目的筛查恒河猴BST-2基因编码区单核苷酸多态性(coding-region single nucleotide polymorphism,c SNP),研究其对蛋白结构和功能的影响。方法提取恒河猴外周血RNA,RT-PCR扩增,单克隆测序比对,确定猴BST-2的c SNP位点;通过蛋白质结构分...目的筛查恒河猴BST-2基因编码区单核苷酸多态性(coding-region single nucleotide polymorphism,c SNP),研究其对蛋白结构和功能的影响。方法提取恒河猴外周血RNA,RT-PCR扩增,单克隆测序比对,确定猴BST-2的c SNP位点;通过蛋白质结构分析软件对蛋白结构进行分析;比较不同基因型猴体内SHIVSF162 p 3复制水平的差异。结果序列比对发现8个非同义突变位点;经Psipred软件预测,其中G41A、T128C、C129和A333C c SNP位点可影响BST-2蛋白二级结构。在SHIVSF162 p 3感染平台期,参考基因型猴(DLQ)病毒复制水平要高于GLQ型猴(P<0.05),其他基因型猴之间无显著差异。结论 c SNP(G41A)可能影响BST-2的抗病毒功能,这为后续研究提供参考信息。展开更多
Ba0.6Sr0.4TiO3 （BST） thin films with and without HfO 2 buffer layer were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. Dependences of HfO 2 thickness on the dielectric property and leakage curre...Ba0.6Sr0.4TiO3 （BST） thin films with and without HfO 2 buffer layer were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. Dependences of HfO 2 thickness on the dielectric property and leakage current of BST thin films were focused. The dielectric constant of BST thin films increased and then decreased with the increase of HfO 2 thickness, while the dielectric relaxation was gradually improved. The loss tangent and leakage current under positive bias decreased with the HfO 2 thickness increasing. The leakage current analysis based on the Schottky emission indicated an improvement of the BST/Pt interface with HfO 2 buffer layer. The loss tangent, tunability and figure of merit of optimized HfO 2 buffered BST thin film achieved 0.009 8, 21.91% （E max = 200 kV/cm）, 22.40 at 10 6 Hz, respectively.展开更多
文摘目的筛查恒河猴BST-2基因编码区单核苷酸多态性(coding-region single nucleotide polymorphism,c SNP),研究其对蛋白结构和功能的影响。方法提取恒河猴外周血RNA,RT-PCR扩增,单克隆测序比对,确定猴BST-2的c SNP位点;通过蛋白质结构分析软件对蛋白结构进行分析;比较不同基因型猴体内SHIVSF162 p 3复制水平的差异。结果序列比对发现8个非同义突变位点;经Psipred软件预测,其中G41A、T128C、C129和A333C c SNP位点可影响BST-2蛋白二级结构。在SHIVSF162 p 3感染平台期,参考基因型猴(DLQ)病毒复制水平要高于GLQ型猴(P<0.05),其他基因型猴之间无显著差异。结论 c SNP(G41A)可能影响BST-2的抗病毒功能,这为后续研究提供参考信息。
基金Project supported by the Foundation of the Education Commission of Shanghai Municipality (Grant Nos.07ZZ14, 08SG41)the National Natural Science Foundation of China (Grant No.50711130241)the Shanghai Rising Star Program (GrantNo.08QH14008)
文摘Ba0.6Sr0.4TiO3 （BST） thin films with and without HfO 2 buffer layer were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. Dependences of HfO 2 thickness on the dielectric property and leakage current of BST thin films were focused. The dielectric constant of BST thin films increased and then decreased with the increase of HfO 2 thickness, while the dielectric relaxation was gradually improved. The loss tangent and leakage current under positive bias decreased with the HfO 2 thickness increasing. The leakage current analysis based on the Schottky emission indicated an improvement of the BST/Pt interface with HfO 2 buffer layer. The loss tangent, tunability and figure of merit of optimized HfO 2 buffered BST thin film achieved 0.009 8, 21.91% （E max = 200 kV/cm）, 22.40 at 10 6 Hz, respectively.
