X-Band Power Amplifier for Next Generation Networks Based on MESFET

Advanced wireless standards of communication like 3GPP and LTE are becoming more and more efficient and with this evolution of communication systems mobile equipment is also become smaller and smaller. Power amplifier designing has become a very crucial task in this era where efficiency and size are the main concern of any designer. In this paper we have design and analyzed X-band Class E Metal-semiconductor field effect transistor(MESFET) based Power Amplifier. This device targets the devices which use OFDM technique to improve their spectral efficiency for the next generation communication systems. Microstrip lines are used to achieve small size for our design instead of lumped components. Load Pull measurements are used to get MESFET input and output impedances optimum values. For linear and non linear operation small signal mathematical model of the design is used. To reduce thermal losses FR4 substrate is used to increase PA efficiency. Our designs shows small values of input and output return loss of about-22.3d B and-23.716 d B achieving a high gain of about25.6 d B respectively, with PAE of about 30 % having stability factor greater than 1 and 21.894 d Bm of output power.

X-band inverse class-F GaN internally-matched power amplifier

An X-band inverse class-F power amplifier is realized by a 1-mm Al Ga N/Ga N high electron mobility transistor（HEMT）.The intrinsic and parasitic components inside the transistor,especially output capacitor Cds,influence the harmonic impedance heavily at the X-band,so compensation design is used for meeting the harmonic condition of inverse class-F on the current source plane.Experiment results show that,in the continuous-wave mode,the power amplifier achieves 61.7% power added efficiency（PAE）,which is 16.3% higher than the class-AB power amplifier realized by the same kind of HEMT.To the best of our knowledge,this is the first inverse class-F Ga N internally-matched power amplifier,and the PAE is quite high at the X-band.

A 16.9 dBm InP DHBT W-band power amplifier with more than 20 dB gain

A two-stage MMIC power amplifier has been realized by use of a l-μm InP double heterojunction bipolar transistor（DHBT）.The cascode structure,low-loss matching networks,and low-parasite cell units enhance the power gain.The optimum load impedance is determined from load-pull simulation.A coplanar waveguide transmission line is adopted for its ease of fabrication.The chip size is 1.5×1.7 mm^2 with the emitter area of 16×1μm×15μm in the output stage.Measurements show that small signal gain is more than 20 dB over 75.5-84.5 GHz and the saturated power is 16.9 dBm @ 79 GHz with gain of 15.2 dB.The high power gain makes it very suitable for medium power amplification.

NONLINEAR CHARACTERIZATION OF CONCURRENT DUAL-BAND RF POWER AMPLIFIERS

In this paper, the synchronous concurrent dual-band RF signal is used to drive the RF Power Amplifier (PA). The nonlinear characterization of a concurrent dual-band RF PA is discussed while two band signals in the dual-band are modulated by CDMA2000 and WCDMA signals. When the two band signals in the dual-band of the PA are modulated with the same signals, it is found that the nonlinearity of the PA can be expressed by any of the two corresponding baseband data. On the other hand, when the two band signals in the dual-band of the PA are modulated with two different signals, the PA nonlinearity cannot be characterized by any of the two corresponding baseband data. In this case, its nonlinearity has to be denoted by a composite signals consisting of the two baseband signals. Consequently, the requirements for the speed of the A/D converter can be largely reduced. The experimental results with CDMA2000 and WCDMA signals demonstrate the speed of the A/D converter required is only 30 M Sample Per Second (SaPS), but it will be at least 70 M SaPS for the conventional method.

An S-band solid-state radio frequency power amplifier used at Shanghai soft X-ray FEL facility

In this paper,we present the general design methods and parameter measurements of a 1-k W solidstate radio frequency(RF) power amplifier at 2856 MHz,for the soft X-ray free electron laser facility.Three-stage amplification with a 4-way combination is used.An RF switch module is integrated with the solid-state RF power amplifier to convert the continuous wave(CW) signal into pulse signal,with adjustable pulse width.The power gain is measured at 57.7 d B at 60 d Bm output.The RF phase noise,which is measured by the low-level RF system,is\0.015 degree(RMS),while the pulse frontier jitter is\5 ns.

Multi-mode multi-band power amplifier module with high low-power efficiency

Increasingly, mobile communications standards require high power efficiency and low currents in the low power mode. This paper proposes a fully-integrated multi-mode and multi-band power amplifier module （PAM） to meet these requirements. A dual-path PAM is designed for high-power mode （HPM）, medium-power mode （MPM）, and low-power mode （LPM） operations without any series switches for different mode selection. Good performance and significant current saving can be achieved by using an optimized load impedance design for each power mode. The PAM is tapeout with the InGaP/GaAs heterojunction bipolar transistor （HBT） process and the 0.18-μm complementary metal-oxide semiconductor （CMOS） process. The test results show that the PAM achieves a very low quiescent current of 3 mA in LPM. Meanwhile, across the 1.7-2.0 GHz frequency, the PAM performs well. In HPM, the output power is 28 dBm with at least 39.4% PAE and 240 dBc adjacent channel leakage ratio 1 （ACLR1）. In MPM, the output power is 17 dBm, with at least 21.3% PAE and -43 dBc ACLR1. In LPM, the output power is 8 dBm, with at least 18.2% PAE and -40 dBc ACLR1.

Effects of Band Therapy Using Music on Grasping Power, Depression, and Personal Relationships in Nursing-Home-Dwelling Elderly Individuals

The current study examined the effects of band therapy using music on grasping power, depression, and personal relationships among residents of a nursing home. Thirty subjects participated in the study. The band therapy included greetings, warm-up exercises with music, singing with dance, playing instruments, closing speech, and stretching with background music. Band therapy was held for 40 minutes once per week, for a total of four sessions, in the activity room of the nursing home. Findings showed that grasping power, depression, and personal relationships were improved at posttest, but the differences were not statistically significant. A better study design to compare the effects of band therapy with the other group, and a more simple and repeated intervention for the elderly to follow without stress might be necessary.

A High Efficiency Doherty Power Amplifier for TV Band Applications

This paper presents a high efficiency Doherty power amplifier suitable for TV band applications. A class AB power amplifier is firstly implemented using a commercial GaN HEMT from Cree Incorporation, achieving a high power-added-efficiency of 77.78% and a 40.593 dBm output power with an associated gain of 21.65 dB. The Doherty amplifier has then been designed following the previous class AB scheme for the main amplifier and a class C scheme for the peak one. This amplifier attained a high power-added-efficiency of 81.94%, a 42.77 dBm output power, an associated gain of 21.32 dB, and an operating frequency bandwidth between 550 and 1000 MHz (58.06% fractional bandwidth) which made it suitable for TV band applications.

Analysis of Light Load Efficiency Characteristics of a Dual Active Bridge Converter Using Wide Band-Gap Devices

In this paper, the zero voltage switching (ZVS) region of a dual active bridge (DAB) converter with wide band-gap (WBG) power semiconductor device is analyzed. The ZVS region of a DAB converter varies depending on output power and voltage ratio. The DAB converters operate with hard switching at light loads, it is difficult to achieve high efficiency. Fortunately, WBG power semiconductor devices have excellent hard switching characteristics and can increase efficiency compared to silicon (Si) devices. In particular, WBG devices can achieve ZVS at low load currents due to their low parasitic output capacitance (Co,tr) characteristics. Therefore, in this paper, the ZVS operating resion is analyzed based on the characteristics of Si, silicon carbide (SiC) and gallium nitride (GaN). Power semiconductor devices. WBG devices with low Co,tr operate at ZVS at lower load currents compared to Si devices. To verify this, experiments are conducted and the results are analyzed using a 3 kW DAB converter. For Si devices, ZVS is achieved above 1.4 kW. For WBG devices, ZVS is achieved at 700 W. Due to the ZVS conditions depending on the switching device, the DAB converter using Si devices achieves a power conversion efficiency of 91% at 1.1 kW output. On the other hand, in the case of WBG devices, power conversion efficiency of more than 98% is achieved under 11 kW conditions. In conclusion, it is confirmed that the WBG device operates in ZVS at a lower load compared to the Si device, which is advantageous in increasing light load efficiency.

一种L波段300W GaN脉冲功率模块

随着第三代半导体GaN器件技术的不断发展,GaN高电子迁移率晶体管(HEMT)在电子系统中逐步得到了广泛应用。研制了一款小型化L波段300 W GaN脉冲功率模块。研发了满足高压脉冲工作条件的GaN HEMT芯片,采用负载牵引技术进行了器件大信号阻抗参数提取,并以此为基础设计了小型化匹配网络进行阻抗变换。基于高压驱动芯片和开关器件芯片设计了小型化高压脉冲调制电路。测试结果表明,在工作频率990~1130 MHz、工作电压50 V、脉冲宽度100μs、占空比10%下,功率模块脉冲输出功率大于300 W,功率附加效率大于53%,功率增益大于38 dB。功率模块尺寸为30 mm×30 mm×8 mm。

Low-cost FPGA implementation of 2D digital pre-distorter for concurrent dual-band power amplifier

This paper proposes a low-cost hardware architecture based on concurrent dual-band digital pre-distorter （DPD）. The architecture is implemented on field programmable gate array （FPGA） to compensate for the nonlinearity of the concurrent dual-band power amplifier （PA）. This implementation introduces a novel model complexity reduction technique into system, namely, time-division multiplexing for out-of-band lookup tables （LUTs） sharing. Performances are evaluated with an experimental test setup using a wideband class-F PA. The dual-band signal center frequency separated by 80 MHz. Lower and upper center frequency are located at 2.61 GHz and 2.69 GHz, respectively. This novel DPD implementation maintains excellent performance, but uses hardware resources reduced by 29.17% compared with conventional approaches. The results show that the adjacent channel power ratio （ACPR） is less than -59 dBc and normalized mean square error （NMSE） is around - 62dB for lower sideband （LSB） and - 63dB for upper sideband （USB）.

测距仪信号功率谱及邻道泄露功率

为了解决宽带航空数据链频率资源匮乏的问题,L频段数字航空通信系统(L-DACS,L-band digital aeronautical communications system)将以内嵌的方式部署在航空无线电导航L频段测距仪(DME,distance measure equipment)波道间,因此,不可避免产生测距仪信号干扰L-DACS系统接收机的问题。为了定量描述DME/N(distance measure equipment/normal)与DME/P(distance measure equipment/precision)信号带外泄露对LDACS系统接收机的影响,首先建立了DME/N与DME/P信号数学模型,然后理论推导出DME/N与DME/P信号的功率谱密度表达式,以此为基础研究了DME/N与DME/P信号带外泄露对邻道部署的L-DACS系统接收机的影响,最后通过计算机仿真验证了理论分析结果的正确性。研究表明:DME信号带外泄露对L-DACS系统的影响主要表现在第一邻道,DME/P信号在第一邻道内泄露功率比DME/N信号泄露功率高约10 dB。

一种基于NB-IoT的智能井盖监测系统设计

针对城市井盖保有量大、安全事故频发、人工巡检困难、管理组织混乱等问题,提出一种基于窄带物联网(NB-IoT)技术的窨井盖自动监测系统。该系统以STM32作为主控模块,包含倾角、水位等传感器,实现对井盖状态以及井内重点数据的采集,配合云端服务器和客户端完成井盖数据远程可视化显示。结果表明,所提系统可以实现故障井盖自动报警、精确定位,降低人工巡检的难度,让城市井盖管理更加智能化,让故障检修更加便捷化,提高城市管理的智能化水平。

VHF频段小型化千瓦级GaN功率放大器

为了满足VHF频段对高功率放大器小型化的需求,设计并制备了一款基于05μm GaN高电子迁移率晶体管(HEMT)工艺的VHF频段小型化千瓦级功率放大器。通过采用多节微带电容网络和高介电常数的印制电路板(PCB)实现了末级功率放大器匹配电路的小型化;以高通滤波器作为级间匹配电路,在减小电路尺寸的同时,提高了链路增益;采用混合集成工艺,实现了电源调制器、前级驱动功率放大器和末级功率放大器等各单元的小型化高密度集成。测试结果表明,在024~030 GHz频带内,该功率放大器的工作电压为50 V,工作脉宽为100μs,在占空比10%、输入功率10 dBm的工作条件下,带内输出功率大于1000 W,功率附加效率约为60%~69%,功率增益大于50 dB,功放体积为46 mm×30 mm×6 mm。

油气管道VSAT卫星链路计算方法研究

为了解决VSAT卫星链路完全依靠卫星厂家进行计算且无法核对厂家提供的数据是否正确的问题,针对VSAT卫星链路计算的可靠性和健壮性,提出了一种油气管道VSAT卫星链路计算方法。该方法采用“功带平衡”算法,将VSAT卫星链路的带宽占用比等同于功率占用比,计算出卫星转发器最大输出功率,进而计算等效功率密度,根据每载波占用卫星的ERIP值公式,计算出饱和通量密度,匹配出卫星天线尺寸及功放矩阵,根据匹配的卫星天线及功放计算VSAT卫星链路总载噪比,将VSAT卫星链路总载噪比和系统最低载噪比进行对比,VSAT卫星链路总载噪比大者为合适的卫星天线及功放,反之为不合适选项,用推算出的卫星天线及功放推算出功率占用比,功率占用比与带宽占用比差别较大时,需调整卫星天线及功放的选择,计算功率占用比,直到卫星天线及功放达到功率占用比等于带宽占用比,即为最优的卫星天线和功放。通过最终的计算可得出卫星天线与功放的匹配矩阵,在实际工程中需从中选取合适的卫星天线与功放中的最小值达到最经济、可靠的匹配。该计算方法通过软件编程进行了界面可视化显示,并在诸多工程中进行了详细验证,结果表明此方法准确可靠,很好地提升了VSAT卫星链路计算的可靠性和健壮性。

双有源桥无回流功率控制的死区影响与补偿

针对三重移相协同控制(CTPS)加入桥臂死区后,会导致双有源桥(DAB)变换器回流功率发生及软开关失效的问题,提出针对CTPS控制的死区补偿策略.通过分析CTPS控制不同模式下桥臂死区引起的变压器原副边电压及漏感电流的变化,基于回流功率产生的原理,更正了不同模式移相比之间的耦合关系,对功率传输模型及CTPS控制模式的切换条件进行修正,实现了死区对CTPS控制影响的有效控制.利用所提的补偿方案,抑制了由死区引起的回流功率,恢复了CTPS控制的软开关性能,具有较补偿前更优的电流应力.分别开展死区补偿前、后的实验,对死区影响的分析和所提出的补偿策略进行验证.

基于敏感频段识别的高风电渗透率电力系统频率特性研究

针对风电功率波动性显著的问题,展开了基于敏感频段识别的高风电渗透率电力系统频率特性的研究。分析了单机电力系统在有功功率扰动下的频率响应特性,构建了包含风电的多机电力系统PSASP暂态仿真模型,介绍了多机电力系统敏感频段的识别方法。通过仿真分析,探讨了敏感频段下风功率波动对多机电力系统频率特性的影响。研究结果表明,多机电力系统中确实存在敏感频段,并且随着风电渗透率的不断提升,系统的调频能力和抵御风功率波动的能力会逐渐减弱。该研究成果为更全面地评估风电系统的敏感频段特性提供了依据,同时也为提升风电功率预测精度提供了技术参考。

激光功率对205B铝合金激光-CMT复合增材组织及性能的影响

目的针对传统增材技术造成的205B铝合金组织均匀性差、气孔率高、强度低等问题,选用激光-电弧(CMT)复合增材技术为研究方法,探究激光功率对其组织均匀性和性能的影响规律。方法采用激光-电弧(CMT)复合增材技术实现了205B铝合金增材成形件的良好成形,并利用现代分析技术对材料的宏微观组织形貌、第二相分布、气孔、物相组成、显微硬度及拉伸强度进行表征。结果成形件中部区域呈现“凹弧形”层状结构特征且存在一定程度的组织不均匀性和各类气孔。激光功率对材料层间和层内宏微观组织及第二相分布有显著影响,当激光功率增加至1800W及以上时,层间“细晶带”特征明显且柱状晶组织逐渐消失。当激光功率为1600 W时,材料获得了最低的气孔率(0.85%),平均气孔直径为25.58μm,平均气孔数量为32。材料具有典型的拉伸强度各向异性,当激光功率为1600 W时,材料的横向拉伸强度和纵向拉伸强度均获得最大值,分别为265.65MP和235.75MPa。结论通过调节激光功率能够在一定程度上解决材料组织不均匀的问题并减小气孔率,从而提高了成形件的力学性能。

基于多频磁负超材料的心脏起搏器无线供能研究

针对植入式心脏起搏器无线供能系统频率变化发生共振失调导致传输效率低等问题,该文提出一种基于多频磁负超材料(MB-MNG)的心脏起搏器无线供能系统。首先,根据磁负超材料等效介质理论,推导了正八边形超材料设计的基本公式,建立了MB-MNG基元模型;其次,以S-S结构为例,通过仿真和实验研究了6.78 MHz、8.94 MHz和13.56 MHz频段下系统传输效率;再次,为了研究可靠性,讨论了系统与MB-MNG之间的错位情况;最后,为确保安全性,使用多物理场仿真软件研究系统的电磁安全特性,并进行温升实验。实验结果表明:在三工作频段下,基于MB-MNG的WPT系统的输出功率为3.29W、2.77W和2.87W,与传统WPT系统和加入铁氧体薄板WPT系统对比,传输效率提高了24.6%~36.5%。同时,在系统发生偏移时,仍能保持30.73%~48.41%的传输效率;60 min充电测试内组织SAR值及最大温升均符合安全标准。

一种用于反无人机设备的三频段功率放大器

在现有双频匹配理论的基础上,设计了一种可同时工作在1.5/2.4/5.8 GHz三个频段的射频功率放大器。为满足对抗无人机的实际应用需求,首先匹配2.4 GHz和5.8 GHz两个频率,然后匹配1.5 GHz,并设计相应的三频段输入输出匹配网络,完成了三频段功率放大器整体电路的设计。ADS仿真结果表明,当输入功率为28 dBm时,在三个频段设计的射频功率放大器的输出功率分别为39.88 dBm、40.94 dBm和39.25 dBm,效率分别达到了46.52%、60.54%和39.40%。该功率放大器可应用在基于信号抑制或信号欺骗的反制无人机设备中,提升放大器效率与设备集成度。