用丝网印刷法在印有Pt电极的Al_2O_3基片上制备了BaTiO_3(BT)掺杂Bi0.5(Na0.82K0.18)0.5TiO_3(BNKT)厚膜,研究了BT掺杂对BNKT厚膜相结构、微观形貌、介电、压电及铁电性能的影响。研究发现,(1-x)BNKT-x BaTiO_3厚膜体系的准同型相界(MPB...用丝网印刷法在印有Pt电极的Al_2O_3基片上制备了BaTiO_3(BT)掺杂Bi0.5(Na0.82K0.18)0.5TiO_3(BNKT)厚膜,研究了BT掺杂对BNKT厚膜相结构、微观形貌、介电、压电及铁电性能的影响。研究发现,(1-x)BNKT-x BaTiO_3厚膜体系的准同型相界(MPB)位于3mol%<x<7mol%,当BT掺杂量为5mol%时,厚膜的介电、压电及铁电性能达到最佳,介电常数εr=793,压电常数d33=72 p C/N,剩余极化强度Pr=4.35μC/cm2,应变值达到了0.817%,但同时5mol%的BT掺杂使厚膜的介电损耗tanδ由1.1%增加到了6.2%,也使矫顽场EC由35.77 k V/cm增加到53.72 k V/cm。最后将制备的95BNKT-5BT压电厚膜制成扬声器振膜,结合设计的驱动电路,研制出了用于便携式电子设备的无铅压电扬声器。展开更多
Bi0.5(Na0.85K0.15)0.5TiO3(BNKT15) thin films were synthesized by metal-organic decomposition(MOD) at annealing temperatures of 650,680,710 and 740℃,and the effects of annealing temperature on the microstructure,diele...Bi0.5(Na0.85K0.15)0.5TiO3(BNKT15) thin films were synthesized by metal-organic decomposition(MOD) at annealing temperatures of 650,680,710 and 740℃,and the effects of annealing temperature on the microstructure,dielectric properties,remnant polarization(2Pr) and leakage current density were studied with X-ray diffractometer,atomic force microscope,precision impedance analyzer,ferroelectric analysis station and semiconductor parameter tester.The results show that the thin film annealed at 710℃ exhibits a typical perovskite structure without predominant orientation and a smooth surface with evenly distributed grains.2Pr value(67.4 μC/cm2 under 830 kV/cm) and the leakage current density(1.6×10-6 A/cm2 at 170 kV/cm) for BNKT15 thin film annealed at 710℃ are better than those for thin films annealed at other temperatures.展开更多
Sintered lead-free Bi_(0.5)(Na_(0.8)K_(0.2)T_(0.5)(Ti0:96Sn0:04TO_(3)ceramics(BNKTS)have been fabricated via a solid-state reaction.The effect of sintering temperature on the structural,morphological,dielectric,ferroe...Sintered lead-free Bi_(0.5)(Na_(0.8)K_(0.2)T_(0.5)(Ti0:96Sn0:04TO_(3)ceramics(BNKTS)have been fabricated via a solid-state reaction.The effect of sintering temperature on the structural,morphological,dielectric,ferroelectric and energy storage properties of BNKTS ceramics was investigated,and it was found that the electrical properties of the synthesized ceramics increased with the increase in the sintering temperature,and the highest values were achieved at 1100℃.The ceramics sintered at the optimized temperature of 1100℃exhibited the best physical,dielectric,ferroelectric and energy storage properties,namely,high density(the relative density,ρ=5:88 g.cm^(-3),approximate to 96.7%of the theoretical value),high densification factor(DF=0:93),high dielectric constant(ε_(r)=1215),low dielectric loss(tanδ=0:051),highest dielectric constant(ε_(max)=4335),high remanent polarization(Pr=9:5μC.cm^(-2),high coercive field(E_(c)=14:3 kV/cm),high energy storage density(0.12 J/cm^(3),and high energy storage efficiency(41.7%at 46.3 kV/cm).展开更多
文摘用丝网印刷法在印有Pt电极的Al_2O_3基片上制备了BaTiO_3(BT)掺杂Bi0.5(Na0.82K0.18)0.5TiO_3(BNKT)厚膜,研究了BT掺杂对BNKT厚膜相结构、微观形貌、介电、压电及铁电性能的影响。研究发现,(1-x)BNKT-x BaTiO_3厚膜体系的准同型相界(MPB)位于3mol%<x<7mol%,当BT掺杂量为5mol%时,厚膜的介电、压电及铁电性能达到最佳,介电常数εr=793,压电常数d33=72 p C/N,剩余极化强度Pr=4.35μC/cm2,应变值达到了0.817%,但同时5mol%的BT掺杂使厚膜的介电损耗tanδ由1.1%增加到了6.2%,也使矫顽场EC由35.77 k V/cm增加到53.72 k V/cm。最后将制备的95BNKT-5BT压电厚膜制成扬声器振膜,结合设计的驱动电路,研制出了用于便携式电子设备的无铅压电扬声器。
文摘采用原位溶胶–凝胶法制备xCoFe_2O_4/(1-x)Bi_(0.5)(Na_(0.8)K_(0.2))_(0.5)TiO_3(x为Co Fe_2O_4的摩尔分数,x=0.2,0.3,0.4)复合材料,研究磁性相CoFe_2O_4的含量对Co Fe_2O_4/Bi_(0.5)(Na_(0.8)K_(0.2))_(0.5)TiO_3复合材料结构、形貌及铁电性、铁磁性和磁电耦合性能的影响。结果表明,该复合材料中只存在CoFe_2O_4和Bi_(0.5)(Na_(0.8)K_(0.2))_(0.5)TiO_3两相;材料的饱和磁化强度和剩余磁化强度随Co Fe_2O_4含量增加而增大,而饱和极化强度和剩余极化强度随CoFe_2O_4含量增加而减小;当偏置磁场强度为72 k A/m时,0.3Co Fe_2O_4/0.7Bi_(0.5)(Na_(0.8)K_(0.2))_(0.5)TiO_3复合材料的磁电电压系数达11.8 m V/A。
基金Projects(10672139, 10825209, 50872117) supported by the National Natural Science Foundation of ChinaProject(207079) supported by the Key Program of Ministry of Education of China+3 种基金Project(07JJ5002) supported by the Natural Science Foundation of Hunan Province, ChinaProject(08C862) supported by Scientific Research Fund of Hunan Provincial Education Department, ChinaProject([2008]101) supported by Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education MinistryProject([2007]362) supported by Hunan Prestigious Furong Scholar Award, China
文摘Bi0.5(Na0.85K0.15)0.5TiO3(BNKT15) thin films were synthesized by metal-organic decomposition(MOD) at annealing temperatures of 650,680,710 and 740℃,and the effects of annealing temperature on the microstructure,dielectric properties,remnant polarization(2Pr) and leakage current density were studied with X-ray diffractometer,atomic force microscope,precision impedance analyzer,ferroelectric analysis station and semiconductor parameter tester.The results show that the thin film annealed at 710℃ exhibits a typical perovskite structure without predominant orientation and a smooth surface with evenly distributed grains.2Pr value(67.4 μC/cm2 under 830 kV/cm) and the leakage current density(1.6×10-6 A/cm2 at 170 kV/cm) for BNKT15 thin film annealed at 710℃ are better than those for thin films annealed at other temperatures.
基金This research was funded by Ministry of Education and Training under Grant No.B2019-DHH-13.
文摘Sintered lead-free Bi_(0.5)(Na_(0.8)K_(0.2)T_(0.5)(Ti0:96Sn0:04TO_(3)ceramics(BNKTS)have been fabricated via a solid-state reaction.The effect of sintering temperature on the structural,morphological,dielectric,ferroelectric and energy storage properties of BNKTS ceramics was investigated,and it was found that the electrical properties of the synthesized ceramics increased with the increase in the sintering temperature,and the highest values were achieved at 1100℃.The ceramics sintered at the optimized temperature of 1100℃exhibited the best physical,dielectric,ferroelectric and energy storage properties,namely,high density(the relative density,ρ=5:88 g.cm^(-3),approximate to 96.7%of the theoretical value),high densification factor(DF=0:93),high dielectric constant(ε_(r)=1215),low dielectric loss(tanδ=0:051),highest dielectric constant(ε_(max)=4335),high remanent polarization(Pr=9:5μC.cm^(-2),high coercive field(E_(c)=14:3 kV/cm),high energy storage density(0.12 J/cm^(3),and high energy storage efficiency(41.7%at 46.3 kV/cm).
