A uniform doping ultra-thin silicon-on-insulator（SOI） lateral-double-diffused metal-oxide-semiconductor（LDMOS）with low specific on-resistance（R_on,sp） and high breakdown voltage（BV） is proposed and its mechani...A uniform doping ultra-thin silicon-on-insulator（SOI） lateral-double-diffused metal-oxide-semiconductor（LDMOS）with low specific on-resistance（R_on,sp） and high breakdown voltage（BV） is proposed and its mechanism is investigated.The proposed LDMOS features an accumulation-mode extended gate（AG） and back-side etching（BE）. The extended gate consists of a P– region and two diodes in series. In the on-state with VGD〉 0, an electron accumulation layer is formed along the drift region surface under the AG. It provides an ultra-low resistance current path along the whole drift region surface and thus the novel device obtains a low temperature distribution. The R_on,sp is nearly independent of the doping concentration of the drift region. In the off-state, the AG not only modulates the surface electric field distribution and improves the BV, but also brings in a charge compensation effect to further reduce the R_on,sp. Moreover, the BE avoids vertical premature breakdown to obtain high BV and allows a uniform doping in the drift region, which avoids the variable lateral doping（VLD） and the ＂hot-spot＂ caused by the VLD. Compared with the VLD SOI LDMOS, the proposed device simultaneously reduces the R_on,sp by 70.2% and increases the BV from 776 V to 818 V.展开更多
The dynamic thermal process during double-sided asymmetrical TIG backing welding of large thick plates （ 1 000 mm×700 mm×50 mm） is numerically simulated using MSC. MARC. The effect of arc distance on the t...The dynamic thermal process during double-sided asymmetrical TIG backing welding of large thick plates （ 1 000 mm×700 mm×50 mm） is numerically simulated using MSC. MARC. The effect of arc distance on the thermal cycle in weld zone during double-sided asymmetrical T1G backing welding is investigated. The results show that the workpiece experiences double-peak thermal cycle in double-sided asymmetrical TIG backing welding. On the one hand, the fore arc has the pre- heating effect on the rear pass, and the pre-heating temperature depends on the distance between the double arcs, the heat input of fore arc, and the initial temperature of workpiece. On the other hand, the rear arc has the post-heating effect on the fore pass. The mutual effects of two heat sources decrease with the increase of arc distance.展开更多
利用大型有限元分析软件ANSYS分析了国际热核实验反应堆(ITER)Side校正场线圈(CC)端部三维大圆弧模压成形及释放模具后导体的回弹效应,研究了不同半径成形时导体内外表面的应力、应变的分布及释放模具后导体的回弹规律。设计了1套模压...利用大型有限元分析软件ANSYS分析了国际热核实验反应堆(ITER)Side校正场线圈(CC)端部三维大圆弧模压成形及释放模具后导体的回弹效应,研究了不同半径成形时导体内外表面的应力、应变的分布及释放模具后导体的回弹规律。设计了1套模压成形模具,通过修模的方式在该套成形模具上进行了不同半径成形试验,测得了不同成形半径时模压成形后的回弹量值。试验结果验证了所建立的有限元分析模型的正确性。有限元分析和试验结果表明:ITERSideCC端部三维大圆弧可通过模压成形达到所需的大半径要求,为ITER Side CC端部三维大圆弧成形提供了一种可行方案。展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61176069 and 61376079)
文摘A uniform doping ultra-thin silicon-on-insulator（SOI） lateral-double-diffused metal-oxide-semiconductor（LDMOS）with low specific on-resistance（R_on,sp） and high breakdown voltage（BV） is proposed and its mechanism is investigated.The proposed LDMOS features an accumulation-mode extended gate（AG） and back-side etching（BE）. The extended gate consists of a P– region and two diodes in series. In the on-state with VGD〉 0, an electron accumulation layer is formed along the drift region surface under the AG. It provides an ultra-low resistance current path along the whole drift region surface and thus the novel device obtains a low temperature distribution. The R_on,sp is nearly independent of the doping concentration of the drift region. In the off-state, the AG not only modulates the surface electric field distribution and improves the BV, but also brings in a charge compensation effect to further reduce the R_on,sp. Moreover, the BE avoids vertical premature breakdown to obtain high BV and allows a uniform doping in the drift region, which avoids the variable lateral doping（VLD） and the ＂hot-spot＂ caused by the VLD. Compared with the VLD SOI LDMOS, the proposed device simultaneously reduces the R_on,sp by 70.2% and increases the BV from 776 V to 818 V.
文摘The dynamic thermal process during double-sided asymmetrical TIG backing welding of large thick plates （ 1 000 mm×700 mm×50 mm） is numerically simulated using MSC. MARC. The effect of arc distance on the thermal cycle in weld zone during double-sided asymmetrical T1G backing welding is investigated. The results show that the workpiece experiences double-peak thermal cycle in double-sided asymmetrical TIG backing welding. On the one hand, the fore arc has the pre- heating effect on the rear pass, and the pre-heating temperature depends on the distance between the double arcs, the heat input of fore arc, and the initial temperature of workpiece. On the other hand, the rear arc has the post-heating effect on the fore pass. The mutual effects of two heat sources decrease with the increase of arc distance.
文摘利用大型有限元分析软件ANSYS分析了国际热核实验反应堆(ITER)Side校正场线圈(CC)端部三维大圆弧模压成形及释放模具后导体的回弹效应,研究了不同半径成形时导体内外表面的应力、应变的分布及释放模具后导体的回弹规律。设计了1套模压成形模具,通过修模的方式在该套成形模具上进行了不同半径成形试验,测得了不同成形半径时模压成形后的回弹量值。试验结果验证了所建立的有限元分析模型的正确性。有限元分析和试验结果表明:ITERSideCC端部三维大圆弧可通过模压成形达到所需的大半径要求,为ITER Side CC端部三维大圆弧成形提供了一种可行方案。
