Effects of second phases on mechanical properties and martensitic transformations of ECAPed TiNi and Ti-Mo based shape memory alloys

TiNi and Ti-based shape memory alloys were processed by equal channel angular pressing （ECAP） at 673-773 K along Bc route to obtain ultrafine grains for increasing the strength of parent phase and improving the functional properties. The effects of both thermodynamically stable and metastable second phases on the mechanical properties and martensitic transformations of these alloys were investigated. It is found that thermodynamically stable Ti2Ni phase has no effect on martensitic transformation and superelasticity of Ti-rich TiNi alloy, thermodynamically stable α phase is harmful for ductility of Ti-Mo-Nb-V-Al alloy, but metastable Ti3Ni4 phase is effective for R phase transformation, martensitic transformation and superelasticity of Ni-rich TiNi alloy. The mechanisms of the second phases on the martensitic transformations and mechanical properties were discussed.

Martensitic Transformation in Fe-Mn-Si Based Shape Memory Alloys

The critical driving force for martensitic transformation fcc ( gamma ) yields hcp ( epsilon ) in ternary Fe-Mn-Si alloys increases with the content of Mn and decreases with that of Si. Thermodynamical prediction of M//s in ternary Fe-Mn-Si alloys was established. The fcc ( gamma ) yields hcp ( epsilon ) martensitic transformation in Fe-Mn-Si is a semi-thermoelastic and the nucleation process does not strongly depend on soft mode. Nucleation occurs directly through an overlapping of stacking fault rather than pole mechanism, and it is suggested that stacking fault energy (SFE) is the main factor controlling nucleation. Based on the phenomenological theory of martensite crystallography, a shuffle on (0001)//h//c//p plane is required when d//1//1//1 does not equal d//0//0//0//2. The derived principal strain in Bain distortion is smaller, i, e., more reasonable than the values given by Christian. Alloying elements strengthening the austenite, lowering SFE of gamma phase and reducing T//N** gamma temperature may be beneficial to shape memory effect of Fe-Mn-Si based alloys. Accordingly, Fe-Mn-Si-RE and Fe-Mn-Si-Cr-N (or Fe-Mn-Si-Ni-Cr-N) are worthy to be recommended as shape memory materials with improved shape memory effect. (Edited author abstract) 48 Refs.

THE KAKEYA MAXIMAL OPERATOR WITH A SPECIAL BASE to the memory of Professor Ruilin Long

Let M f be the Kakeya maximal function in d-dimensional Euclidean space, with same base consisting of cylinders of eccentricity N. The inequality shoum for a base satisfying a direction condition, where ?and c are constants depending only on d.

Impact of Band-Engineering to Performance of High-k Multilayer Based Charge Trapping Memory

Impact of band-engineering to the performance of charge trapping memory with HfO2/Ta2O5/HfO2 （HTH） as the charge trapping layer is investigated. Compared with devices with the same total HfO2 thickness, structures with Ta2O5 closer to substrates show larger program/erase window, because the 2nd HfO2 （next to blocking oxide） serving as part of blocking oxide reduces the current tunneling out of/in the charge trapping layer during program and erase. Moreover, trapped charge centroid is modulated and contributed more to the fiat-band voltage shift. Further experiments prove that devices with a thicker 2nd HfO2 layer exhibit larger saturate fiat-band shift in both program and erase operation. The optimized device achieves a 7 V memory window and good reliability characteristics.

Memory Behaviors Based on ITO/Graphene Oxide/Al Structure

We investigate the memory properties of the ITO/graphene oxide/Al diodes. It is found that the devices show different memory behaviors with the diverse geometry and thickness of Al. When the thickness of the Al electrode is relatively thick, the device of the cross-point Al electrode shows a three-level memory effect, and the counterpart device of the cross-bar Al electrode exhibits a volatile static random access memory effect. When the thickness of the AI electrode is thinner, the above devices demonstrate a flash memory effect. The different memory behaviors of ITO/GO/AI diodes are ascribed to the mode and degree of reduction and oxidation of GO.

Data-driven unsupervised anomaly detection and recovery of unmanned aerial vehicle flight data based on spatiotemporal correlation

Anomaly detection is crucial to the flight safety and maintenance of unmanned aerial vehicles(UAVs)and has attracted extensive attention from scholars.Knowledge-based approaches rely on prior knowledge,while model-based approaches are challenging for constructing accurate and complex physical models of unmanned aerial systems(UASs).Although data-driven methods do not require extensive prior knowledge and accurate physical UAS models,they often lack parameter selection and are limited by the cost of labeling anomalous data.Furthermore,flight data with random noise pose a significant challenge for anomaly detection.This work proposes a spatiotemporal correlation based on long short-term memory and autoencoder(STCLSTM-AE)neural network data-driven method for unsupervised anomaly detection and recovery of UAV flight data.First,UAV flight data are preprocessed by combining the Savitzky-Golay filter data processing technique to mitigate the effect of noise in the original historical flight data on the model.Correlation-based feature subset selection is subsequently performed to reduce the reliance on expert knowledge.Then,the extracted features are used as the input of the designed LSTM-AE model to achieve the anomaly detection and recovery of UAV flight data in an unsupervised manner.Finally,the method's effectiveness is validated on real UAV flight data.

Uncertainty relations based on skew information with quantum memory

Uncertainty principle is one of the most fascinating features of the quantum world. It asserts a fundamental limit on the precision with which certain pairs of physical properties of a particle, such as position and momentum, can not be si- multaneously known. The uncertainty principle has attracted considerable attention since the innovation of quantum me- chanics and has been investigated in terms of various types of uncertainty inequalities： in terms of the noise and dis- turbance, according to successive measurements, as informa- tional recourses in entropic terms, by means of majorization technique and based on sum of variances and standard devia- tions.