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One-step synthesis of basic magnesium sulfate whiskers by atmospheric pressure reflux 被引量:8
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作者 Xinlong Ma Guoqing Ning +1 位作者 Chuanlei Qi Jinsen Gao 《Particuology》 SCIE EI CAS CSCD 2016年第1期191-196,共6页
We have developed a one-step process for the synthesis of basic magnesium sulfate (5Mg(OH)2-MgSO4-3H20, abbreviated as 513MOS) whiskers from MgSO4,7H20 and MgO by refluxing at atmospheric pressure. The process sho... We have developed a one-step process for the synthesis of basic magnesium sulfate (5Mg(OH)2-MgSO4-3H20, abbreviated as 513MOS) whiskers from MgSO4,7H20 and MgO by refluxing at atmospheric pressure. The process shows potential for the low-cost mass production of controlled- structure whiskers. Their 0.3-1.0 μm diameter and 40-80 μm length correspond to an aspect ratio of 40-260. The 513MOS whisker morphology is related closely to MgSO4 concentration and reflux time. The optimized MgSO4 concentration is 1.2-1.5 mol/L with a 25-30 h reflux time. X-ray diffractometry revealed that the b-axis is the predominant growth direction of the whiskers. Their growth mechanism is by the relatively slow liquid-phase deposition of Mg2+, OH-, and SO42-. The long reaction time and high MgSO4 concentration are conducive to the formation of 513MOS whiskers under gentle reaction conditions. Porous MgO whiskers with a fibrous structure were obtained after calcination of the 513MOS whiskers at 1020 ℃. 展开更多
关键词 basic magnesium sulfate whiskers atmospheric pressure reflux growth mechanism
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NH4^+-NH 3缓冲体系制备碱式硫酸镁晶须及生长机理 被引量:2
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作者 范天博 韩冬雪 +6 位作者 贾晓辉 陈思 姜宇 胡婷婷 郭洪范 李莉 刘云义 《人工晶体学报》 EI CAS 北大核心 2020年第9期1721-1727,共7页
碱式硫酸镁晶须的分子式为x MgSO 4·y Mg(OH)2·z H 2 O,是一种人工合成具有一定长径比的无机功能材料。作为填充剂,可提高材料的抗拉强度等机械性能,也可以起到阻燃的作用。在NH 4+-NH 3缓冲体系,用常压一步法制备长度为10~30... 碱式硫酸镁晶须的分子式为x MgSO 4·y Mg(OH)2·z H 2 O,是一种人工合成具有一定长径比的无机功能材料。作为填充剂,可提高材料的抗拉强度等机械性能,也可以起到阻燃的作用。在NH 4+-NH 3缓冲体系,用常压一步法制备长度为10~30μm,直径为0.05~0.3μm,长径比为30~150的MgSO 4·5Mg(OH)2·3H 2 O晶须。采用XRD、SEM、TG、TEM对产品进行表征,结合表征结果对反应浓度、反应温度、反应时间和陈化时间等影响因素进行研究。对碱式硫酸镁的生成机理进行第一性原理分析,碱式硫酸镁晶须生长习性符合位错螺旋生长机制。采用缓冲体系稳定溶液酸碱性,降低反应溶液的非理想性,可以使晶体在非受迫情况下定向生长,为进一步工业应用,实现低能耗生产碱式硫酸镁晶须提供了重要参考。 展开更多
关键词 碱式硫酸镁 晶须 常压一步法 缓冲体系 生长机理 第一性原理
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