The ac impedance of Nb-doped semicon-ducting (Bao.72Pbo.28)TiO3 ceramics implanted with copper ions(200keV,6X1015 and 1X1017 ions/cm2) in the temperature range 25-320C and the frequency range 10 Hz -13MHz was measured...The ac impedance of Nb-doped semicon-ducting (Bao.72Pbo.28)TiO3 ceramics implanted with copper ions(200keV,6X1015 and 1X1017 ions/cm2) in the temperature range 25-320C and the frequency range 10 Hz -13MHz was measured. According to the change of impedance spectroscopy and the equivalent circuit model of semiconducting(Ba, Pb)TiO3 ceramics, the dependence of resistance of bulk and grain-boundary on temperature was analyzed. The results show that relatively low dose must be used to increase the magnitude of the positive temperature coeffieient of resistance(PTCR)effects in the cermmics. In addition,the effects of Cu ion implantation on the PTCR behavior of the ceramics was studied by raststance-tempera-ture measurement.展开更多
（Ba0.4Pb0.3）Sr0.3TiO3 thin films were fabricated via pulsed laser deposition （PLD） technique on Pt/TiO2/SiO2/Si substrate. The crystallization of the films was characterized by XRD and FSEM, and the experimental r...（Ba0.4Pb0.3）Sr0.3TiO3 thin films were fabricated via pulsed laser deposition （PLD） technique on Pt/TiO2/SiO2/Si substrate. The crystallization of the films was characterized by XRD and FSEM, and the experimental results suggested deposition parameters, especially the deposition temperature was the key factor in forming the perovskite structure. The dielectric properties of the film deposited with optimized parameters were studied by an Agilent 4294A impedance analyzer at 1 MHz. The dielectric constant was 772, and the loss tangent was 0.006. In addition, the well-shaped hysteresis loop also showed that the film had a well performance in ferroelectric. The saturated polarization P, remnant polarization Pr and coercive field E were about 4.6 μC/cm2, 2.5 μC/cm2 and 23 kV/cm （the coercive voltage is 0.7 V）, respectively. It is suggested the film should be a promising candidate for microwave applications and nonvolatile ferroelectric random access memories （NvFeRAMs）.展开更多
文摘The ac impedance of Nb-doped semicon-ducting (Bao.72Pbo.28)TiO3 ceramics implanted with copper ions(200keV,6X1015 and 1X1017 ions/cm2) in the temperature range 25-320C and the frequency range 10 Hz -13MHz was measured. According to the change of impedance spectroscopy and the equivalent circuit model of semiconducting(Ba, Pb)TiO3 ceramics, the dependence of resistance of bulk and grain-boundary on temperature was analyzed. The results show that relatively low dose must be used to increase the magnitude of the positive temperature coeffieient of resistance(PTCR)effects in the cermmics. In addition,the effects of Cu ion implantation on the PTCR behavior of the ceramics was studied by raststance-tempera-ture measurement.
基金the National Natural Science Foundation of China(No.60571009)
文摘（Ba0.4Pb0.3）Sr0.3TiO3 thin films were fabricated via pulsed laser deposition （PLD） technique on Pt/TiO2/SiO2/Si substrate. The crystallization of the films was characterized by XRD and FSEM, and the experimental results suggested deposition parameters, especially the deposition temperature was the key factor in forming the perovskite structure. The dielectric properties of the film deposited with optimized parameters were studied by an Agilent 4294A impedance analyzer at 1 MHz. The dielectric constant was 772, and the loss tangent was 0.006. In addition, the well-shaped hysteresis loop also showed that the film had a well performance in ferroelectric. The saturated polarization P, remnant polarization Pr and coercive field E were about 4.6 μC/cm2, 2.5 μC/cm2 and 23 kV/cm （the coercive voltage is 0.7 V）, respectively. It is suggested the film should be a promising candidate for microwave applications and nonvolatile ferroelectric random access memories （NvFeRAMs）.
