We report the performance of the first self-aligned InP/InGaAs double heterojunction bipolar transistor （DHBT） produced in China. The device has a 2μm × 12μm U-shaped emitter area and demonstrates a peak comm...We report the performance of the first self-aligned InP/InGaAs double heterojunction bipolar transistor （DHBT） produced in China. The device has a 2μm × 12μm U-shaped emitter area and demonstrates a peak common-emitter DC current gain of over 300,an offset voltage of 0. 16V,a knee voltage of 0.6V,and an open-base breakdown voltage of about 6V. The HBT exhibits good microwave performance with a current gain cutoff fre- quency of 80GHz and a maximum oscillation frequency of 40GHz. These results indicate that this InP/InGaAs DHBT is suitable for low-voltage, low-power, and high-frequency applications.展开更多
文摘We report the performance of the first self-aligned InP/InGaAs double heterojunction bipolar transistor （DHBT） produced in China. The device has a 2μm × 12μm U-shaped emitter area and demonstrates a peak common-emitter DC current gain of over 300,an offset voltage of 0. 16V,a knee voltage of 0.6V,and an open-base breakdown voltage of about 6V. The HBT exhibits good microwave performance with a current gain cutoff fre- quency of 80GHz and a maximum oscillation frequency of 40GHz. These results indicate that this InP/InGaAs DHBT is suitable for low-voltage, low-power, and high-frequency applications.
