为研究辐照过程中施加背栅偏置对不同沟道长度部分耗尽绝缘体上硅金属氧化物半导体场效应晶体管(Partily Depleted Silicon-On-Insulator Metal Oxide Semiconductor Field Effect Transistors,PD SOI MOSFETs)电参数影响规律,及对隐埋...为研究辐照过程中施加背栅偏置对不同沟道长度部分耗尽绝缘体上硅金属氧化物半导体场效应晶体管(Partily Depleted Silicon-On-Insulator Metal Oxide Semiconductor Field Effect Transistors,PD SOI MOSFETs)电参数影响规律,及对隐埋氧化层(Buried Oxide,BOX)辐射感生陷阱电荷的调控规律及机理。基于晶体管转移特性曲线,通过提取辐射诱导晶体管阈值电压变化量,对比了不同沟道长度PD SOI在不同背栅偏置条件下的辐射损伤数据,试验结果显示:辐照过程中施加背栅偏置可以显著增强长沟晶体管的损伤。通过提取辐射在BOX层中引入陷阱电荷密度,结合TCAD(Technology Computer Aided Design)器件模拟仿真进行了机理研究,研究结果表明:短沟道晶体管在施加背栅偏置时会受到源漏电压的影响,从而使BOX层中电场分布及强度不同于长沟道晶体管,而长沟道晶体管受源漏电压的影响可以忽略。展开更多
A double silicon on insulator（DSOI） structure was introduced based on fully depleted SOI（FDSOI）technology.The circuit performance could be adjusted dynamically through the separate back gate electrodes applied to ...A double silicon on insulator（DSOI） structure was introduced based on fully depleted SOI（FDSOI）technology.The circuit performance could be adjusted dynamically through the separate back gate electrodes applied to N-channel and P-channel devices.Based on DSOI ring oscillator（OSC）,this paper focused on the theoretical analysis and electrical test of how the OSC＇s frequency being influenced by the back gate electrodes（soi2n,soi2p）.The testing results showed that the frequency and power consumption of OSC could change nearly linearly along with the back gate bias.According to the different requirements of the circuit designers,the circuit performance could be improved by positive soi2 n and negative soi2 p,and the power consumption could be reduced by negative soi2n and positive soi2p.The best compromise between performance and power consumption of the circuit could be achieved by appropriate back gate biasing.展开更多
文摘A double silicon on insulator（DSOI） structure was introduced based on fully depleted SOI（FDSOI）technology.The circuit performance could be adjusted dynamically through the separate back gate electrodes applied to N-channel and P-channel devices.Based on DSOI ring oscillator（OSC）,this paper focused on the theoretical analysis and electrical test of how the OSC＇s frequency being influenced by the back gate electrodes（soi2n,soi2p）.The testing results showed that the frequency and power consumption of OSC could change nearly linearly along with the back gate bias.According to the different requirements of the circuit designers,the circuit performance could be improved by positive soi2 n and negative soi2 p,and the power consumption could be reduced by negative soi2n and positive soi2p.The best compromise between performance and power consumption of the circuit could be achieved by appropriate back gate biasing.
