年来,SHJ电池中TCO层的研究主要集中于掺杂的In 2O 3和ZnO体系。本文从硅异质结太阳能电池的不同结构出发,概述了TCO薄膜的光电性能(透过率、禁带宽度、方块电阻、载流子浓度、迁移率和功函数)以及与相邻层的接触对电池性能的影响,介绍了不同体系的透明导电氧化物薄膜在硅异质结太阳能电池中的应用及研究现状,并展望其未来的发展趋势。

Evolution of stress in evaporated silicon dioxide thin films

The evolution of stress in evaporated SiO2, used as optical coatings, is investigated experimentally through in situ stress measurement. A typical evolution pattern consisting of five subprocedures （thin film deposition, stopping deposition, cooling, venting the vacuum chamber, and exposing coated optics to the atmosphere） is put forward. Further investigations into the subprocedures reveal their features. During the deposition stage, the stresses are usually compressive and reach a stable state when the deposited film is thicker than 100 nm. An increment of compressive stress value is observed with the decrease of residual gas pressure or deposition rate. A very low stress of-20 MPa is formed in SiO2 films deposited at 3×10^-2 Pa. After deposition, the stress increases slightly in the compressive direction and is subject to the stabilization in subsequent tens of minutes. In the process of venting and exposure, the compressive component increases rapidly with the admission of room air and then reaches saturation, followed by a logarithmic decrement of the compressive state in the succeeding hours. An initial discussion of these behaviors is given.

Fabrication and characteristics of silicon-rich oxide thin films with controllable compositions

Silicon-rich oxide films with controllable optical constants and properties are deposited by the reactive magnet- ton sputtering method on a Si target. The O/Si atomic ratio x of SiOx is tuned from 0.12 to 1.84 by adjusting the oxygen flow rate, which is found to be a more effective way to obtain SiOx films compared with changing the oxygen content [O2/（Ar ＋ O2） ratio]. The optical properties of SiOx films can be tuned from semiconductor to dielectric as a function of ratio x. The structures and components are also investigated by an x ray photoelectron spectroscopy analysis of the Si 2p core levels, the results of which exhibit that the structures of SiOx can be thoroughly described by the random bonding model.

Properties of fluorescence based on the immobilization of graphene oxide quantum dots in nanostructured porous silicon films

The fluorescence of graphene oxide quantum dots （GOQDs） that are infiltrated into porous silicon （PSi） is investigated. By dropping activated GOQDs solution onto silanized PSi samples, GOQDs are successfully in- filtrated into a PSi device. The results indicate that the intensity of the fluorescence of the GOQD-inflltrated multilayer with a high reflection band located at its fluorescence spectra scope is approximately double that of the single layer sample. This indicates that the multilayer GOQD-infiltrated PSi substrate is a suitable material for the preparation of sensitive photoluminescence biosensors.

100μm大晶粒多晶硅薄膜的铝诱导法制备

以Corning Eagle 2000玻璃为衬底,用磁控溅射法制备了glass/a-Si/Si O2/Al叠层结构,于Ar气保护下退火,制备了具有很强的(111)择优取向,最大晶粒尺寸达100μm的铝诱导晶化多晶硅薄膜。研究结果表明,非晶硅的氧化时间越长,所制备的多晶硅晶粒尺寸越大,当氧化时间达约47h后,再延长氧化时间对薄膜性能的影响不明显。还发现退火温度越高,晶粒越小,但是反应速率越快。