Effects of HfO_2 buffer layers on the dielectric property and leakage current of Ba_(0.6)Sr_(0.4)TiO_3 thin films by pulsed laser deposition

Ba0.6Sr0.4TiO3 （BST） thin films with and without HfO 2 buffer layer were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. Dependences of HfO 2 thickness on the dielectric property and leakage current of BST thin films were focused. The dielectric constant of BST thin films increased and then decreased with the increase of HfO 2 thickness, while the dielectric relaxation was gradually improved. The loss tangent and leakage current under positive bias decreased with the HfO 2 thickness increasing. The leakage current analysis based on the Schottky emission indicated an improvement of the BST/Pt interface with HfO 2 buffer layer. The loss tangent, tunability and figure of merit of optimized HfO 2 buffered BST thin film achieved 0.009 8, 21.91% （E max = 200 kV/cm）, 22.40 at 10 6 Hz, respectively.

Effect of (Ba_(0.6)Sr_(0.4))TiO_3(BST) Doping on Dielectric Properties of CaCu_3Ti_4O_(12)(CCTO)

The effect of （Ba（0.6）Sr（0.4））TiO3（BST） addition on dielectric properties of CaCu3Ti4O（12） （CCTO） ceramic was investigated. Ceramic samples with the chemical formula （1-x）CaCu3Ti4O（12） ＋ x（Ba（0.6）,Sr（0.4））TiO3 （x=0, 0.05, 0.1, and 0.2） were synthesized from high purity oxide powders by the conventional solid-state synthesis method. X-ray diffraction （XRD） analysis showed the existence of BST as a secondary phase alongside CCTO. Scanning electron microscopy （SEM） investigation showed a slight decrease in grain size of doped CCTO samples. Density measurements showed that porosity content increased with increasing BST addition indicating low densification due to high melting point secondary phase addition. Dielectric constant of undoped CCTO （x=0） showed lack of stability with frequency which dropped drastically between 104 and 105Hz and accompanied by high dielectric loss. Addition of BST into CCTO caused the dielectric constant to slightly decrease but improved stability with frequency compared to the undoped sample. The decrease in dielectric constant of doped CCTO samples was suggested to be partly due to the decrease in average grain size and increase in porosity with BST addition. Nevertheless, a high value of dielectric constant was still maintained around ～104 range for all doped samples. The dielectric loss （tanδ） of all BST-doped samples was lower than that of pure CCTO sample at the frequency range of 103 to 105 Hz probably due to the increase of grains boundary resistivity. The activation energy of grains boundary （E（gb）） showed higher values as compared to the activation energy of grains （Eg ） for all samples and conforms to the internal barrier layer capacitor （IBLC） model.