A New Method to Investigate InGaAsP Single-Photon Avalanche Diodes Using a Digital Sampling Oscilloscope

A near-infrared single-photon detection system is established by using pigtailed InGaAs/InP avalanche photodiodes. With a 50GHz digital sampling oscilloscope, the function and process of gated-mode （Geiger-mode） single-photon detection are intuitionally demonstrated for the first time. The performance of the detector as a gated-mode single-photon counter at wavelengths of 1310 and 1550nm is investigated. At the operation temperature of 203K,a quantum efficiency of 52% with a dark count probability per gate of 2.4 × 10 ^-3 ,and a gate pulse repetition rate of 50kHz are obtained at 1550nm. The corresponding parameters are 43%, 8.5 × 10^-3 , and 200kHz at 238K.

High photon detection efficiency InGaAs/InP single photon avalanche diode at 250 K

Planar semiconductor InGaAs/InP single photon avalanche diodes with high responsivity and low dark count rate are preferred single photon detectors in near-infrared communication.However,even with well-designed structures and well-con-trolled operational conditions,the performance of InGaAs/InP SPADs is limited by the inherent characteristics of avalanche pro-cess and the growth quality of InGaAs/InP materials.It is difficult to ensure high detection efficiency while the dark count rate is controlled within a certain range at present.In this paper,we fabricated a device with a thick InGaAs absorption region and an anti-reflection layer.The quantum efficiency of this device reaches 83.2%.We characterized the single-photon performance of the device by a quenching circuit consisting of parallel-balanced InGaAs/InP single photon detectors and single-period sinus-oidal pulse gating.The spike pulse caused by the capacitance effect of the device is eliminated by using the characteristics of parallel balanced common mode signal elimination,and the detection of small avalanche pulse amplitude signal is realized.The maximum detection efficiency is 55.4%with a dark count rate of 43.8 kHz and a noise equivalent power of 6.96×10^(−17 )W/Hz^(1/2) at 247 K.Compared with other reported detectors,this SPAD exhibits higher SPDE and lower noise-equivalent power at a higher cooling temperature.

Numerical analysis of In_(0.53) Ga_(0.47) As/InP single photon avalanche diodes

A rigorous theoretical model for Ino.53Gao.47As/InP single photon avalanche diode is utilized to investigate the dependences of single photon quantum efficiency and dark count probability on structure and operation condition. In the model, low field impact ionizations in charge and absorption layers are allowed, while avalanche breakdown can occur only in the multiplication layer. The origin of dark counts is discussed and the results indicate that the dominant mechanism that gives rise to dark counts depends on both device structure and operating condition. When the multiplication layer is thicker than a critical thickness or the temperature is higher than a critical value, generation-recombination in the absorption layer is the dominative mechanism; otherwise band-to-band tunneling in the multiplication layer dominates the dark counts. The thicknesses of charge and multiplication layers greatly affect the dark count and the peak single photon quantum efficiency and increasing the multiplication layer width may reduce the dark count probability and increase the peak single photon quantum efficiency. However, when the multiplication layer width exceeds 1 μm, the peak single photon quantum efficiency increases slowly and it is finally saturated at the quantum efficiency of the single photon avalanche diodes.

Model and data of optically controlled tunable capacitor in silicon single-photon avalanche diode

This paper reports the photocapacitance effect of silicon-based single-photon avalanche diodes(SPADs),and the frequency scattering phenomenon of capacitance.The test results of the small-signal capacitance-voltage method show that light can cause the capacitance of a SPAD device to increase under low-frequency conditions,and the photocapacitance exhibits frequency-dependent characteristics.Since the devices are fabricated based on the standard bipolar-CMOS-DMOS process,this study attributes the above results to the interfacial traps formed by Si-SiO_(2),and the illumination can effectively reduce the interfacial trap lifetime,leading to changes in the junction capacitance inside the SPAD.Accordingly,an equivalent circuit model considering the photocapacitance effect is also proposed in this paper.Accurate analysis of the capacitance characteristics of SPAD has important scientific significance and application value for studying the energy level distribution of device interface defect states and improving the interface quality.

Total dose test with γ-ray for silicon single photon avalanche diodes

Gamma-ray(γ-ray)radiation for silicon single photon avalanche diodes(Si SPADs)is evaluated,with total dose of 100 krad(Si)and dose rate of 50 rad(Si)/s by using 60Co as theγ-ray radiation source.The breakdown voltage,photocurrent,and gain have no obvious change after the radiation.However,both the leakage current and dark count rate increase by about one order of magnitude above the values before the radiation.Temperature-dependent current-voltage measurement results indicate that the traps caused by radiation function as generation and recombination centers.Both leakage current and dark count rate can be almost recovered after annealing at 200℃for about 2 hours,which verifies the radiation damage mechanics.

Active quenching circuit for a InGaAs single-photon avalanche diode

We present a novel gated operation active quenching circuit （AQC）. In order to simulate the quenching circuit a complete SPICE model of a InGaAs SPAD is set up according to the I-V characteristic measurement resuits of the detector. The circuit integrated with a ROIC （readout integrated circuit） is fabricated in an CSMC 0.5 μm CMOS process and then hybrid packed with the detector. Chip measurement results show that the functionality of the circuit is correct and the performance is suitable for practical system applications.

Determination of breakdown voltage of In_(0.53)Ga_(0.47)As/InP single photon avalanche diodes

We examine the saturation of relative current gain of Ino.53Gao.47As/InP single photon avalanche diodes （SPADs） operated in Geiger mode. The punch-through voltage and breakdown voltage of the SPADs can be measured using a simple and accurate method. The analysis method is temperature-independent and can be applied to most SPADs.

Tunneling in submicron CMOS single-photon avalanche diodes

Tunneling is studied in two main single-photon avalanche diode （SPAD） topologies, which are r^-tub guard ring （NTGR） and p-tub guard ring （PTGR）. Device sinmlation, I - V measurements, and dark count calculations and measurements demonstrate that tunneling is the main source of noise in NTGR, but it is less dominant in PTGR SPADs. All structures are characterized with respect to dark noise, photon detection probability, tinting jitter, afterpulsing probability, and breakdown voltage. Noise performmme is disturbed because of tunneling, whereas jitter performance is disturbed because of the short diffusion time of photo-generated minority carriers in NTGR SPADs. The maximum photon detection probability is enhanced because of an improvement in absorption thickness.

An accurate simulation model for single-photon avalanche diodes including important statistical effects

An accurate and complete circuit simulation model for single-photon avalanche diodes （SPADs） is presented. The derived model is not only able to simulate the static DC and dynamic AC behaviors of an SPAD operating in Geiger-mode, but also can emulate the second breakdown and the forward bias behaviors. In particular, it considers important statistical effects, such as dark-counting and after-pulsing phenomena. The developed model is implemented using the Verilog-A description language and can be directly performed in commercial simulators such as Cadence Spectre. The Spectre simulation results give a very good agreement with the experimental results reported in the open literature. This model shows a high simulation accuracy and very fast simulation rate.

Single-photon laser methane detection methodology and initial validation

Responding to the urgency of remote sensing for monitoring large concentrations of methane leakage,a high-speed modulation continuous laser methane leakage remote methodology based on a near-infrared single-photon avalanche diode detector(SPAD)and a lower power distributed feedback laser was developed.Based on the proposed laser modulation and time-correlated single-photon counting method,the method could simultaneously detect the methane concentration and background target distance.The effects of SPAD dead time and after-pulse probability on the intensity of methane spectra were investigated.The proposed ranging and methane sensing method was also demonstrated by conducting outfield observation through the verification system.The measured methane absorption spectral intensity was verified and consistent with theoretical value.The initial validation results provide a new scheme for subsequent single-photon gas detection,and reference for subsequent methane monitoring equipment development.

GHz photon-number resolving detection with high detection efficiency and low noise by ultra-narrowband interference circuits

We demonstrate the photon-number resolution(PNR)capability of a 1.25 GHz gated InGaAs single-photon avalanche photodiode(APD)that is equipped with a simple,low-distortion ultra-narrowband interference circuit for the rejection of its background capacitive response.Through discriminating the avalanche current amplitude,we are able to resolve up to four detected photons in a single detection gate with a detection efficiency as high as 45%.The PNR capability is limited by the avalanche current saturation,and can be increased to five photons at a lower detection efficiency of 34%.The PNR capability,combined with high efficiency and low noise,will find applications in quantum information processing technique based on photonic qubits.

Compact SPAD pixels with fast and accurate photon counting in the analog domain

A compact pixel for single-photon detection in the analog domain is presented. The pixel integrates a single-photon avalanche diode(SPAD), a passive quenching & active recharging circuit(PQARC), and an analog counter for fast and accurate sensing and counting of photons. Fabricated in a standard 0.18 μm CMOS technology, the simulated and experimental results reveal that the dead time of the PQARC is about 8 ns and the maximum photon-counting rate can reach 125 Mcps(counting per second). The analog counter can achieve an 8-bit counting range with a voltage step of 6.9 mV. The differential nonlinearity(DNL) and integral nonlinearity(INL) of the analog counter are within the ± 0.6 and ± 1.2 LSB, respectively, indicating high linearity of photon counting. Due to its simple circuit structure and compact layout configuration, the total area occupation of the presented pixel is about 1500 μm^(2), leading to a high fill factor of 9.2%. The presented in-pixel front-end circuit is very suitable for the high-density array integration of SPAD sensors.

Quick single-photon detector with many avalanche photo diodes working on the time division

Due to the limit of response speed of the present single-photon detector, the code rate is still too low to come into practical use for the present quantum key distribution （QKD） system. A new idea is put up to design a quick single-photon detector. This quick single-photon detector is composed of a multi-port optic-fiber splitter and many avalanche photo diodes （APDs）. All of the ports with APDs work on the time division and cooperate with a logic discriminating and deciding unit driven by the clock signal. The operation frequency lies on the number N of ports, and can reach N times of the conventional single-photon detector. The single-photon prompt detection can come true for high repetition-rate pulses. The applying of this detector will largely raise the code rate of the OKD. and boost the commercial use.

Study of the influence of virtual guard ring width on the performance of SPAD detectors in 180 nm standard CMOS technology

The influence of the virtual guard ring width(GRW)on the performance of the p-well/deep n-well single-photon avalanche diode(SPAD)in a 180 nm standard CMOS process was investigated.TCAD simulation demonstrates that the electric field strength and current density in the guard ring are obviously enhanced when GRW is decreased to 1μm.It is experimentally found that,compared with an SPAD with GRW=2μm,the dark count rate(DCR)and afterpulsing probability(AP)of the SPAD with GRW=1μm is significantly increased by 2.7 times and twofold,respectively,meanwhile,its photon detection probability(PDP)is saturated and hard to be promoted at over 2 V excess bias voltage.Although the fill factor(FF)can be enlarged by reducing GRW,the dark noise of devices is negatively affected due to the enhanced trap-assisted tunneling(TAT)effect in the 1μm guard ring region.By comparison,the SPAD with GRW=2μm can achieve a better trade-off between the FF and noise performance.Our study provides a design guideline for guard rings to realize a low-noise SPAD for large-array applications.

Advances in InGaAs/InP single-photon detector systems for quantum communication

Single-photon detectors(SPDs)are the most sensitive instruments for light detection.In the near-infrared range,SPDs based on III–V compound semiconductor avalanche photodiodes have been extensively used during the past two decades for diverse applications due to their advantages in practicality including small size,low cost and easy operation.In the past decade,the rapid developments and increasing demands in quantum information science have served as key drivers to improve the device performance of single-photon avalanche diodes and to invent new avalanche quenching techniques.This Review aims to introduce the technology advances of InGaAs/InP single-photon detector systems in the telecom wavelengths and the relevant quantum communication applications,and particularly to highlight recent emerging techniques such as high-frequency gating at GHz rates and free-running operation using negative-feedback avalanche diodes.Future perspectives of both the devices and quenching techniques are summarized.

Double balanced differential configuration for high speed InGaAs/InP single photon detector at telecommunication wavelengths

In this paper,we present an innovative method of double balanced differential configuration,in which two adjacent single photon avalanche diodes(SPADs)from the same wafer are configured as the first balanced structure,and the output signal from the first balanced stage is subtracted by the attenuated gate driving signal as the second balanced stage.The compact device is cooled down to 236 K to be characterized.At a gate repetition rate of 400 MHz and a1 550 nm laser repetition rate of 10 MHz,the maximum photon detection efficiency of 13.5%can be achieved.The dark count rate is about 10-4 ns-1 at photon detection efficiency of 10%.The afterpulsing probability decreases with time exponentially.It is shown that this configuration is effective to discriminate the ultra-weak avalanche signal in high speed gating rates.

Quantifying backflash radiation to prevent zero-error attacks in quantum key distribution

Single-photon avalanche diodes(SPADs)are the most widespread commercial solution for single-photon counting in quantum key distribution applications.However,the secondary photon emission that arises from the avalanche of charge carriers that occurs during the detection of a photon may be exploited by an eavesdropper to gain information without inducing errors in the transmission key.In this paper,we characterize such backflash light in gated InGaAs/InP SPADs and discuss its spectral and temporal characterization for different detector models and different operating parameters.We qualitatively bound the maximum information leakage due to backflash light and propose solutions for preventing such leakage.