A novel solid state cathodoluminescence(SSCL) device(the device has a structure of ITO/SiO2/Alq3/SiO2/Al) is fabricated using organic materials as the fluorescent film sandwiched between two SiO2 layers.When alternati...A novel solid state cathodoluminescence(SSCL) device(the device has a structure of ITO/SiO2/Alq3/SiO2/Al) is fabricated using organic materials as the fluorescent film sandwiched between two SiO2 layers.When alternating current(AC) voltage is applied to this device,uniform emissions are observed.When the voltage is 50 V,a longer wavelength emission(522 nm) is obtained,but the shorter wavelength emission(465 nm) is dominant when the voltage is 76 V.The origins of these emissions are discussed.The interface formed between SiO2 and tris-(8-hydroquinoline) aluminum(Alq3) of SSCL device was investigated by using X-ray photoelectron spectroscopy(XPS).Analyses of the XPS spectra reveal a deep diffusion of the indium into the interface.On the other hand,the interaction between indium and Alq3 occurs at the interface and results in the formation of a carbon-oxygen-metal(In or Al) complex in the contact region.This effect causes a luminescence quenching in the SSCL device.展开更多
Single crystals of huntite type double borates possess excellent physical and chemical properties and are applied in laser optics.Substituted with various rare earths and Ga 3+ ,Cr 3+ or Sc 3+ ions the properties of t...Single crystals of huntite type double borates possess excellent physical and chemical properties and are applied in laser optics.Substituted with various rare earths and Ga 3+ ,Cr 3+ or Sc 3+ ions the properties of these borates can be improved. [1] For the first time double borates RGa 3(BO 3) 4(R=Y 3+ ,Sm 3+ ,Eu 3+ ,Gd 3+ ,Tb 3+ and Dy 3+ )were synthesised by Blasse and Bril [2] at 750℃. The goal of the present work is to study the solid state reactions in the R 2O 3∶3Ga 2O 3∶4B 2O 3(R=La 3+ ,Y 3+ ,Ho 3+ ,Yb 3+ )systems.Such reactions can lead to RGa 3(BO 3) 4 formation. Reagent grade oxide powders were used as reactants and mixed together in desired rations in acetone.Then differential thermal analysis(DTA)was used to study the formations of borates and changes in structure of mixtures heated up to 1000℃.In addition pellets were prepared by using 15mPa pressure and sintered at different temperatures from 600℃ to 1100℃ for 20 hours in order to study the reactions by IR and X ray.展开更多
基金supported by the National Natural Science Foundation of China (Grant No. 60806047)the Natural Science Foundation Project of CQ CSTC (Grant No. 2009BB2237)+1 种基金the Science and Technology of Chongqing Municipal Education Commission (Grant No. KJ080816)the Natural Science Foundation of Chongqing Normal University (Grant Nos. 07XLB015 and 08XLS12)
文摘A novel solid state cathodoluminescence(SSCL) device(the device has a structure of ITO/SiO2/Alq3/SiO2/Al) is fabricated using organic materials as the fluorescent film sandwiched between two SiO2 layers.When alternating current(AC) voltage is applied to this device,uniform emissions are observed.When the voltage is 50 V,a longer wavelength emission(522 nm) is obtained,but the shorter wavelength emission(465 nm) is dominant when the voltage is 76 V.The origins of these emissions are discussed.The interface formed between SiO2 and tris-(8-hydroquinoline) aluminum(Alq3) of SSCL device was investigated by using X-ray photoelectron spectroscopy(XPS).Analyses of the XPS spectra reveal a deep diffusion of the indium into the interface.On the other hand,the interaction between indium and Alq3 occurs at the interface and results in the formation of a carbon-oxygen-metal(In or Al) complex in the contact region.This effect causes a luminescence quenching in the SSCL device.
文摘Single crystals of huntite type double borates possess excellent physical and chemical properties and are applied in laser optics.Substituted with various rare earths and Ga 3+ ,Cr 3+ or Sc 3+ ions the properties of these borates can be improved. [1] For the first time double borates RGa 3(BO 3) 4(R=Y 3+ ,Sm 3+ ,Eu 3+ ,Gd 3+ ,Tb 3+ and Dy 3+ )were synthesised by Blasse and Bril [2] at 750℃. The goal of the present work is to study the solid state reactions in the R 2O 3∶3Ga 2O 3∶4B 2O 3(R=La 3+ ,Y 3+ ,Ho 3+ ,Yb 3+ )systems.Such reactions can lead to RGa 3(BO 3) 4 formation. Reagent grade oxide powders were used as reactants and mixed together in desired rations in acetone.Then differential thermal analysis(DTA)was used to study the formations of borates and changes in structure of mixtures heated up to 1000℃.In addition pellets were prepared by using 15mPa pressure and sintered at different temperatures from 600℃ to 1100℃ for 20 hours in order to study the reactions by IR and X ray.
