Boron-doped zinc oxide transparent （BZO） films were prepared by sol-gel method. The effect of pyrolysis temperature on the crystallization behavior and properties was systematically investigated. XRD patterns reveal...Boron-doped zinc oxide transparent （BZO） films were prepared by sol-gel method. The effect of pyrolysis temperature on the crystallization behavior and properties was systematically investigated. XRD patterns revealed that the BZO films had wurtzite structure with a preferential growth orientation along the c-axis. With the increase of pyrolysis temperature, the particle size and surface roughness of the BZO films increased, suggesting that pyrolysis temperature is the critical factor for determining the crystallization behavior of the BZO films. Moreover, the carrier concentration and the carrier mobility increased with increasing the pyrolysis temperature, and the mean transmittance for every film is over 90% in the visible range.展开更多
We have fabricated the epitaxial Nb-doped SrTiO3(NbSTO) thin films on Si substrates using a TiN film as the buffer layer.The oxygen-treatment and temperature dependence of electrical properties has been investigated.O...We have fabricated the epitaxial Nb-doped SrTiO3(NbSTO) thin films on Si substrates using a TiN film as the buffer layer.The oxygen-treatment and temperature dependence of electrical properties has been investigated.Oxygen treatment showed the surface change of NbSTO films has immense influence on the resistance switching.The resistance ratio of two resistance states decreased after oxygen treatment.With tested-temperature rising,the resistance and resistance ratio of two resistance states increased.The resistance switching of Pt/NbSTO junction as a function of oxygen-treatment and temperature can be explained by the charge trapping and detrapping process in the Pt/NbSTO interface,which will help understand the resistance switching mechanism of oxides.展开更多
We report the Meissner effect studies on an Fe Se thin film grown on Nb-doped Sr Ti O3 substrate by molecular beam epitaxy. Two-coil mutual inductance measurement clearly demonstrates the onset of diamagnetic screenin...We report the Meissner effect studies on an Fe Se thin film grown on Nb-doped Sr Ti O3 substrate by molecular beam epitaxy. Two-coil mutual inductance measurement clearly demonstrates the onset of diamagnetic screening at 65 K, which is consistent with the gap opening temperature determined by previous angle-resolved photoemission spectroscopy results. The applied magnetic field causes a broadening of the superconducting transition near the onset temperature, which is the typical behavior for quasi-two-dimensional superconductors. Our results provide direct evidence that Fe Se thin film grown on Nb-doped Sr Ti O3 substrate has an onset TC* 65 K,which is the highest among all iron-based superconductors discovered so far.展开更多
Highly conductive boron-doped hydrogenated microcrystalline silicon （μc-Si： H） films and solar cells are pre- pared by plasma enhanced chemical vapour deposition （PECVD）. The effects of diborane concentration, t...Highly conductive boron-doped hydrogenated microcrystalline silicon （μc-Si： H） films and solar cells are pre- pared by plasma enhanced chemical vapour deposition （PECVD）. The effects of diborane concentration, thickness and substrate temperature on the growth and properties of B-doped layers and the performance of solar cells with high deposited rate i-layers are investigated. With the optimum p-layer deposition parameters, a higher efficiency of 5.5% is obtained with 0.78nm/s deposited i-layers. In addition, the carriers transport mechanism of p-type μc-Si： H films is discussed.展开更多
文摘Boron-doped zinc oxide transparent （BZO） films were prepared by sol-gel method. The effect of pyrolysis temperature on the crystallization behavior and properties was systematically investigated. XRD patterns revealed that the BZO films had wurtzite structure with a preferential growth orientation along the c-axis. With the increase of pyrolysis temperature, the particle size and surface roughness of the BZO films increased, suggesting that pyrolysis temperature is the critical factor for determining the crystallization behavior of the BZO films. Moreover, the carrier concentration and the carrier mobility increased with increasing the pyrolysis temperature, and the mean transmittance for every film is over 90% in the visible range.
基金supported by the National Natural Science Foundation of China(Grant No 11004251)the Basic Foundation of China University of Petroleum(Beijing)(Grant No.01JB0007)the Development Foundation of China University of Petroleum(Beijing)(Grant No.01JB0021)
文摘We have fabricated the epitaxial Nb-doped SrTiO3(NbSTO) thin films on Si substrates using a TiN film as the buffer layer.The oxygen-treatment and temperature dependence of electrical properties has been investigated.Oxygen treatment showed the surface change of NbSTO films has immense influence on the resistance switching.The resistance ratio of two resistance states decreased after oxygen treatment.With tested-temperature rising,the resistance and resistance ratio of two resistance states increased.The resistance switching of Pt/NbSTO junction as a function of oxygen-treatment and temperature can be explained by the charge trapping and detrapping process in the Pt/NbSTO interface,which will help understand the resistance switching mechanism of oxides.
基金supported by the National Natural Science Foundation and Ministry of Science and Technology of China(2015CB921000 and 2012CB921402)Yihua Wang is partially supported by the Urbanek Fellowship of the Department of Applied Physics at Stanford UniversityK.A.Moler is supported by the Department of Energy,Office of Science,Basic Energy Sciences,Materials Sciences and Engineering Division,under Contract DEAC02-76SF00515
文摘We report the Meissner effect studies on an Fe Se thin film grown on Nb-doped Sr Ti O3 substrate by molecular beam epitaxy. Two-coil mutual inductance measurement clearly demonstrates the onset of diamagnetic screening at 65 K, which is consistent with the gap opening temperature determined by previous angle-resolved photoemission spectroscopy results. The applied magnetic field causes a broadening of the superconducting transition near the onset temperature, which is the typical behavior for quasi-two-dimensional superconductors. Our results provide direct evidence that Fe Se thin film grown on Nb-doped Sr Ti O3 substrate has an onset TC* 65 K,which is the highest among all iron-based superconductors discovered so far.
基金the State Key Development Program for Basic Research of China(No.2006CB202601)the Basic Research Project of Henan Province(No.072300410140)~~
文摘Highly conductive boron-doped hydrogenated microcrystalline silicon （μc-Si： H） films and solar cells are pre- pared by plasma enhanced chemical vapour deposition （PECVD）. The effects of diborane concentration, thickness and substrate temperature on the growth and properties of B-doped layers and the performance of solar cells with high deposited rate i-layers are investigated. With the optimum p-layer deposition parameters, a higher efficiency of 5.5% is obtained with 0.78nm/s deposited i-layers. In addition, the carriers transport mechanism of p-type μc-Si： H films is discussed.
