We report a distinctive way for designing lead-free films with high energy storage performance.By inserting different single perovskite cells into Bi4 Ti3 O12,P-E hysteresis loops present larger maximum polarization,h...We report a distinctive way for designing lead-free films with high energy storage performance.By inserting different single perovskite cells into Bi4 Ti3 O12,P-E hysteresis loops present larger maximum polarization,higher breakdown strength and smaller slim-shaped area.We prepared 0.15 Bi7 Fe3 Ti3 O21-0.5 Bi4 Sr3 Ti6 O21-0.35 Bi4 Ba3 Ti6 O21 solid solution ferroelectric films employing the sol-gel method,and obtained high energy storage density of 132.5 J/cm3 and efficiency of 78.6%while maintaining large maximum polarization of 112.3μC/cm2 and a high breakdown electric field of 3700 kV/cm.Moreover,the energy storage density and efficiency exhibit stability over the temperature range from 20℃to 125℃,and anti-fatigue stability maintains up to 108 cycles.The films with a simple preparation method and high energy storage performance are likely to become candidates for high-performance energy storage materials.展开更多
Polycrystalline Bi_4Ti_3O_(12) thin films with various fractions of a-axis, c-axis and random orientations have been grown on Pt(111)/Ti/Si O_2/Si substrates by laser-ablation under different kinetic growth conditions...Polycrystalline Bi_4Ti_3O_(12) thin films with various fractions of a-axis, c-axis and random orientations have been grown on Pt(111)/Ti/Si O_2/Si substrates by laser-ablation under different kinetic growth conditions. The relationship between the structure and ferroelectric property of the films was investigated, so as to explore the possibility of enhancing ferroelectric polarization by controlling the preferred orientation. The structural characterization indicated that the large growth rate and high oxygen background pressure were both favorable for the growth of non-c-axis oriented grains in the Bi_4Ti_3O_(12) thin films. The films with high fractions of a-axis and random orientations, i e, f(a-sxis) = 28.3% and f(random) = 69.6%, could be obtained at the deposition temperature of 973 K, oxygen partial pressure of 15 Pa and laser fluence of 4.6 J/cm^2, respectively. It was also noted that the variation of ferroelectric polarization was in accordance with the evolution non-c-axis orientation. A large value of remanent polarization(2 Pr = 35.5 μC/cm^2) was obtained for the Bi_4Ti_3O_(12) thin films with significant non-c-axis orientation, even higher than that of rare-earth-doped Bi_4Ti_3O_(12) films.展开更多
基金ACKNOWLEDGMENTS This work was supported by the National Natural Science Foundation of China （No.61308095）, China Postdoctoral Science Foundation （No.2013M531286）, the Key Laboratory of Preparation and Application Environmentally Friendly Materials of the Ministry of Education of China, and the Science Development Project of Jilin Province No.20130102004JC）. （No.20130522071JH and
基金Supported by the National Natural Science Foundation of China(Grant Nos.11864028 and 12074204)。
文摘We report a distinctive way for designing lead-free films with high energy storage performance.By inserting different single perovskite cells into Bi4 Ti3 O12,P-E hysteresis loops present larger maximum polarization,higher breakdown strength and smaller slim-shaped area.We prepared 0.15 Bi7 Fe3 Ti3 O21-0.5 Bi4 Sr3 Ti6 O21-0.35 Bi4 Ba3 Ti6 O21 solid solution ferroelectric films employing the sol-gel method,and obtained high energy storage density of 132.5 J/cm3 and efficiency of 78.6%while maintaining large maximum polarization of 112.3μC/cm2 and a high breakdown electric field of 3700 kV/cm.Moreover,the energy storage density and efficiency exhibit stability over the temperature range from 20℃to 125℃,and anti-fatigue stability maintains up to 108 cycles.The films with a simple preparation method and high energy storage performance are likely to become candidates for high-performance energy storage materials.
基金Funded by the International Science and Technology Cooperation Project of Hubei Province(2016AHB008)the Natural Science Foundation of Hubei Province(2015CFB724,2016CFA006)+1 种基金the National Natural Science Foundation of China(51272195,51521001)the National Key Research and Development Program of China(2017YFB0310400)
文摘Polycrystalline Bi_4Ti_3O_(12) thin films with various fractions of a-axis, c-axis and random orientations have been grown on Pt(111)/Ti/Si O_2/Si substrates by laser-ablation under different kinetic growth conditions. The relationship between the structure and ferroelectric property of the films was investigated, so as to explore the possibility of enhancing ferroelectric polarization by controlling the preferred orientation. The structural characterization indicated that the large growth rate and high oxygen background pressure were both favorable for the growth of non-c-axis oriented grains in the Bi_4Ti_3O_(12) thin films. The films with high fractions of a-axis and random orientations, i e, f(a-sxis) = 28.3% and f(random) = 69.6%, could be obtained at the deposition temperature of 973 K, oxygen partial pressure of 15 Pa and laser fluence of 4.6 J/cm^2, respectively. It was also noted that the variation of ferroelectric polarization was in accordance with the evolution non-c-axis orientation. A large value of remanent polarization(2 Pr = 35.5 μC/cm^2) was obtained for the Bi_4Ti_3O_(12) thin films with significant non-c-axis orientation, even higher than that of rare-earth-doped Bi_4Ti_3O_(12) films.
基金This work was jointly supported by the National Natural Science Foundation of China(51972288 and 51672258)the Fundamental Research Funds for the Central Universities(2652018290).
