利用对氧缺陷的TiO_2-B材料进行密度泛函理论的计算,阐述了氧空穴对于TiO_2-B材料的电化学性质的影响。计算研究主要聚焦于缺陷材料的锂离子迁移和电子导电性等基本问题。计算结果表明在低锂离子浓度下(x(Li/Ti)≤0.25),相比于无缺陷的T...利用对氧缺陷的TiO_2-B材料进行密度泛函理论的计算,阐述了氧空穴对于TiO_2-B材料的电化学性质的影响。计算研究主要聚焦于缺陷材料的锂离子迁移和电子导电性等基本问题。计算结果表明在低锂离子浓度下(x(Li/Ti)≤0.25),相比于无缺陷的TiO_2-B,氧缺陷TiO_2-B有着更高的插入电压和更低的b轴方向迁移活化能,意味着锂离子的嵌入也更容易,这对于可充电电池的充电过程是有利的。而在高浓度下(x(Li/Ti)=1),锂饱和的氧缺陷TiO_2-B相较于无缺陷的TiO_2-B有着较低的插入电压,更有利于锂离子的脱嵌过程,这对于可充电电池的放电过程也是有利的。电子结构计算表明缺陷材料的禁带宽度在1.0-2.0 e V之间,低于无缺陷的材料的3.0 e V。主要态密度贡献者是Ti-Ov-3d,并且随着氧空穴的增加它的强度也变得更强。这就表明氧缺陷TiO_2-B有更好的电子导电性。展开更多
By using the first-principles calculations, the electronic Structure and quantum transport properties of metallic carbon nanotubes with B/N pairs co-doping have been investigated. It is shown that the total energies o...By using the first-principles calculations, the electronic Structure and quantum transport properties of metallic carbon nanotubes with B/N pairs co-doping have been investigated. It is shown that the total energies of metallic carbon nanotubes are sensitive to the doping sites of the B/N pairs. The energy gaps of the doped metallic carbon nanotubes decrease with decreasing the concentration of the B/N pair not only along the tube axis but also around the tube. Moreover, the I-V characteristics and transmissions of the doped tubes are studied. Our results reveal that the conducting ability of the doped tube decreases with increasing the concentrations of the B/N pairs due to symmetry breaking of the system. This fact opens a new way to modulate band structures of metallic carbon nanotubes by doping B/N pair with suitable concentration and the novel characteristics are potentially useful in future applications.展开更多
Using the first-principles calculations, we investigate the electronic band structure and the quantum transport properties of metallic carbon nanotubes （MCNTs） with B/N pair co-doping. The results about formation en...Using the first-principles calculations, we investigate the electronic band structure and the quantum transport properties of metallic carbon nanotubes （MCNTs） with B/N pair co-doping. The results about formation energy show that the B/N pair co-doping configuration is a most stable structure. We find that the electronic structure and the transport properties are very sensitive to the doping concentration of the B/N pairs in MCNTs, where the energy gaps increase with doping concentration increasing both along the tube axis and around the tube, because the mirror symmetry of MCNT is broken by doping B/N pairs. In addition, we discuss conductance dips of the transmission spectrum of doped MCNTs. These unconventional doping effects could be used to design novel nanoelectronic devices.展开更多
基金supported by the State Key Program of Natural Science Foundation of Tianjin,China(13JCZDJC26800)Foundation of State Key Laboratory of Coal Conversion,China(J15-16-908)Natural Science Foundation of Shanxi Province,China(2013011012-8)~~
文摘利用对氧缺陷的TiO_2-B材料进行密度泛函理论的计算,阐述了氧空穴对于TiO_2-B材料的电化学性质的影响。计算研究主要聚焦于缺陷材料的锂离子迁移和电子导电性等基本问题。计算结果表明在低锂离子浓度下(x(Li/Ti)≤0.25),相比于无缺陷的TiO_2-B,氧缺陷TiO_2-B有着更高的插入电压和更低的b轴方向迁移活化能,意味着锂离子的嵌入也更容易,这对于可充电电池的充电过程是有利的。而在高浓度下(x(Li/Ti)=1),锂饱和的氧缺陷TiO_2-B相较于无缺陷的TiO_2-B有着较低的插入电压,更有利于锂离子的脱嵌过程,这对于可充电电池的放电过程也是有利的。电子结构计算表明缺陷材料的禁带宽度在1.0-2.0 e V之间,低于无缺陷的材料的3.0 e V。主要态密度贡献者是Ti-Ov-3d,并且随着氧空穴的增加它的强度也变得更强。这就表明氧缺陷TiO_2-B有更好的电子导电性。
基金supported by the Major Research Plan from the Ministry of Science and Technology of China (Grant No. 2011CB921900)the China Postdoctoral Science Special Foundation (Grant No. 201003009)+2 种基金the China Postdoctoral Science Foundation (GrantNo. 20090460145)the Fundamental Research Funds for the Central Universities (Grant No. 201012200053)the Science and Technology Program of Hunan Province of China (Grant No. 2010DFJ411)
文摘By using the first-principles calculations, the electronic Structure and quantum transport properties of metallic carbon nanotubes with B/N pairs co-doping have been investigated. It is shown that the total energies of metallic carbon nanotubes are sensitive to the doping sites of the B/N pairs. The energy gaps of the doped metallic carbon nanotubes decrease with decreasing the concentration of the B/N pair not only along the tube axis but also around the tube. Moreover, the I-V characteristics and transmissions of the doped tubes are studied. Our results reveal that the conducting ability of the doped tube decreases with increasing the concentrations of the B/N pairs due to symmetry breaking of the system. This fact opens a new way to modulate band structures of metallic carbon nanotubes by doping B/N pair with suitable concentration and the novel characteristics are potentially useful in future applications.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.10325415 and 50504017)the Natural Science Foundation of Hunan Province,China(Grant No.07JJ3102)+1 种基金the Scientific Research Fund of Hunan Provincial Education Department,China(Grant No.10C1171)the Science Development Foundation of Central South University,China(Grant Nos.08SDF02 and 09SDF09)
文摘Using the first-principles calculations, we investigate the electronic band structure and the quantum transport properties of metallic carbon nanotubes （MCNTs） with B/N pair co-doping. The results about formation energy show that the B/N pair co-doping configuration is a most stable structure. We find that the electronic structure and the transport properties are very sensitive to the doping concentration of the B/N pairs in MCNTs, where the energy gaps increase with doping concentration increasing both along the tube axis and around the tube, because the mirror symmetry of MCNT is broken by doping B/N pairs. In addition, we discuss conductance dips of the transmission spectrum of doped MCNTs. These unconventional doping effects could be used to design novel nanoelectronic devices.
