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Self-learning fuzzy neural network control for backside width of weld pool in pulsed GTAW with wire filler
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作者 张广军 陈善本 吴林 《中国有色金属学会会刊:英文版》 CSCD 2005年第S2期47-50,共4页
The weld pool shape control by intelligent strategy was studied. In order to improve the ability of self-learning and self-adaptation of the ordinary fuzzy control, a self-learning fuzzy neural network controller (FNN... The weld pool shape control by intelligent strategy was studied. In order to improve the ability of self-learning and self-adaptation of the ordinary fuzzy control, a self-learning fuzzy neural network controller (FNNC) for backside width of weld pool in pulsed gas tungsten arc welding (GTAW) with wire filler was designed. In FNNC, the fuzzy system was expressed by an equivalence neural network, the membership functions and inference rulers were decided through the learning of the neural network. Then, the FNNC control arithmetic was analyzed, simulating experiment was done, and the validating experiments on varied heat sink workpiece and varied gap workpiece were implemented. The maximum error between the real value and the given one was 0.39mm, the mean error was 0.014mm, and the root-mean-square was 0.14mm. The real backside width was maintained around the given value. The results show that the self-learning fuzzy neural network control strategy can achieve a perfect control effect under different set values and conditions, and is suitable for the welding process with the varied structure and coefficients of control model. 展开更多
关键词 fuzzy neural network CONTROL backside WIDTH PULSED GTAW WIRE FILLER intelligent CONTROL
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Hazy Backside Gettering with a-Si: H Film
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作者 王锻强 孙茂友 +2 位作者 翟富义 李美英 尤重远 《Rare Metals》 SCIE EI CAS CSCD 1993年第1期5-8,共4页
Hazy backside gettering of boron-doped <111> siljcon wafer with a-Si: H film deposited by rf glow discharge technique (rf-GD) has been investigated by SEM, optical microscope and preferential etching tech- lique... Hazy backside gettering of boron-doped <111> siljcon wafer with a-Si: H film deposited by rf glow discharge technique (rf-GD) has been investigated by SEM, optical microscope and preferential etching tech- lique. lt is evident that the deposited film can effectively getter the haze after annealing at l l00℃in wet oxy- len ambient for 120 min. The pre-crystallization annealing at 650℃ in argon ambient for 10 min enhances the gettering effectiveness. The low temperature(200~300℃) process of growing extrinsic gettering film reduces the processing contamination. 展开更多
关键词 backside gettering A-SI:H B-doped film
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Neuron self-learning PSD control for backside width of weld pool in pulsed GTAW with wire filler
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作者 张广军 陈善本 吴林 《China Welding》 EI CAS 2003年第2期87-91,共5页
In this paper, the weld pool shape control by intelligent strategy was studied. A neuron self-learning PSD controller for backside width of weld pool in pulsed GTAW with wire filler was designed. The PSD control arith... In this paper, the weld pool shape control by intelligent strategy was studied. A neuron self-learning PSD controller for backside width of weld pool in pulsed GTAW with wire filler was designed. The PSD control arithmetic was analyzed, simulating experiment by MATLAB software was done, and the validating experiments on varied heat sink workpiece and varied gap workpiece were successfully implemented. The study results show that the neuron self-learning PSD control method can attain a perfect control effect under different set values and conditions, and is suitable for the welding process with the varied structure and coefficients of control model. 展开更多
关键词 pulsed GTAW with wire filler backside width control intelligent control neuron self-learning PSD
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Full well capacity and quantum efficiency optimization for small size backside illuminated CMOS image pixels with a new photodiode structure 被引量:4
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作者 孙羽 张平 +2 位作者 徐江涛 高志远 徐超 《Journal of Semiconductors》 EI CAS CSCD 2012年第12期42-48,共7页
To improve the full well capacity (FWC) of a small size backside illuminated (BSI) CMOS image sensor (CIS), the effect of photodiode capacitance (Cpo) on FWC is studied, and a reformed pinned photodiode (PPD... To improve the full well capacity (FWC) of a small size backside illuminated (BSI) CMOS image sensor (CIS), the effect of photodiode capacitance (Cpo) on FWC is studied, and a reformed pinned photodiode (PPD) structure is proposed. Two procedures are implemented for the optimization. The first is to form a varying doping concentration and depth stretched new N region, which is implemented by an additional higher-energy and lower-dose N type implant beneath the original N region. The FWC of this structure is increased by extending the side wall junctions in the substrate. Secondly, in order to help the enlarged well capacity achieve full depletion, two step P-type implants with different implant energies are introduced to form a P-type insertion region in the interior of the stretched N region. This vertical inserted P region guarantees that the proposed new PD structure achieves full depletion in the reset period. The simulation results show that the FWC can be improved from 1289e- to 6390e-, and this improvement does not sacrifice any image lag performance. Additionally, quantum efficiency (QE) is enhanced in the full wavelength range, especially 6.3% at 520 nm wavelength. This technique can not only be used in such BSI structures, but also adopted in an FSI pixel with any photodiode-type readout scheme. 展开更多
关键词 backside illuminated CMOS image sensor PHOTODIODE full well capacity quantum efficiency small size pixel
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SEE characteristics of small feature size devices by using laser backside testing 被引量:1
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作者 封国强 上官士鹏 +1 位作者 马英起 韩建伟 《Journal of Semiconductors》 EI CAS CSCD 2012年第1期72-76,共5页
This paper presents single event upset (SEU) and single event latch-up (SEL) characteristics of small feature size devices by laser backside testing method, which is dedicated to dealing with the increasing metal ... This paper presents single event upset (SEU) and single event latch-up (SEL) characteristics of small feature size devices by laser backside testing method, which is dedicated to dealing with the increasing metal layers on the front side of integrated circuits. The influence of test data pattern on SEU threshold and cross-section is investigated. The supply current state of micro latch-up for deep sub-micron SRAM is described. The laser energy thresholds were correlated to heavy ion thresholds LET to determine an empirical relationship between laser energy threshold and heavy ion LET. This empirical relationship was used to estimate the equivalent laser LETs for devices fabricated in small feature sizes. Moreover, the SEU of a Power PC CPU fabricated with 90 nm SOI CMOS process has been tested, which indicates that the laser backside method could be used to evaluate SOl small feature size devices. 展开更多
关键词 SEU SEL LASER backside
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GaN-based high-voltage light-emitting diodes with backside reflector 被引量:1
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作者 黄华茂 王洪 +1 位作者 黄晓升 胡金勇 《Journal of Semiconductors》 EI CAS CSCD 2014年第7期97-101,共5页
High-voltage light-emitting diodes (HV-LED) with backside reflector, including Ti305/SiO2 distributed Bragg reflector (DBR) or hybrid reflector combining DBR and Al or Ag metal layer, are investigated using Monte ... High-voltage light-emitting diodes (HV-LED) with backside reflector, including Ti305/SiO2 distributed Bragg reflector (DBR) or hybrid reflector combining DBR and Al or Ag metal layer, are investigated using Monte Carlo ray tracing method. The hybrid reflector leads to more enhancement of light-extraction efficiency (LEE). Moreover, the LEE can also be improved by redesigning the thicknesses of DBR. HV-LED with four redesigned DBR pairs (4-MDBR), and those with a hybrid reflector combining 4-MDBR and Al metal layer (4-MDBR-Al), are fabricated. Compared to 4-MDBR, the enhancement of light-output power induced by 4-MDBR-A1 is 4.6%, which is consistent with the simulated value of 4.9%. 展开更多
关键词 high-voltage light-emitting diodes hybrid backside reflector distributed Bragg reflector metal re-flector light extraction efficiency
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跟踪控制状态飞行员建模研究 被引量:5
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作者 胡恩勇 袁锁中 杨一栋 《飞行力学》 CSCD 北大核心 2008年第4期11-13,18,共4页
在跟踪飞行状态时,飞行员是按被跟踪状态量的速率信息和跟踪误差信息以一定的控制规律进行操纵的。研究了飞行员在跟踪控制状态时操纵模型的建立方法,即如何建立飞行员的控制规律。以光学助降人工着舰时飞行员下滑"m eatball"... 在跟踪飞行状态时,飞行员是按被跟踪状态量的速率信息和跟踪误差信息以一定的控制规律进行操纵的。研究了飞行员在跟踪控制状态时操纵模型的建立方法,即如何建立飞行员的控制规律。以光学助降人工着舰时飞行员下滑"m eatball"对中跟踪操纵为例,采用海军惯用的"backside"技术设计了飞行员控制规律的操纵增益参数,并辅以仿真验证。结果表明,跟踪控制状态飞行员建模的简化方法具有普遍意义。 展开更多
关键词 飞行员模型 跟踪控制 backside技术 下滑校正
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On the Design of Planar Printed Dipole Array Antennas
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作者 Jean-Marie Floc’h Ahmad El Sayed Ahmad +3 位作者 Anne Claude Tarot Renaud Loison Sophia Thizon JeanYves Daden 《Wireless Engineering and Technology》 2012年第4期203-209,共7页
In this paper, we propose a new design procedure for printed dipole array antennas. Applications of these arrays are devoted to wireless communication systems, mainly base stations and beam steerable antennas. All the... In this paper, we propose a new design procedure for printed dipole array antennas. Applications of these arrays are devoted to wireless communication systems, mainly base stations and beam steerable antennas. All the designs have been developed at the frequency of 3 GHz. This structure is chosen in order to enhance the gain and minimize the backside radiations of an antenna array with a very simple feeding. 展开更多
关键词 PRINTED ANTENNA Array QUASI Yagi ANTENNAS GAIN and backside Radiation Enhancement Simple Microstripfeeding
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